Abstract: Plasticizer migration-resistant, UV-curable hotmelt adhesive for graphics films and labels made of plasticized PVC Described here is a UV-curable hotmelt adhesive largely resistant to plasticizer migration and comprising a UV-crosslinkable poly(meth)acrylate formed from methyl acrylate, C4-18 alkyl (meth)acrylate, monomer with acid groups, copolymerized photoinitiator and optionally further monomers. The hotmelt adhesive further comprises an aliphatic polyester polymer. The use of the hotmelt adhesive on graphics films and self-adhesive labels made of plasticized PVC is also described.

Abstract: A device and a method for making a semiconductor device including bonding a first bonding partner to a second bonding partner. The device comprises a lower tool and an upper tool, the upper tool including a plunger having a bottom side facing the lower tool at which bottom side a vacuum is creatable, so that the first bonding partner can be picked up by vacuum from the upper tool and positioned on the second bonding partner.

Abstract: A semiconductor substrate and a method for producing it is disclosed. In one embodiment, a contact region and a corresponding contact material of the semiconductor substrate are formed, in regions or completely, with a protection against oxidation.

Abstract: A method and a device is provided for levelling an area region on the surface of a metal or metallization layer of a carrier. The area region is made planar by the action of a stamp or of a roller.

Abstract: In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

Abstract: An arrangement for cooling a power semiconductor module, the power semiconductor module having a substrate with a ceramic plate and may have a metallization thereon, the arrangement has a container for the intake of a coolant with a heat-conducting plate; the heat-conducting plate having two sides, one side joined to the metallization of the substrate and the other side being in contact with the coolant; wherein the heat-conducting plate is made of materials having a metal matrix composite (MMC) material with a filling content, which results in a thermal expansion of below that of copper.

Abstract: A method for structured application of a laminatable intermediate layer (9) to a substrate (1) for a semiconductor module, wherein a separating layer is indirectly or directly applied to the substrate (1) over a large surface, the intermediate layer (9) is applied to the substrate (1), including the separating layer(s), by lamination, over a large surface, the intermediate layer (9) is opened in places on the substrate (1), where recesses are provided for the intermediate layer (9), and the separating layer (8) is removed in these places.

Abstract: A device and a method for making a semiconductor device including bonding a first bonding partner to a second bonding partner. The device comprises a lower tool and an upper tool, the upper tool including a plunger having a bottom side facing the lower tool at which bottom side a vacuum is creatable, so that the first bonding partner can be picked up by vacuum from the upper tool and positioned on the second bonding partner.

Abstract: A composite material and a base plate made of this composite material for mounting electrical components and for connecting these components to a cooling device is disclosed. In one embodiment, the composite material includes a matrix material and fibers embedded therein. The fibers have in this case an anisotropic, directionally optimized distribution in the matrix material, so that heat occurring in a locally confined area can be effectively distributed and dissipated. The material of the fibers includes SiC, highly graphitized carbon or diamond. The fibers are arranged in the matrix material in various fiber levels, the fibers in the upper fiber levels being oriented predominantly horizontally in relation to a reference area and the fibers in the lower fiber levels being oriented predominantly vertically in relation to the reference area.

Abstract: A power semiconductor arrangement has an electrically insulating and thermally conductive substrate, which is provided with structured metallization on at least one side, a cooling device which is in thermal contact with the other side of the substrate, at least one semiconductor component which is arranged on the substrate and is electrically connected to the structured metallization, an entirely or partially electrically insulating film which is arranged at least on that side of the substrate at which the at least one semiconductor component is placed, and which is laminated without any cavities onto the substrate including or excluding the at least one semiconductor component, and a contact-pressure device which exerts a force on the substrate locally and via the at least one semiconductor component such that the substrate is pressed against the cooling device.

