Abstract: A surgical system includes a surgical instrument that is sensitive to backlash that would adversely affect the transmission of controlled torque and position to the surgical instrument. The surgical instrument is coupled to motors in a surgical instrument manipulator assembly via a mechanical interface. The combination of the mechanical interface and surgical instrument manipulator assembly have low backlash, e.g., less than 0.7 degrees. The backlash is controlled in the surgical instrument manipulator assembly. From the drive output disk in the surgical instrument manipulator assembly to the driven disk of the surgical instrument, the mechanical interface has zero backlash for torque levels used in surgical procedures.

Abstract: A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: Tetraniliprole containing formulations and methods for using them for controlling rootworm infestation are discussed. The formulations of the present invention provide improved delivery active ingredients by the ability to provide substantially higher degree of control as compared to other diamide counterparts.

Abstract: In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio?100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

Abstract: In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio?100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

Abstract: Tetraniliprole containing formulations and methods for using them for controlling rootworm infestation are discussed. The formulations of the present invention provide improved delivery active ingredients by the ability to provide substantially higher degree of control as compared to other diamide counterparts.

Abstract: A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: A multilayer substrate can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio?100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

Abstract: Tetraniliprole containing formulations and methods for using them for controlling rootworm infestation are discussed. The formulations of the present invention provide improved delivery active ingredients by the ability to provide substantially higher degree of control as compared to other diamide counterparts.

Abstract: In a method of forming a diamond film, diamond substrate, or diamond window, a silicon substrate is provided and the diamond film, diamond substrate, or diamond window is CVD grown on a surface of the silicon substrate. The grown diamond film, diamond substrate, or diamond window has an aspect ratio ?100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, diamond substrate, or diamond window divided by a thickness of the diamond film, diamond substrate, or diamond window. The silicon substrate has a thickness greater than or equal to 2 mm. The silicon substrate can optionally be removed or separated from the grown diamond film, diamond substrate, or diamond window.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: Tetraniliprole containing formulations and methods for using them for controlling rootworm infestation are discussed. The formulations of the present invention provide improved delivery active ingredients by the ability to provide substantially higher degree of control as compared to other diamide counterparts.

Abstract: A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

Abstract: A multilayer substrate can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)?100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

Abstract: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.