Abstract: An air filter arrangement is disclosed. The air filter arrangement includes strips of media comprising fluted sheets secured to facing sheets and forming inlet and outlet flutes secured to one another in a stack. Media pack arrangements including such stacked media with peripheral, perimeter, housing seal arrangements are described. Also described are air cleaners including the filter cartridges. Methods of assembly and use are also provided. Also, systems of use are described.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: An air cleaner assembly and components therefor are described. The components include features of an air cleaner housing; advantageous main filter cartridges; and, advantageous safety filter cartridge features. Features of the main filter cartridge are provided to engage an access cover of the assembly, and a cartridge support within the housing, in a preferred manner. Methods of assembly and use are also described.

Abstract: An air filter arrangement is (300) disclosed. The air filter arrangement includes strips of media comprising corrugated sheets secured to facing sheets and forming inlet and outlet flutes secured to one another in a stack. Media pack arrangements including such stacked media with a molding arrangement to secure and seal opposite side edges of the media strips, are described. Also described are filter cartridges including such media pack (301) and air cleaners including the filter cartridges. Methods of assembly and use are also provided. Also, systems of use are described.

Abstract: Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

Abstract: Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography.

Abstract: Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film.

Abstract: A V-pack filter includes a frame construction having a first frame structure and a second frame structure. The V-pack filter also includes first and second panel sections mounted in extension between the first and second frame structures. The first panel section has first and second ends. The second panel section has third and fourth ends. The first and third ends have a first distance therebetween while the second and fourth ends have a second distance therebetween. The second distance is generally greater than the first distance. The first and second panel sections and the second frame structure define an air flow aperture. A seal arrangement circumscribes the air flow aperture and projects outwardly from the second frame structure. The first frame structure defines a first receiver indent. Assemblies and methods are also included.

Abstract: Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film.

Abstract: A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography.