Abstract: A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.

Abstract: After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3 gas is circulated together with H2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.

Abstract: In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 ?m in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

Abstract: In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a substrate, a semiconductor layer of ZnxCd1?xSySe1?y (0?x?1, 0?y?1) which receives a part of blue light from the light-emitting layer to thereby emit yellow light, is interposed between the n-type Group III nitride compound semiconductor layer and the light-emitting layer.

Abstract: A process for the fabrication of a III nitride-based compound semiconductor includes a first crystal growth step for growing a semiconductor layer A made of a III nitride-based compound semiconductor on a crystal growth surface, and a second crystal growth step for growing a semiconductor layer B made of a III nitride-based compound semiconductor on the semiconductor layer A in which a lateral crystal growth rate of the semiconductor layer A in the first crystal growth step is lower than a lateral crystal growth rate of the semiconductor layer B in the second crystal growth step.

Abstract: A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.

Abstract: A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.

Abstract: In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a substrate, a semiconductor layer of ZnxCd1−xSySe1−y (0<x<1, 0<y<1) which receives a part of blue light from the light-emitting layer to thereby emit yellow light, is interposed between the n-type Group III nitride compound semiconductor layer and the light-emitting layer.

Abstract: After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3 gas is circulated together with H2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.

Abstract: An IC card unit has a memory, various types of image processing sections, and an IC card interface and, when fitted to an external information processing device, it is contained therein. An image input unit, which has an image forming part and an image pick-up part and which is protruded outward of the information processing device, captures an image of a subject. The image processing sections execute image processing on image data written into the memory, and converts the data into image data optimum for display by an image display of the information processing device. The IC card interface transmits image data that has undergone the image processing to the information processing device side, enabling real-time monitoring. Access from the information processing device side is enabled so that image processing conditions and the like can be set.

Abstract: The present invention provides a dispersion ink excellent not only high-definition print quality but also re-dispersibility. More particularly, the present invention provides a dispersion ink comprising at least a pigment or a disperse dye, which has a particle diameter of 75 nm or less, an amphiphilic compound, and water, said amphiphilic compound having a hydrophilic portion composed of a poly(ethylene oxide) and a hydrophobic portion composed of an alkyl group and/or an aromatic group and bonded to the hydrophilic portion, said amphiphilic compound containing at least one ionic group at the end of the poly(ethylene oxide) constituting the hydrophilic portion which is not bonded to the hydrophobic portion, and the whole amphiphilic compound having a molecular weight of 5,000 or less, wherein between the particle diameter of said pigment or said disperse dye and the molecular weight of said amphiphilic compound, there is the relationship represented by the following expression (1):0.004.ltoreq.

Abstract: A method of reproducing using a rotary head type tape recorder. The method is based on the detection or reproduction of a synchronizing signal of each ATF area which has been recorded and formed at the starting and terminal ends of each track of a magnetic tape. Crosstalk components of pilot signals from two tracks adjacent to a trace track are sampled, thereby to control a reproducing tracking according to an area division type ATF method. When reproducing the magnetic tape which has been recorded in a long-time mode, in which the tape travelling speed and the drum revolution speed are respectively set to 1/2 of the standard travelling speed and to 1/2 of the standard revolution speed, the tape travelling speed is set to 1/2 of the standard travelling speed (i.e., a travelling speed determined for the long-time mode), and the drum revolution speed is set to the standard revolution speed (i.e., a speed double of the revolution speed determined for the long-time mode).