Abstract: A process for forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum dioxydichloride (MoO2Cl2) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. Advantageously, the robust process does not require pre-treatment of the substrate with a nucleating agent. In certain embodiments, the process results in the bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD or ALD.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

Abstract: A multipass cell assembly for monitoring of fluid is described, as well as fluid processing systems utilizing same, and associated methods of use of such multipass cell assembly for fluid monitoring. The multipass cell assembly is usefully employed in fluid processing operations such as monitoring of vapor deposition process reactants, e.g., reactants used for vapor deposition metallization of tungsten from a tungsten carbonyl precursor.

Abstract: Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)=SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4?y.

Abstract: The invention is directed to a vaporizer or ampoule assembly with an improved vaporizer vessel body and support tray assembly configuration located therein that together increase the vaporizable material utilization and uniformity.

Abstract: A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

Abstract: A solid delivery precursor is described, which is useful for volatilization to generate precursor vapor for a vapor deposition process. The solid delivery precursor comprises solid bodies of compacted particulate precursor, e.g., in a form such as pellets, platelets, tablets, beads, discs, or monoliths. When utilized in a vapor deposition process such as chemical vapor deposition, pulsed chemical vapor deposition, or atomic layer deposition, the solid delivery precursor in the form of solid bodies of compacted particulate precursor provide substantially increased flux of precursor vapor when subjected to volatilization conditions, in relation to the particulate precursor. As a result, vapor deposition process operation can be carried out in shorter periods of time, thereby achieving increased manufacturing rates of plays, solar panels, LEDs, optical coatings, and the like.

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

Abstract: A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

Abstract: A multipass cell assembly for monitoring of fluid is described, as well as fluid processing systems utilizing same, and associated methods of use of such multipass cell assembly for fluid monitoring. The multipass cell assembly is usefully employed in fluid processing operations such as monitoring of vapor deposition process reactants, e.g., reactants used for vapor deposition metallization of tungsten from a tungsten carbonyl precursor.