Abstract: The invention relates to a high-voltage module comprising a housing (9) which accommodates at least one structural component (4, 5) that is fastened on a metal-ceramics substrate from a ceramic layer (1) comprising a first main face (11) and a second main face (12) opposite said first main face (11), an upper metal layer (15) on the first main face (11) and a lower metal layer (16) on the second main face (12). The high-voltage module is further characterized by comprising on the outer edges (14) of the substrate either a cast from weakly conductive particles (17) and a gel, or a cast from particles having a high dielectric constant as compared to the cast gel (17), and a gel.

Abstract: An arrangement for cooling a power semiconductor module, the power semiconductor module having a substrate with a ceramic plate and may have a metallization thereon, the arrangement has a container for the intake of a coolant with a heat-conducting plate; the heat-conducting plate having two sides, one side joined to the metallization of the substrate and the other side being in contact with the coolant; wherein the heat-conducting plate is made of materials having a metal matrix composite (MMC) material with a filling content, which results in a thermal expansion of below that of copper.

Abstract: A power semiconductor arrangement has a heat-removing base with at least one planar exterior. The base consists of a metal material or is provided with a metal coat. The exterior is at least partially provided with an electrically insulating oxide layer on top of the metal material. The power semiconductor arrangement also has a power semiconductor component that is disposed on the one exterior of the base in such a manner that it is electrically insulated from the base by the oxide layer. An electrically insulated film is at least partially laminated onto the one exterior across the power semiconductor component. The film, in the area of the power semiconductor component, is provided with recesses for contacting the power semiconductor component. An upper metallization layer is applied to the power semiconductor component on top of the film and its recesses across a large area thereof or in a structured manner.

Abstract: In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

Abstract: A composite material and a base plate made of this composite material for mounting electrical components and for connecting these components to a cooling device is disclosed. In one embodiment, the composite material includes a matrix material and fibers embedded therein. The fibers have in this case an anisotropic, directionally optimized distribution in the matrix material, so that heat occurring in a locally confined area can be effectively distributed and dissipated. The material of the fibers includes SiC, highly graphitized carbon or diamond. The fibers are arranged in the matrix material in various fiber levels, the fibers in the upper fiber levels being oriented predominantly horizontally in relation to a reference area and the fibers in the lower fiber levels being oriented predominantly vertically in relation to the reference area.

Abstract: A method for structured application of a laminatable intermediate layer (9) to a substrate (1) for a semiconductor module, wherein a separating layer is indirectly or directly applied to said substrate (1) over a large surface, the intermediate layer (9) is applied to the substrate (1), including the separating layer(s), by lamination, over a large surface, the intermediate layer (9) is opened in places on the substrate (1), where recesses are provided for the intermediate layer (9), and the separating layer (8) is removed in these places.

Abstract: An electrical component is mounted on a substrate. At least one electrical insulation film is provided to electrically insulate the component and at least section of the insulation film is connected to the component and the substrate, in such a way that the surface contours of said section of the insulation film are moulded to the surface contours formed by the component and the substrate. The insulation film has dielectric strength in relation to an electric field strength of more than 10 kV/mm and preferably more than 50 kV/mm. To produce the assembly, the insulation film is laminated onto the substrate, preferably by means of a vacuum. The component is in particular a power semiconductor component.

Abstract: A semiconductor substrate and a method for producing it is disclosed. In one embodiment, a contact region and a corresponding contact material of the semiconductor substrate are formed, in regions or completely, with a protection against oxidation.

Abstract: A circuit arrangement placed on a substrate has at least one semiconductor component arranged on the substrate and having at least one electrical contact surface and at least one connection line also arranged on the substrate and used to electrically contact the contact surface of the semiconductor component. The connection line forms part of a discrete, passive electrical component arranged on the substrate. The electrical contacting of the contact surface of the semiconductor component is carried out during a step of the process and the part of the secrete, passive electrical component is produced. To this end, especially a film consisting of an electrically insulating material is applied to the power semiconductor and to the substrate under a vacuum, and the contact surface of the power semiconductor is then bared. Furthermore, the connection component is carried out and the part of the discrete, passive electrical component is produced.

Abstract: A method and a device is provided for levelling an area region on the surface of a metal or metallization layer of a carrier. The area region is made planar by the action of a stamp or of a roller.