Abstract: Systems and methods are disclosed that provide an infrared-transmissive dome, such as for infrared imaging applications. For example, an infrared camera system includes a housing having a lens coupled to the housing and an infrared detector within the housing configured to receive infrared energy passing through the lens. An infrared-transmissive dome, coupled to the infrared camera system, includes a main body providing a hollow, hemispherical-shaped dome, with the main body made of an ultra-high molecular weight or a very-high molecular weight polyethylene material. The main body may have a wall thickness equal to or less than approximately 0.012 inches to allow infrared transmittance greater than approximately sixty five percent through the main body to the lens for infrared imaging in a wavelength range of approximately three to fourteen micrometers.

Abstract: An infrared detector is disclosed having a first substrate made of indium phosphide and a first layer formed on the first substrate and made of indium gallium arsenide. The infrared detector further includes a second substrate, which is made of silicon and has a readout integrated circuit that is electrically coupled to the first layer. After the indium gallium arsenide material is formed, the first substrate is substantially thinned or removed by mechanical techniques and/or a chemical etch process to extend the spectral range of the infrared detector to wavelengths beyond that of a conventional infrared detector.

Abstract: An infrared detector is disclosed having a first substrate made of indium phosphide and a first layer formed on the first substrate and made of indium gallium arsenide. The infrared detector further includes a second substrate, which is made of silicon and has a readout integrated circuit that is electrically coupled to the first layer. After the indium gallium arsenide material is formed, the first substrate is substantially thinned or removed by mechanical techniques and/or a chemical etch process to extend the spectral range of the infrared detector to wavelengths beyond that of a conventional infrared detector.

Abstract: Analog signal voltages are updated sequentially in a first sample-and-hold circuit, while an emitter element displays a pixel of a first display frame in response to a stored analog signal voltage in an isolated parallel second sample-and-hold circuit. After all unit cells are updated, the switches are reversed for the two parallel sample-and-hold circuits, displaying a pixel of a second display frame in response to an updated stored analog signal voltage in the first sample-and-hold circuit. The operation of the two parallel circuits alternates for each sequential frame. A constant current source in the unit cell provides constant power dissipation and temperature, independent from variations in emitter element current, up to a predetermined constant current limit. For emitter element currents greater than the predetermined limit, an independent current source in the unit cell is automatically activated without involving external control logic.

Abstract: A dual sample-and-hold architecture in each unit cell of a read-in-integrated-circuit (RIIC) provides maximum frame rate without frame overlap. Analog pixel signals are updated sequentially in one sample-and-hold capacitor, while an emitter element displays a pixel of a display frame in response to a stored analog signal voltage on an isolated second sample-and-hold capacitor. After all unit cells are updated, the signals on the two capacitors are combined, updating all emitter elements for the next frame. A voltage mode amplifier as an emitter driver provides a more nearly linear dependence of infrared power output on signal voltage than do previous transconductance amplifiers. A digital to analog converter (DAC) on the RIIC substrate results in a simplified interface to the RIIC and in an increased immunity to noise.