Abstract: The present invention comprises compounds of Formula I wherein: R1, R2, R3, R4, R5, R7, R8, and are defined in the specification. The invention also comprises a method of treating or ameliorating a syndrome, disorder or disease, wherein the syndrome, disorder or disease is rheumatoid arthritis or psoriasis. The invention also comprises a method of modulating ROR?t activity in a mammal by administration of a therapeutically effective amount of at least one compound of Formula I.

Abstract: A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.

Abstract: An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.

Abstract: The present invention comprises compounds of Formula I wherein: R1, R2, R3, R4, R5, R7, R8, and are defined in the specification. The invention also comprises a method of treating or ameliorating a syndrome, disorder or disease, wherein the syndrome, disorder or disease is rheumatoid arthritis or psoriasis. The invention also comprises a method of modulating ROR?t activity in a mammal by administration of a therapeutically effective amount of at least one compound of Formula I.

Abstract: A drive device for a motor vehicle having a first drive assembly, a second drive assembly, and a planetary gear unit, via which the first drive assembly and the second drive assembly are operatively connected to a drivable axle of the motor vehicle. The first drive assembly and the drivable axle are operatively connected to the planetary gear unit. The second drive assembly as well as an auxiliary drive having an auxiliary assembly are operatively connected permanently to the planetary gear unit. The auxiliary drive has a third drive assembly, which is coupled at least intermittently to the auxiliary assembly.

Abstract: The present invention comprises compounds of Formula I. wherein: X, A1, A2, A3, A4, R1, R2, and R3 are defined in the specification. The invention also comprises a method of treating or ameliorating a syndrome, disorder or disease, wherein said syndrome, disorder or disease is rheumatoid arthritis or psoriasis. The invention also comprises a method of modulating ROR?t activity in a mammal by administration of a therapeutically effective amount of at least one compound of claim 1.

Abstract: The present invention comprises compounds of Formula I. wherein: R1, R2, R3, R5, A1, A2, and are defined in the specification. The invention also comprises a method of treating or ameliorating a syndrome, disorder or disease, wherein the syndrome, disorder or disease is rheumatoid arthritis or psoriasis. The invention also comprises a method of modulating ROR?t activity in a mammal by administration of a therapeutically effective amount of at least one compound of Formula I.

Abstract: The present invention comprises methods of making 5-(2,3-dichloro-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl)phenyl)-N-(2-hydroxy-2-methylpropyl)-4-(R1-1-carbonyl)thiazole-2-carboxamide, wherein R1 is defined in the specification.

Abstract: The invention provides modulators for the orphan nuclear receptor ROR? and methods for treating ROR? mediated diseases by administrating these novel ROR? modulators to a human or a mammal in need thereof. Specifically, the present invention provides pyrrolo carboxamide compounds of Formula (1) and the enantiomers, diastereomers, N-oxides, tautomers, solvates and pharmaceutically acceptable salts thereof.

Abstract: A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element.

Abstract: An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.

Abstract: A three-dimensional subtraction angiography image data set including a target region of the patient is acquired. A region of interest is selected. An imaging geometry is defined for monitoring the intervention using an X-ray device. The image-obscuring blood vessels that superimpose the region of interest in the imaging geometry and imaging zones that show fractions of the image-obscuring blood vessels in the imaging geometry are determined. Path information relating to the image-obscuring blood vessels is defined. The information relating to the path is input into a two-dimensional forward projection data set. A fluoroscopic image is acquired in the imaging geometry. Pixels showing the image-obscuring blood vessels in the fluoroscopic image are determined using the path information and image intensity information from the fluoroscopic image. A masked image of the image-obscuring blood vessels is subtracted. The fluoroscopic image that has been modified is displayed.

Abstract: A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant.

Abstract: A heat transfer arrangement for a motor vehicle includes a heat exchanger, a heat sink, and a heat pipe, with the heat pipe connected to the heat sink and connected via the first heat exchanger to a heat source of the motor vehicle. A latent heat accumulator is further operatively connected to the heat exchanger.

Abstract: A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.

Abstract: A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.

Abstract: A semiconductor device includes a substrate having a semiconducting surface having formed therein a first active region and a second active region, where the first active region consists of a substantially undoped layer at the surface and a highly doped screening layer of a first conductivity type beneath the first substantially undoped layer, and the second active region consists of a second substantially undoped layer at the surface and a second highly doped screening layer of a second conductivity type beneath the second substantially undoped layer. The semiconductor device also includes a gate stack formed in each of the first active region and the second active region consists of at least one gate dielectric layer and a layer of a metal, where the metal has a workfunction that is substantially midgap with respect to the semiconducting surface.

Abstract: Methods for fabricating semiconductor devices and devices therefrom are provided. A method includes providing a substrate having a semiconducting surface with first and second layers, where the semiconducting surface has a plurality of active regions comprising first and second active regions. In the first active region, the first layer is an undoped layer and the second layer is a highly doped screening layer. The method also includes removing a part of the first layer to reduce a thickness of the substantially undoped layer for at least a portion of the first active region without a corresponding thickness reduction of the first layer in the second active region. The method additionally includes forming semiconductor devices in the plurality of active regions. In the method, the part of the first layer removed is selected based on a threshold voltage adjustment required for the substrate in the portion of the first active region.

Abstract: The invention provides modulators for the orphan nuclear receptor RORy and methods for treating RORy mediated diseases by administering these novel RORy modulators to a human or a mammal in need thereof. Specifically, the present invention provides carboxamide containing cyclic compounds of Formula (1) to Formula (5) and the enantiomers, diastereomers, tautomers, /V-oxides, solvates and pharmaceutically acceptable salts thereof.

Abstract: The invention discloses a device for selecting pulses comprising an optical waveguide for guiding the optical radiation along an axis; comprising a first electro-optical modulator designed to modulate the optical transparency of the waveguide; comprising a second electro-optical modulator designed to modulate the optical transparency of the waveguide, wherein the first modulator and the second modulator are arranged one after the other on the axis of the waveguide, and further comprising at least one control circuit designed to actuate the first modulator and the second modulator at offset times, and characterized in that a substrate of a semiconductive material is provided, the waveguide and the at least one control circuit are arranged on the substrate.