Patents by Inventor Tetsuya Taki
Tetsuya Taki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140203413Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.Type: ApplicationFiled: December 16, 2011Publication date: July 24, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Johannes Baur, Berthold Hahn, Volker Härle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
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Publication number: 20140057417Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.Type: ApplicationFiled: February 15, 2012Publication date: February 27, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christian Leirer, Anton Vogl, Andreas Biebersdorf, Joachim Hertkorn, Tetsuya Taki, Rainer Butendeich
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Patent number: 8592840Abstract: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x?1, which is situated at a same side of the active zone as the n-doped layer sequence.Type: GrantFiled: December 20, 2010Date of Patent: November 26, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Matthias Peter, Tobias Meyer, Nikolaus Gmeinwieser, Tetsuya Taki, Hans-Jürgen Lugauer, Alexander Walter
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Patent number: 8581236Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.Type: GrantFiled: June 30, 2010Date of Patent: November 12, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Matthias Peter, Tobias Meyer, Jürgen Off, Tetsuya Taki, Joachim Hertkorn, Matthias Sabathil, Ansgar Laubsch, Andreas Biebersdorf
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Publication number: 20130264598Abstract: A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.Type: ApplicationFiled: September 30, 2011Publication date: October 10, 2013Applicant: OSRAM OPTP SEMICONDUCTORS GMBHInventors: Joachim Hertkorn, Tetsuya Taki, Jürgen Off
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Publication number: 20120319126Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.Type: ApplicationFiled: December 23, 2010Publication date: December 20, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Rainer Butendeich, Alexander Walter, Matthias Peter, Tobias Meyer, Tetsuya Taki, Hubert Maiwald
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Publication number: 20120313138Abstract: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa 1-xN-based intermediate layer where 0<x?1, which is situated at a same side of the active zone as the n-doped layer sequence.Type: ApplicationFiled: December 20, 2010Publication date: December 13, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Matthias Peter, Tobias Meyer, Nikolaus Gmeinwieser, Tetsuya Taki, Hans-Jürgen Lugauer, Alexander Walter
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Publication number: 20120298964Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.Type: ApplicationFiled: December 27, 2010Publication date: November 29, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Peter, Tobias Meyer, Alexander Walter, Tetsuya Taki, Juergen Off, Rainer Butendeich, Joachim Hertkorn
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Publication number: 20120298951Abstract: An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5).Type: ApplicationFiled: July 22, 2010Publication date: November 29, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Tobias Meyer, Matthias Peter, Rainer Butendeich, Tetsuya Taki, Juergen Off, Alexander Walter
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Publication number: 20120161103Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.Type: ApplicationFiled: June 30, 2010Publication date: June 28, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Peter, Tobias Meyer, Jürgen Off, Tetsuya Taki, Joachim Hertkorn, Matthias Sabathil, Ansgar Laubsch, Andreas Biebersdorf
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Publication number: 20110316028Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).Type: ApplicationFiled: September 16, 2009Publication date: December 29, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Hoeppel, Matthias Peter, Ulrich Zehnder, Tetsuya Taki, Andreas Leber, Rainer Butendeich, Thomas Bauer
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Patent number: 8076684Abstract: A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.Type: GrantFiled: April 5, 2007Date of Patent: December 13, 2011Assignee: Toyoda Gosei Co., Ltd.Inventor: Tetsuya Taki
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Patent number: 7662490Abstract: A near-infrared shield according to the present invention includes a base and a near-infrared absorption layer disposed on one main surface of the base. When the near-infrared shield is irradiated from the near-infrared absorption layer side with xenon light having a wavelength of 380 nm to 1200 nm at an illuminance of 60 W/m2 (an energy density in a range of 300 nm to 400 nm) for 16 hours under a condition of BPT of 63° C. and a relative humidity of 50%, chromaticity changes ?x, ?y of transmitted light, which are shown in a chromaticity diagram of a CIE1931XYZ color system, are 0.005 or less respectively. The near-infrared shield has an excellent near-infrared shielding property and an excellent light resistance, and its near-infrared absorptivity does not deteriorate even after long-term storage.Type: GrantFiled: November 17, 2005Date of Patent: February 16, 2010Assignee: Hitachi Maxell, LtdInventors: Noriaki Otani, Yuji Yamashita, Teruhisa Miyata, Tetsuya Taki
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Patent number: 7629619Abstract: A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.Type: GrantFiled: January 27, 2006Date of Patent: December 8, 2009Assignee: Toyota Gosei Co., Ltd.Inventors: Tetsuya Taki, Mitsuhisa Narukawa, Masato Aoki, Koji Okuno, Yusuke Toyoda, Kazuki Nishijima, Shuhei Yamada
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Publication number: 20070241353Abstract: A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.Type: ApplicationFiled: April 5, 2007Publication date: October 18, 2007Applicant: TOYODA GOSEI CO., LTD.Inventor: Tetsuya Taki
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Patent number: 7244957Abstract: In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 ?m in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.Type: GrantFiled: February 24, 2005Date of Patent: July 17, 2007Assignee: Toyoda Gosei Co., Ltd.Inventors: Naoki Nakajo, Masao Kamiya, Tetsuya Taki
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Patent number: 7190001Abstract: A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.Type: GrantFiled: August 26, 2004Date of Patent: March 13, 2007Assignee: Toyoda Gosei Co., Ltd.Inventor: Tetsuya Taki
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Publication number: 20060169990Abstract: The invention relates to a Group III nitride-based compound semiconductor light-emitting device having a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer, wherein the first and second regions are formed such that the lattice constants of the first and second layers approach the lattice constant of the well layer.Type: ApplicationFiled: January 27, 2006Publication date: August 3, 2006Applicant: Toyoda Gosei Co., Ltd.Inventors: Tetsuya Taki, Mitsuhisa Narukawa, Masato Aoki, Koji Okuno, Yusuke Toyoda, Kazuki Nishijima, Shuhei Yamada
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Publication number: 20060105175Abstract: A near-infrared shield according to the present invention includes a base and a near-infrared absorption layer disposed on one main surface of the base. When the near-infrared shield is irradiated from the near-infrared absorption layer side with xenon light having a wavelength of 380 nm to 1200 nm at an illuminance of 60 W/m2 (an energy density in a range of 300 nm to 400 nm) for 16 hours under a condition of BPT of 63° C. and a relative humidity of 50%, chromaticity changes ?x, ?y of transmitted light, which are shown in a chromaticity diagram of a CIE1931XYZ color system, are 0.005 or less respectively. The near-infrared shield has an excellent near-infrared shielding property and an excellent light resistance, and its near-infrared absorptivity does not deteriorate even after long-term storage.Type: ApplicationFiled: November 17, 2005Publication date: May 18, 2006Inventors: Noriaki Otani, Yuji Yamashita, Teruhisa Miyata, Tetsuya Taki
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Publication number: 20060097283Abstract: In a group III-nitride-based compound semiconductor device 100, an intermediate layer 108 is 5 provided between a p-AlGaN layer 107 and a p-GaN layer 109, to each of which an acceptor impurity is added. On this occasion, the intermediate layer 108 is doped with a donor impurity in a concentration, by which holes generated by an acceptor impurity introduced into the intermediate layer 108 during the formation of the p-AlGaN layer 107 are substantially compensated. As a result, the conductivity of the intermediate layer 108 becomes extremely low, and therefore the electrostatic withstand voltage of the group III-nitride-based compound semiconductor device 100 improves significantly.Type: ApplicationFiled: September 1, 2004Publication date: May 11, 2006Inventor: Tetsuya Taki