Abstract: A lithography apparatus comprises a structural element, a sensor having a detection region for detecting a physical quantity in at least one detection direction with respect to the structural element, and a sensor receptacle for mounting the sensor to the structural element, wherein the sensor is arranged in such a way that the maximum displacement of the detection region in the detection direction relative to the structural element is not greater than the maximum displacement of the detection region in the detection direction in the case of an arrangement of the sensor orthogonally with respect thereto.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: In EUV lithography apparatuses (10), it is proposed, in order to lengthen the lifetime of contamination-sensitive components, to arrange them in a protection module. The protection module comprises a housing (23-29) having at least one opening (37-47), in which at least one component (13a, 13b, 15, 16, 18, 19) is arranged and at which one or more gas feeds (30-36) are provided in order to introduce a gas flow into the housing (23-29), which emerges through the at least one opening (37-47). In order to effectively prevent contaminating substances from penetrating into the protection module, a light source (48-56) is arranged at the at least one opening (37-47), which light source illuminates the opening (37-47) with one or more wavelengths by which the contaminating substances can be dissociated before they penetrate through the opening (37-47).

Abstract: A lithography apparatus comprises a structural element, a sensor having a detection region for detecting a physical quantity in at least one detection direction with respect to the structural element, and a sensor receptacle for mounting the sensor to the structural element, wherein the sensor is arranged in such a way that the maximum displacement of the detection region in the detection direction relative to the structural element is not greater than the maximum displacement of the detection region in the detection direction in the case of an arrangement of the sensor orthogonally with respect thereto.

Abstract: A temperature-control device is used for controlling the temperature of an optical assembly with at least one optical body, the temperature of which is to be controlled, with at least one optical surface which can be acted upon by a heat flow. The temperature-control device has a heat sink to receive a heat flow, which is emitted by the optical body or a transmission body which is in thermal connection with the optical body. The heat sink is arranged adjacent to a peripheral region of the optical surface. The temperature-control device has a heating mechanism with at least one heating body, which is arranged adjacent to the optical body. The heating body is connected via a physical heat bridge to the heat sink.

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: In EUV lithography apparatuses (10), it is proposed, in order to lengthen the lifetime of contamination-sensitive components, to arrange them in a protection module. The protection module comprises a housing (23-29) having at least one opening (37-47), in which at least one component (13a, 13b, 15, 16, 18, 19) is arranged and at which one or more gas feeds (30-36) are provided in order to introduce a gas flow into the housing (23-29), which emerges through the at least one opening (37-47). In order to effectively prevent contaminating substances from penetrating into the protection module, a light source (48-56) is arranged at the at least one opening (37-47), which light source illuminates the opening (37-47) with one or more wavelengths by which the contaminating substances can be dissociated before they penetrate through the opening (37-47).

Abstract: A temperature-control device is used for controlling the temperature of an optical assembly with at least one optical body, the temperature of which is to be controlled, with at least one optical surface which can be acted upon by a heat flow. The temperature-control device has a heat sink to receive a heat flow, which is emitted by the optical body or a transmission body which is in thermal connection with the optical body. The heat sink is arranged adjacent to a peripheral region of the optical surface. The temperature-control device has a heating mechanism with at least one heating body, which is arranged adjacent to the optical body. The heating body is connected via a physical heat bridge to the heat sink.

Abstract: A projection objective 1 for short wavelengths, in particular for wavelengths ?<157 nm is provided with a number of mirrors [M1, M2, M3, M4, M5 and M6] that are arranged positioned precisely in relation to an optical axis 5. The mirrors [M1, M2, M3, M4, M5 and M6] have multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

Abstract: There is provided an optical component. The optical component includes a material having a coefficient of thermal expansion ?, where the coefficient of thermal expansion is dependent on location. The following applies to the location-dependent coefficient of thermal expansion: ?= ?±??, with ?? being the maximum deviation of the coefficient of thermal expansion from the mean value of the coefficient of thermal expansion ? of the material. The following homogeneity condition applies to the material: ? ?? ? ? ( 0.14 + 0.1 · x + 390 x ) · ? _ Q . ?with the progress of the lacation-dependent progress of the coefficient of thermal expansion being periodical with a wavelength x given in mm, and the thermal output which is absorbed by the optical component being designated by Q given in watts (W), the resulting emissivity being designated by ?, and |??|in units of ppb K .

Abstract: There is provided an optical component. The optical component includes a material having a surface that heats to a maximum temperature (Tmax) when subjected to radiation. The material has a temperature-dependent coefficient of thermal expansion (?(T)) of about zero at a temperature T0 that is approximately equal to Tmax. The optical component is suitable for use in any of an illumination system, a projection objective or a projection exposure system, as employed, for example, for EUV microlithography.

Abstract: A projection objective 1 for short wavelengths, in particular for wavelengths ?<157 nm is provided with a number of mirrors M1, M2, M3, M4, M5 and M6 that are arranged positioned precisely in relation to an optical axis 5. The mirrors M1, M2, M3, M4, M5 and M6 have multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

Abstract: There is provided an optical component. The optical component includes a material having a surface that heats to a maximum temperature (Tmax) when subjected to radiation. The material has a temperature-dependent coefficient of thermal expansion (?(T)) of about zero at a temperature T0 that is approximately equal to Tmax. The optical component is suitable for use in any of an illumination system, a projection objective or a projection exposure system, as employed, for example, for EUV microlithography.

Abstract: The invention relates to an optical component comprising a material which has a coefficient of thermal expansion ?.