Abstract: A modified dicyclopentadiene-based resin and a preparation method thereof are provided. The preparation method of the modified dicyclopentadiene-based resin includes sequentially performing nitration reaction and hydrogenation reaction of a dicyclopentadiene phenolic resin to form a modified dicyclopentadiene-based resin for which the structure has at least two amino groups. The hydrogenation reaction is performed in a solvent at a temperature of 50° C. to 120° C.

Abstract: A light-emitting device includes a semiconductor stack, an insulating reflective structure having an opening, and an electrode located on the insulating reflective structure and filled in the opening to electrically connect to the semiconductor stack. The semiconductor stack having includes a main surface, and a side surface inclined to the main surface. The light-emitting device has a dominant wavelength and a peak wavelength. The insulating reflective structure includes: a first part located on the main surface and having a first thickness; and a second part located on the side surface and having a second thickness different from the first thickness. The second part of the insulating reflective structure has a reflectivity of more than 90% for the dominant wavelength or the peak wavelength within an incident angle of 0° to 30°.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: Examples of light source distance alterations are described herein. An example device for providing light source distance alterations can include a display that includes a light source coupled to a piezo material to alter a distance between the light source and a corresponding aperture of an aperture layer.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A modified dicyclopentadiene-based resin is provided. The modified dicyclopentadiene-based resin is formed from a dicyclopentadiene-based resin having an amino group, a phenol and a polyoxymethylene by a cyclization reaction. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a S/D silicide layer formed on the S/D epitaxial layer, and the S/D silicide layer has a first width, the S/D epitaxial layer has a second width, and the first width is smaller than the second width. The semiconductor structure includes a dielectric spacer between the gate structure and the S/D silicide layer, and a top surface of the dielectric spacer is lower than a top surface of the gate structure.

Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.

Abstract: The present disclosure is drawn to covers for electronic devices. In one example, a substrate can include a metal alloy. An acid anodizing layer can be formed on the substrate. A dye application can be applied on the acid anodizing layer. A first nickel-free sealing layer can be formed on the dye application. An alkaline anodizing layer can be formed on the first sealing layer. A second nickel-free sealing layer can be formed on the alkaline anodizing layer.

Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: A projection lens includes a first lens group, a second lens group and an aperture stop. The first lens group is disposed between a reduced side and a magnified side. The second lens is disposed between the first lens group and the magnified side. The second lens group has a light incident surface, a reflective surface and a light emitting surface, the light incident surface faces the first lens group, the light emitting surface faces a projection surface, the light incident surface, the light emitting surface and the first lens group are disposed at a single side of the reflective surface, and at least one of the light incident surface, the reflective surface and the light emitting surface is a freeform surface. The aperture stop is disposed between the first lens group and the second lens group. Moreover, a projection apparatus including the projection lens is also provided.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A coated substrate for an electronic device can include a substrate, a basecoat layer on the substrate, and an anti-fingerprint topcoat layer on the basecoat layer. The substrate can include a metal or metal alloy. The basecoat layer can include pigment particles and a first one-part thermally cured polymeric resin. The anti-fingerprint topcoat layer can include a second one-part thermally cured polymeric resin and an anti-fingerprint material. The anti-fingerprint material can include a fluoropolymer, a silane, or a combination thereof. The basecoat layer can be cured before applying the anti-fingerprint topcoat layer on the basecoat layer.

Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: The present disclosure provides a forksheet structure in a semiconductor device and methods of manufacturing thereof. The forksheet structure according to the present disclosure includes a dielectric wall disposed between two channel regions inside a gate structure and without extending through the sidewall spacers to the source/drain regions. In some embodiments, a cut metal gate (CMG) dielectric structure is formed in the gate structure along with the dielectric walls. A gate dielectric layer is in contact with the dielectric wall. In some embodiments, the dielectric layer surrounds semiconductor channels in the channel region. In other embodiments, the gate dielectric layer surrounds a portion of the semiconductor channels in the channel region, for example forming a ?-shape cross sectional profile around the semiconductor channel.

Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A smart speaker includes an outer casing, a speaker module, and a microphone module is provided. The outer casing includes a first housing and a second housing assembled to each other. The speaker module is disposed in the first housing. The microphone module includes a circuit board and at least one microphone. The circuit board is assembled to the second housing and separated from the first housing. The microphone is disposed on the circuit board.