Abstract: Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.

Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of direct-current (“DC”) voltage through a switching system to electrodes disposed in the ESC substrate support. In some embodiments, the switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. In some embodiments, during processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

Abstract: The present disclosure provides various three-dimensional (3D) objects, some of which comprise a wire or 3D plane. Disclosed herein are methods, apparatus, software, and systems for their generation that may reduce or eliminate the need for auxiliary support during the formation of the 3D objects. The methods, apparatuses, software, and systems of the present disclosure may allow the formation of objects with short, diminished number, and/or spaced apart auxiliary support structures. These 3D objects may be objects with adjacent surfaces such as hanging structures and planar hollow 3D objects.

Abstract: Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.

Abstract: Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films.