Abstract: A displaying apparatus in which a plurality of pixels each including an organic light emitting element are arrayed in a pixel region, comprising a plurality of lower electrodes arrayed on a substrate in correspondence with the plurality of pixels, a first insulating layer covering an upper surface of the substrate and at least side surfaces of the plurality of lower electrodes, an organic compound layer provided all over the pixel region to cover the plurality of lower electrodes and the first insulating layer, an upper electrode provided all over the pixel region to cover the organic compound layer, and an interpixel electrode provided between the plurality of lower electrodes to be arranged along a boundary of the plurality of pixels under the organic compound layer and above the first insulating layer.

Abstract: Provided is an organic light emitting device having high emission efficiency and a long continuous driving lifetime. The organic light emitting device includes: an anode; a cathode; and an emitting layer placed between the anode and the cathode, in which: the emitting layer contains an emitting material that emits fluorescence; and in an emission wavelength region of the emitting material, an absorption peak of an absorption spectrum in a minimum excited triplet state of a material having a smallest minimum excited triplet energy out of constituent materials in the emitting layer is absent.

Abstract: One embodiment of this invention has a first electrode, a first light emitting layer, and a second electrode, in which the first light emitting layer has a first host material and a first dopant material, a lowest triplet excitation energy of the first host material is higher than a lowest triplet excitation energy of the first dopant material, and, when a weight of the first light emitting layer is set to 100 wt %, a concentration of the first dopant material is 0.3 wt % or less.

Abstract: A switching element control device for controlling a switching element incorporating a reverse conducting diode is provided. The switching element control device includes: a voltage detection circuit detecting a voltage across first and second main electrodes of the switching element; a comparator circuit comparing the voltage detected by the voltage detection circuit with a threshold voltage; and a drive circuit controlling driving of the switching element. The comparator circuit controls the drive circuit so that an on signal is not provided to the switching element when the detected voltage exceeds the threshold voltage.

Abstract: A display device according to an embodiment of the present invention includes first and second electroluminescent elements on a substrate. The first and second electroluminescent elements each include a lower electrode, a functional layer including a light-emitting layer, an upper electrode, and a first or second color filter. The display device includes an overlapping region where the first and second color filters overlap each other in a plan view. Light transmitted through the first color filter has a higher luminosity factor than light transmitted through the second color filter. L2>L1, wherein L2 is the distance between the light-emitting region of the second electroluminescent element and the second color filter, and L1 is the distance between the light-emitting region of the first electroluminescent element and the first color filter.

Abstract: There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: A semiconductor device includes a semiconductor substrate, and the semiconductor substrate is divided into an IGBT region, a diode region, and a MOSFET region. A drift layer of n?-type is provided in the semiconductor substrate. The drift layer is shared among the IGBT region, the diode region, and the MOSFET region. In the semiconductor substrate, the diode region is always disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.

Abstract: There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.

Abstract: A signal processing device includes an oscillation circuit, a protection target circuit, a delay time detection circuit, and a clock control circuit. The oscillation circuit receives the frequency control signal and generates a clock signal having a frequency corresponding to the frequency control signal. According to the above-mentioned configuration, even when a delay failure due to aging occurs in the signal processing device, it is possible to prevent a malfunction.

Abstract: The present disclosure provides an electronic device including a plurality of first electrodes, a second electrode, a functional layer disposed between each first electrode and the second electrode, and an insulating layer having a slope portion on the first electrode, wherein the functional layer is continuously disposed so as to cover the first electrode, a neighboring first electrode, and the insulating layer covering the first electrode and the neighboring first electrode, the functional layer on the first electrode has a layer thickness smaller than a height from an upper surface of the first electrode to an upper surface of the insulating layer, and the functional layer on the slope portion of the insulating layer has a layer thickness of 20 nm or more in a direction perpendicular to a slope surface of the slope portion.

Abstract: An organic device is provided. The device comprises a substrate and a plurality of light emitting elements formed on a first surface of the substrate. Each of the plurality of light emitting elements includes, from a side of the first surface, a first electrode, an organic layer formed on the first electrode and including a light emitting layer, and a second electrode formed on the organic layer. The organic device further comprises a third electrode formed between the first electrodes of adjacent light emitting elements of the plurality of light emitting elements, and an insulating layer covering a portion between the first electrode and the third electrode, an end portion of the first electrode, and an end portion of the third electrode. The insulating layer includes a recess between the first electrode and the third electrode.

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.

Abstract: A semiconductor apparatus includes a semiconductor substrate and a second electrode. Semiconductor substrate includes a device region and a peripheral region. An n? drift region and second electrode extend from device region to peripheral region. An n buffer layer and a p collector layer are provided also in peripheral region. Peripheral region is provided with an n type region. N type region is in contact with second electrode and n buffer layer. The turn-off loss of the semiconductor apparatus is reduced.

Abstract: A switching element control device for controlling a switching element incorporating a reverse conducting diode is provided. The switching element control device includes: a voltage detection circuit detecting a voltage across first and second main electrodes of the switching element; a comparator circuit comparing the voltage detected by the voltage detection circuit with a threshold voltage; and a drive circuit controlling driving of the switching element. The comparator circuit controls the drive circuit so that an on signal is not provided to the switching element when the detected voltage exceeds the threshold voltage.

Abstract: There is provided a semiconductor device having a semiconductor element and a protective film that is disposed above the semiconductor element and contains silicon atoms and nitrogen atoms, wherein the protective film has an average number of nitrogen atoms bonded to one silicon atom of less than or equal to 1.35.

Abstract: A semiconductor device includes an IGBT as a switching element, and a diode. The IGBT includes: a p type channel doped layer formed in a surface layer part on a front side of a semiconductor substrate; a p+ type diffusion layer and an n+ type source layer individually selectively formed in a surface layer part of the p type channel doped layer; and an emitter electrode connected to the n+ type source layer and the p+ type diffusion layer. A part of the p type channel doped layer reaches a front-side surface of the semiconductor substrate and is connected to the emitter electrode. On the front-side surface of the semiconductor substrate, the p+ type diffusion layer is interposed between the p type channel doped layer and an n+ type source layer, and the p type channel doped layer and the n+ type source layer are not adjacent to each other.

Abstract: A semiconductor device including a first conductivity type substrate, a first conductivity type carrier store layer formed on an upper surface side of the substrate, a second conductivity type channel dope layer formed on the carrier store layer, a first conductivity type emitter layer formed on the channel dope layer, a gate electrode in contact with the emitter layer, the channel dope layer and the carrier store layer via a gate insulating film, and a second conductivity type collector layer formed on a lower surface side of the substrate, wherein the gate insulating film has a first part in contact with the emitter layer and the channel dope layer, a second part in contact with the carrier store layer, and a third part in contact with the substrate, and at least a part of the second part is thicker than the first part and the third part.

Abstract: An organic photoelectric conversion element includes an anode, a cathode, and a photoelectric conversion portion between the anode and the cathode. The photoelectric conversion portion includes a first organic compound layer containing an organic compound. Also, a second organic compound layer is disposed between the cathode and the photoelectric conversion portion. The second organic compound layer contains an organic compound having an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.