Abstract: Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

Abstract: Provided is methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl4 in the presence of a reducing gas under process conditions.

Abstract: A solid delivery precursor is described, which is useful for volatilization to generate precursor vapor for a vapor deposition process. The solid delivery precursor comprises solid bodies of compacted particulate precursor, e.g., in a form such as pellets, platelets, tablets, beads, discs, or monoliths. When utilized in a vapor deposition process such as chemical vapor deposition, pulsed chemical vapor deposition, or atomic layer deposition, the solid delivery precursor in the form of solid bodies of compacted particulate precursor provide substantially increased flux of precursor vapor when subjected to volatilization conditions, in relation to the particulate precursor. As a result, vapor deposition process operation can be carried out in shorter periods of time, thereby achieving increased manufacturing rates of products such as semiconductor products, flat-panel displays, solar panels, LEDs, optical coatings, and the like.

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)6) or tungsten hexacarbonyl (W(CO)6) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)6) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of H2O is utilized. This pulsing with H2O vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)6-based CVD processes.

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

Abstract: Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)?SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4?y.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.

Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

Abstract: Plasma enhanced atomic layer deposition (PEALD) processes which use a ruthenium precursor of formula RARBRu(0), wherein RA is an aryl group-containing ligand, and RB is a diene group-containing ligand, along with a reducing plasma applied at greater than 200 W are described. Use of the RARBRu(0) ruthenium precursors in PEALD with +200 W reducing plasma such as ammonia plasma, can provide very good rates of deposition of Ru, have lower carbon and less resistivity, and provide very dense Ru films. The method can be used to form well-formed Ru film with high conformality on integrated circuits and other microelectronic devices.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)=SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4?y.