Patents by Inventor Thai-Cheng Chua
Thai-Cheng Chua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8900897Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.Type: GrantFiled: January 10, 2013Date of Patent: December 2, 2014Assignee: Intermolecular, Inc.Inventors: Philip Kraus, Thai Cheng Chua, Yoga Saripalli
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Publication number: 20140191262Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.Type: ApplicationFiled: January 10, 2013Publication date: July 10, 2014Applicant: Intermolecular Inc.Inventors: Philip Kraus, Thai Cheng Chua, Yoga Saripalli
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Publication number: 20140124788Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.Type: ApplicationFiled: November 6, 2012Publication date: May 8, 2014Applicant: INTERMOLECULAR, INC.Inventors: Philip Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan
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Publication number: 20140127887Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.Type: ApplicationFiled: March 15, 2013Publication date: May 8, 2014Applicant: INTERMOLECULAR, INC.Inventors: Philip Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan
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Publication number: 20140092462Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.Type: ApplicationFiled: December 11, 2013Publication date: April 3, 2014Applicant: Intermolecular, Inc.Inventors: Minh Huu Le, Thai Cheng Chua, Guowen Ding, Minh Anh Nguyen, Yu Wang, Guizhen Zhang
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Patent number: 8665511Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.Type: GrantFiled: December 27, 2011Date of Patent: March 4, 2014Assignee: Intermolecular, Inc.Inventors: Hien Minh Huu Le, Thai Cheng Chua, Guowen Ding, Minh Anh Nguyen, Yu Wang, Guizhen Zhang
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Publication number: 20140014965Abstract: Chemical vapor deposition (CVD) systems and methods for forming layers on a substrate are disclosed. Embodiments of the system comprise a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining site isolation. Methods of forming layers on a substrate comprise forming a first layer from a precursor on a substrate in a CVD environment, contacting the substrate with plasma in a plasma environment, wherein the forming and contacting steps are performed in the unitary system and repeating the forming and contacting steps until a layer of desired thickness is formed. The forming and contacting steps can be performed to form devices having multiple distinct layers, such as Group III-V thin film devices.Type: ApplicationFiled: July 11, 2012Publication date: January 16, 2014Inventors: Philip A. Kraus, Thai Cheng Chua, Timothy Joseph Franklin, Sandeep Nijhawan
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Publication number: 20130313566Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.Type: ApplicationFiled: August 1, 2013Publication date: November 28, 2013Applicant: Intermolecular, Inc.Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
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Patent number: 8524581Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.Type: GrantFiled: December 29, 2011Date of Patent: September 3, 2013Assignee: Intermolecular, Inc.Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
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Publication number: 20130171805Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.Type: ApplicationFiled: December 29, 2011Publication date: July 4, 2013Applicant: Intermolecular Inc.Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
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Publication number: 20130163064Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.Type: ApplicationFiled: December 27, 2011Publication date: June 27, 2013Applicant: Intermolecular Inc.Inventors: Hien Minh Huu Le, Thai Cheng Chua, Guowen Ding, Minh Anh Anh Nguyen, Yu Wang, Guizhen Zhang
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Publication number: 20130130481Abstract: Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Applicant: Intermolecular, Inc.Inventors: Thai Cheng Chua, Timothy Joseph Franklin, Philip Kraus
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Patent number: 8377803Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.Type: GrantFiled: February 16, 2012Date of Patent: February 19, 2013Assignee: Intermolecular, Inc.Inventors: Philip A. Kraus, Thai Cheng Chua, Sandeep Nijhawan
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Patent number: 8318590Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.Type: GrantFiled: February 17, 2012Date of Patent: November 27, 2012Assignee: Intermolecular, Inc.Inventors: Philip A. Kraus, Thai Cheng Chua, Sandeep Nijhawan
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Publication number: 20120208357Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.Type: ApplicationFiled: February 17, 2012Publication date: August 16, 2012Applicant: Intermolecular, Inc.Inventors: Philip A. Kraus, Sandeep Nijhawan, Thai Cheng Chua
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Publication number: 20120208352Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.Type: ApplicationFiled: February 16, 2012Publication date: August 16, 2012Applicant: Intermolecular, Inc.Inventors: Philip A. Kraus, Sandeep Nijhawan, Thai Cheng Chua
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Patent number: 8143147Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.Type: GrantFiled: February 10, 2011Date of Patent: March 27, 2012Assignee: Intermolecular, Inc.Inventors: Philip A. Kraus, Sandeep Nijhawan, Thai Cheng Chua
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Patent number: 7964514Abstract: A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, exposing the surface of the substrate to a hydrogen-free nitrogen source, and annealing the substrate. A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, including exposing the surface of the substrate to a gas selected from the group of oxygen, nitric oxide, and nitrous oxide, and exposing the surface of the substrate to a hydrogen-free nitrogen source, wherein the hydrogen-free nitrogen source is a gas selected from the group of nitrogen, nitric oxide, and nitrous oxide.Type: GrantFiled: March 2, 2006Date of Patent: June 21, 2011Assignee: Applied Materials, Inc.Inventor: Thai Cheng Chua
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Patent number: 7888217Abstract: A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.Type: GrantFiled: October 20, 2005Date of Patent: February 15, 2011Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Cory Czarnik, Christopher Sean Olsen, Khaled Z. Ahmed, Philip Allan Kraus
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Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
Patent number: 7837838Abstract: The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.Type: GrantFiled: December 20, 2006Date of Patent: November 23, 2010Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Alex M. Paterson, Steven Hung, Patricia M. Liu, Tatsuya Sato, Valentin Todorow, John P. Holland