Abstract: A sheet for use in ground works, the sheet having an upper face with an plurality of openings therein, a lower face configured so as to permit liquid to drain through the sheet and a spacing arrangement to separate the upper face from the lower face and define a volume therebetween, where the volume is capable of receiving an infill material via the openings in the upper face. The lower face of the sheet is configured to be interengageably secured to an upper face of a similar further sheet.

Abstract: A sheet for use in ground works, the sheet having an upper face with an plurality of openings therein, a lower face configured so as to permit liquid to drain through the sheet and a spacing arrangement to separate the upper face from the lower face and define a volume therebetween, where the volume is capable of receiving an infill material via the openings in the upper face. The lower face of the sheet is configured to be interengageably secured to an upper face of a similar further sheet.

Abstract: A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

Abstract: A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

Abstract: Systems and methods for combined flow control and electricity generation are described. Various embodiments may include an energy recovery device adapted to produce an electric current. At least a portion of the electric current may be used to power a pump. A control system may be adapted to adjust operating parameters of the system to stabilize or maximize the efficiency of the energy recovery device.

Abstract: Systems and methods for combined flow control and electricity generation are described. Various embodiments may comprise an energy recovery device adapted to produce an electric current. At least a portion of the electric current may be used to power a pump. A control system may be adapted to adjust operating parameters of the system to stabilize or maximize the efficiency of the energy recovery device.

Abstract: A method of improving the adhesion of processing materials on a ceramic component is described. The method includes the steps of forming a green ceramic component and texturing the surface of the green ceramic component. The as-textured component is then fired to harden the ceramic material. In an alternative embodiment of the method, a coating is applied to the surface of the as-fired ceramic component to provide a secondary adhesion layer. A ceramic component for use in an etching or deposition reactor chamber is also described. The ceramic component includes a substrate formed of a ceramic material and has a textured surface formed thereon such that the textured surface has a roughness of about 100 to 1000 ?in Ra.

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract: Electrodes for a fluorine gas discharge laser are disclosed which may comprise a crown straddling the centerline axis between the pair of side walls and the pair of end walls, comprising a first material, forming at least a portion of the discharge region of the electrode; the crown in traverse cross section having the shape of the upper half of a canted ellipse rotated in the preionizer direction, such that a tangent to the short centerline axis of the ellipse forms an angle with the horizontal. Another embodiment may comprise an anode blade having a top portion and a first and second sidewall portion each intersecting the top portion; the anode blade being formed with the shape in cross section of the top portion being curvilinear and intersecting the generally straight potions of each of first and second sidewall portions along a radius of curvature and with the top portion beveled away from an asymmetric discharge side of the anode.

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract: A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic; a second tuning mechanism operative in part to select the angle of incidence of the laser light pu

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract: A method and apparatus if disclosed which may comprise a high power high repetition rate gas discharge laser UV light source which may comprise: a gas discharge chamber comprising an interior wall comprising a vertical wall and an adjacent bottom wall; a gas circulation fan creating a gas flow path adjacent the interior vertical wall and the adjacent bottom wall; an in-chamber dust trap positioned a region of low gas flow, which may be along an interior wall and may comprise at least one meshed screen, e.g., a plurality of meshed screens, which may comprise at least two different gauge meshed screens. The dust trap may extend along the bottom interior wall of the chamber and/or a vertical portion of the interior wall. The dust trap may comprise a first meshed screen having a first gauge; a second meshed screen having a second gauge smaller than the first gauge; and the second meshed screen intermediate the first meshed screen and the interior wall.

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract: A method and apparatus for operating a gas discharge laser is disclosed which may comprise a laser chamber containing a laser gas, the laser gas comprising a halogen, two elongated electrode elements defining a cathode and an anode, each of the cathode and anode having an elongated discharge receiving region having a discharge receiving region width defining a width of an electric discharge between the electrode elements in the laser gas, the discharge receiving region defining two longitudinal edges, and the anode comprising: a first elongated anode portion comprising a first anode material defining a first anode material erosion rate, located entirely within the discharge receiving region of the anode, a pair of second elongated anode portions comprising a second anode material defining a second anode material erosion rate, respectively located on each side of the first anode portion and at least partially within the discharge receiving region; an elongated electrode center base portion integral with the fi

Abstract: An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. The apparatus for planarizing a workpiece may include first and second polishing surfaces where the first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus may also have a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. An apparatus for planarizing a workpiece which includes a plurality of polishing stations is also disclosed.

Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.