Abstract: The embodiment of the present disclosure provides a recovery device for oil spilling on water, a control method thereof, and a recovery vessel. The recovery device includes a casing, a control center, a variable pressure airbag, an oil detector, an isolation layer, a water suction pump, and a drain pipe. The casing is of a hollow structure, the hollow structure is used to accommodate an oil-water mixture and used as a temporary oil collection tank, the upper part of the casing is provided with an oil-water mixture inlet, the bottom of the casing is provided with a drain port, and the side wall of the casting is provided with an oil suction port. The variable pressure airbag is arranged outside the casing, and the variable pressure airbag is configured to adjust buoyancy of the recovery device. The water suction pump is configured to pump out water in the casing and discharge water to a water environment outside the casing through the drain pipe.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: The embodiments of the present disclosure provide a detachable anti-vibration sealing protection device for a pipe flange. The protection device includes a casing, wherein left and right end surfaces of the casing have through holes for the pipeline to pass through, and the casing has an accommodation cavity for placing the flange; a first shock absorption assembly for radial shock absorption of the flange; and a second shock absorption assembly which is installed in a one-to-one correspondence with the flange and is configured for axial shock absorption of the corresponding flange. The first shock absorption assembly and the second shock absorption assembly are installed in the accommodation cavity.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: In certain aspects, disclosed herein are methods of treating cancer in a subject, comprising administration to the subject of (1) one or more glucocorticoid receptor agonists and (2) one or more inhibitors of calcineurin. In some embodiments, the administration of the one or more glucocorticoid receptor agonists and the one or more inhibitors of calcineurin results in restoration of contact inhibition, increased formation of intercellular junctions, reduced cell proliferation, and/or increased vacuolization of cells growing in multilayer zones. Included herein are methods for identification of novel compounds that restore contact inhibition in cancer cells.

Abstract: The present disclosure discloses a novel strain of Glutamicibacter, derived from insects, which efficiently degrades bifenthrin, belonging to the field of microbial strains. The Glutamicibacter CCTCC NO: M20221445 of the present disclosure was isolated from the intestinal tract of bifenthrin-resistant Ectropis grisescens Warren larvae. It exhibits unique genomic characteristics, growth and phenotypic traits, physiological and biochemical characteristics, as well as the ability to utilize and degrade bifenthrin efficiently. Specifically, it can effectively degrade bifenthrin. Based on phenotypic features, physiological and biochemical characteristics, chemical composition, and molecular biology-based polyphasic classification, Glutamicibacter CCTCC NO: M20221445 is identified as a new species. This bacterium possesses the capability to efficiently degrade bifenthrin, laying the foundation for biological control of E. grisecens and offering new microbial resources to address pesticide residue problems.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: Low endotoxin fucan compositions comprising a therapeutically effective, medically acceptable fucan in a composition comprising less than about 0.2, 0.18, 0.1, 0.01, 0.001, or 0.0005 endotoxin units (EU) per milligram of the fucan are disclosed. Methods and systems for removing or reducing the amount of endotoxins from a starting fucan composition are also disclosed.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A behavior recognition device for recognizing behaviors of a semiconductor manufacturing apparatus includes a storage device and a control unit. The storage device is configured to store log data of the semiconductor manufacturing apparatus. The control unit is cooperatively connected to the storage device, and configured to build a transition state model based on the log data to analyze behaviors related to wafer transfer sequences and manufacturing operations of the semiconductor manufacturing apparatus.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A static auto-tuning system and method for controlling operation of a motor in a system. A speed reference signal is generated resulting in a speed response of the motor. Closed-loop feedback magnifies the rotating friction effect to an observable level. Inertia and rotating friction coefficient values of the system are estimated based on the speed frequency response and a virtual damping coefficient. A fixed low frequency speed signal may result in a first frequency response function for determining virtual damping, and a variable frequency excitation signal may result in a second frequency response function for determining the inertia and rotating friction characteristics. Closed-loop gains are determined based on these characteristics. The excitation signal may be sampled and a peak value in each interval may be identified and stored to produce an envelope of peak values for determining the gain response. Operation of the motor is controlled using the determined gains.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: A device includes an electrical circuit having a first set of circuit elements. The device further includes a first set of conductive pillars over a first side of a substrate. The device further includes a first conductive rail electrically connected to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail. The device further includes a first plurality of power pillars extending through the substrate, wherein each of the first plurality of power pillars is electrically connected to the first conductive rail.

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: The present disclosure pertains to techniques for reducing inaccuracies in context aware policies (CAP) with real-time feedforward validation in extended reality environments. In a particular aspect, a extended reality system is configured to author, by a user using the head-mounted device, a rule or policy or context aware policy (CAP) including one or more target actions and triggering context instances, capture, using one or more sensors, context history records for the user, render, by the head-mounted device, one or more validation scenes based on the rule or policy or CAP and the context history records, validate, by the user using the head-mounted device, the one or more validation scenes within an extended reality environment, and update, by the user using the head-mounted device, the rule or policy or CAP based on the validation.