Abstract: A device (20) for detecting a temperature on a surface (15) of an optical element (14) for semiconductor lithography. The device includes an optical element (14) having a face (16) irradiated with electromagnetic radiation (7, 8, 43), a temperature recording device (21), and a temperature controlled element (22) configured to be temperature-controlled and arranged so that the predominant proportion of the intensity of the thermal radiation (25.2) detected by the temperature recording device and reflected by reflection at the surface of the optical element is emitted by the temperature-controlled element. Also disclosed are an installation (1) for producing a surface (15) of an optical element (14) for semiconductor lithography and a method for producing a surface (15) of an optical element (14) of a projection exposure apparatus (30), wherein the surface is temperature-controlled and the surface temperature is detected during the temperature control.

Abstract: A projection exposure apparatus for semiconductor lithography comprises an optical element and a temperature recording device for detecting a temperature on a surface of the optical element via electromagnetic radiation emanating from the surface of the optical element. The temperature recording device can comprise a filter for filtering the electromagnetic radiation.

Abstract: Method for avoiding a degradation of an optical element, wherein the optical element is arranged in a housing, comprising: a) determining a first degradation value; b) determining a second degradation value, wherein the first degradation value and the second degradation value are determined at different times; c) forming a degradation profile based on the first degradation value and the second degradation value; d) calculating a temporal development of the degradation profile; e) determining at least one predicted degradation value based on the calculated temporal development of the degradation profile; f) comparing the at least one predicted degradation value with a predefinable first limit degradation value; g) monitoring for a predefinable first deviation between the at least one predicted degradation value and the first limit degradation value; h) feeding a first decontamination medium into the interior if attainment of the predefinable first deviation is identified.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of position sensors for determining the position of at least some of the optical elements. At least some of the position sensors are arranged on a measurement structure that is at least partially decoupled mechanically and/or thermally from the further components of the projection exposure apparatus. The measurement structure has at least two mechanically decoupled substructures. The first substructure has a lower coefficient of thermal expansion than the second substructure. The second substructure has a greater stiffness than the first substructure.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of position sensors for determining the position of at least some of the optical elements. At least some of the position sensors are arranged on a measurement structure that is at least partially decoupled mechanically and/or thermally from the further components of the projection exposure apparatus. The measurement structure has at least two mechanically decoupled substructures. The first substructure has a lower coefficient of thermal expansion than the second substructure. The second substructure has a greater stiffness than the first substructure.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.