Abstract: The disclosed chip design is directed to a multiplexed decoder chip with M.gtoreq.2. With this arrangement magnetic bubble domains are propagating at one data bit every M cycles (for M = 2 this is every other cycle). Therefore, a unique decoder network using an existing retarding switch can be realized to offer a lower power, highly efficient multiplexed decoder chip with complete selective read-write capability.

Abstract: There is described a magnetic bubble domain device particularly adapted for bubble domain detection. A bubble is supplied via a standard input propagation path, expanded to an elongated bubble comfiguration and replicated into a plurality of bubbles. The plurality of bubbles propagate along a respective plurality of propagation paths and reach a detector portion, preferrably at different times. The detector portion is arranged to receive bubbles along the respective plurality of paths and to produce enlarged bubbles representative of each of the bubbles replicated from the original bubble. Consequently, the original bubble has been enlarged by elongation and by replication wherein detection of the original bubble is enhanced.

Abstract: A unique and compact open coil rotating magnetic field network structure to efficiently package an array of bubble domain devices is disclosed. The field network has a configuration which effectively enables selected bubble domain devices from the array to be driven in a vertical magnetic field and in an independent and uniform horizontal rotating magnetic field. The field network is suitably adapted to minimize undesirable inductance effects, improve capabilities of heat dissipation, and facilitate repair or replacement of a bubble device.

Abstract: This invention relates to an improved network and technique for correcting bubble domain memories of the major/minor loop type. In particular, a selectively insertable correction loop can be provided in a major loop path to insert or remove blank bits so that the effect of defective minor loops can be overcome. The correction networks include propagation loops formed of conventional magnetic bubble domain device elements and a conductor which is selectively alterable to provide a bypass or insertion mode of operation for the correction loop relative to the major loop.

Abstract: A switch device which is disposed between adjacent magnetic bubble domain propagation paths to permit selective, substantially concurrent, exchange of information (i.e. magnetic bubble domains) from one path to the other. The switch is a unique arrangement of substantially conventional components which are selectively activated by application of a current through a control conductor. In one condition, the magnetic bubble domains propagate through the respective paths in the normal manner. In another condition, as a function of the control current supplied to the conductor, the bubbles are exchanged (simultaneously transferred) between the respective paths. In yet another condition, the bubbles in one path are replicated and supplied to another path.

Abstract: A single, compact bias structure to efficiently package a plurality of magnetic bubble domain device chips having different bias requirements. The vertical magnetic field distribution within the bias structure air gap is selectively controlled by a magnetically soft field adjusting assembly suitably attached within the bias structure. The size and configuration of the field adjusting assembly tailors local field variations within the air gap to correspond with the bias requirements of the bubble domain chips disposed therein.

Abstract: An on-chip bubble domain circuit organization utilizing a multi-chip concept is provided. One or more storage registers are separately connected to each of a plurality of propagation channels whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. Each of the propagation channels includes a generator for producing the initial bubbles which are supplied to a multiple output replicator via an input propagation path. The initial bubbles are replicated into any desired number of new bubbles by a multiple output replicator. The input propagation paths for the several channels have different lengths of propagation times between the generator and the replicator. Input decoders are utilized to determine to which storage register the bubbles from the replicators will be directed along the propagation channel. Those bubbles not selected are, typically, annihilated.

Abstract: A large capacity bubble memory device using a basic major-minor loop storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be selectively transferred between cells in accordance with the status of switch elements. Control signals control the switch status. The cells include redundancy features so that cells can be interconnected to form a large capacity storage loop whereby chip yield is increased.

Abstract: A large capacity bubble memory device using a basic storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be transferred between cells. The cells include redundancy features so that the cells can be interconnected to form a large capacity storage loop.

Abstract: A probe for measuring the magnetic field in the plane of a magnetic device such as a magnetic bubble domain memory or the like. The probe includes a ferromagnetic, thin film element or pattern. A constant current source is connected to the ferromagnetic thin film element so that any resistance variation in the element can be sensed by measuring the voltage drop thereacross. When a magnetic field is applied in the plane of the probe, the domains in the ferromagnetic thin film element align along the direction of the magnetic field causing a magnetoresistance effect which the probe senses as a voltage change across the ferromagnetic thin film pattern. The planar magnetoresistance probe can be used to measure the amount of in-plane, d.c. field component of a perpendicularly applied bias field due to bias field misalignment. Moreover, the probe can be integrated within a magnetic device such as a magnetic bubble memory device.

Abstract: An on-chip bubble domain circuit organization. One or more storage registers are connected to a propagation path whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. The propagation path includes a generator for producing the initial bubbles which are expanded into any desired number of new bubbles by a unique multiple output replicator. A unique input decoder is utilized to determine to which storage register the bubbles from the replicator will be directed along the propagation path. Those bubbles not selected may be annihilated.An output decoder utilizing essentially the same decoding scheme as the input decoder, selectively receives bubbles from the storage register. A transfer and replicate switch is utilized between the storage register and output decoder to selectively transfer bubbles to the output decoder.

Abstract: There is described a simple first-in, first out (FIFO) magnetic bubble domain shift register which has continuous data storage capability. In a preferred embodiment, two parallel detector branches are associated with a main storage loop. The bubbles in the storage loop are replicated toward each detector branch by passive replicators in the storage loop. Annihilators associated with each of the replicators and each of the detectors are arranged an appropriate distance from the replicators so that selective energization of the annihilators permits certain bits to propagate to one detector and other bits to propagate to the other detector. Connection of the detectors in an appropriate bridge circuit permits full data rate reclamation.

Abstract: A magnetic memory organization for single wall magnetic domains comprising a primary domain propagation loop, secondary propagation loops which may be serially coupled to the primary loop for enlarging the capacity of the primary loop, and a conductor network for altering the magnetic properties of the loops to connect operative secondary loops in series with the primary loop and to bypass inoperative secondary loops.