Abstract: Embodiments of the present disclosure are directed to interconnects that include liquid metal, and associated techniques and configurations. The individual interconnects may electrically couple a contact of a printed circuit board (PCB) to a contact of a device under test (DUT). The interconnect may be disposed in or on the PCB. In various embodiments, the interconnect may include a carrier that defines a well (e.g., an opening in the carrier), and the liquid metal may be disposed in the well. In some embodiments, the contact of the DUT, or a contact of an intermediary device, may extend into the well and directly contact the liquid metal. In other embodiments, a flex circuit may be disposed over the well to seal the well. The flex circuit may include a conductive pad to electrically couple the liquid metal to the contact of the DUT. Other embodiments may be described and claimed.

Abstract: A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein components of the microelectronic packages may have magnetic attachment structures comprising a magnetic component and a metal component. The magnetic attachment structure may be exposed to a magnetic field, which, through the vibration of the magnetic component, can heat the magnetic attachment structure, and which when placed in contact with a solder material can reflow the solder material and attach microelectronic components of the microelectronic package.

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein components of the microelectronic packages may have magnetic attachment structures comprising a magnetic component and a metal component. The magnetic attachment structure may be exposed to a magnetic field, which, through the vibration of the magnetic component, can heat the magnetic attachment structure, and which when placed in contact with a solder material can reflow the solder material and attach microelectronic components of the microelectronic package.

Abstract: Provided are methods for the preparation of certain substituted pyrrolidine compounds, forms of (2S,4R)-1-(2-aminoacetyl)-4-benzamidopyrrolidine-2-carboxylic acid hydrochloride, and methods for preparing and using these forms.

Abstract: Embodiments of the invention provide methods for forming electrical connections using liquid metals. Electrical connections that employ liquid metals are useful for testing and validation of semiconductor devices. Electrical connections are formed between the probes of a testing interface and the electronic interface of a device under test through a liquid metal region. In embodiments of the invention, liquid metal interconnects are comprised of gallium or liquid metal alloys of gallium. The use of liquid metal contacts does not require a predetermined amount of force be applied in order to reliably make an electrical connection.

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein components of the microelectronic packages may have magnetic attachment structures comprising a magnetic component and a metal component. The magnetic attachment structure may be exposed to a magnetic field, which, through the vibration of the magnetic component, can heat the magnetic attachment structure, and which when placed in contact with a solder material can reflow the solder material and attach microelectronic components of the microelectronic package.

Abstract: Embodiments of the invention include apparatuses and methods relating to copper die bumps with electtomigration cap and plated solder. In one embodiment, an apparatus comprises an integrated circuit die, a plurality of copper bumps on a surface of the die, electromigration(EM) caps substantially covering a mating surface of the copper bumps capable of controlling intermetallic formation between the cooper bumps and solder, and solder plating on the EM caps capable of protecting the EM caps from oxidation prior to packaging.

Abstract: Provided are methods for the preparation of certain substituted pyrrolidine compounds, forms of (2S,4R)-1-(2-aminoacetyl)-4-benzamidopyrrolidine-2-carboxylic acid hydrochloride, and methods for preparing and using these forms.

Abstract: Embodiments of the invention include apparatuses and methods relating to copper die bumps with electromigration cap and plated solder. In one embodiment, an apparatus comprises an integrated circuit die, a plurality of copper bumps on a surface of the die, electromigration (EM) caps substantially covering a mating surface of the copper bumps capable of controlling intermetallic formation between the copper bumps and a solder, and solder plating on the EM caps capable of protecting the EM caps from oxidation prior to packaging.

Abstract: A hybrid electro-deposition process for soft magnetic cobalt alloy films comprises providing a plating bath that includes cobalt and a reducing agent, providing a cobalt-containing anode in the plating bath coupled to a power supply, providing a substrate in the plating bath coupled to the power supply, wherein the substrate functions as a cathode, applying a magnetic field across the plating bath, and applying an electrical current to the plating bath by way of the power supply to cause the cobalt to deposit onto the substrate and form a soft magnetic film.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.

Abstract: Provided are methods for the preparation of certain substituted pyrrolidine compounds, forms of (2S,4R)-1-(2-aminoacetyl)-4-benzamidopyrrolidine-2-carboxylic acid hydrochloride, and methods for preparing and using these forms.

Abstract: A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

Abstract: An iridium encased copper interconnect comprises an iridium liner formed within a trench in a dielectric layer, wherein the iridium liner is formed directly on the dielectric layer, a copper interconnect formed on the iridium liner, and an iridium capping layer formed on the copper interconnect. The iridium encased copper interconnect may be fabricated by providing a semiconductor substrate in a reactor, wherein the semiconductor substrate includes a trench etched into a dielectric layer, pulsing trimethylaluminum into the reactor proximate to the semiconductor substrate, pulsing an iridium precursor into the reactor proximate to the semiconductor substrate, wherein the trimethylaluminum enables an iridium species to deposit directly on the dielectric layer, depositing a copper seed layer on the iridium species layer using an electroless deposition process, and depositing a bulk copper layer on the copper seed layer using an electroplating process.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.

Abstract: Metal alloy barrier layers formed of a group VIII metal alloyed with boron (B) and/or phosphorous (P) and an at least one element from glyoxylic acid, such as carbon (C), hydrogen (H), or carbon and hydrogen (CH) formed by electoless plating are described. These barrier layers may be used as a barrier layer over copper bumps that are soldered to a tin-based solder in a die package. Such barrier layers may also be used as barrier layer liners within trenches in which copper interconnects or vias are formed and as capping layers over copper interconnects or vias to prevent the electromigration of copper.

Abstract: A controlled collapse chip connection (C4) comprises a copper metal C4 bump formed on an integrated circuit substrate, where the C4 bump includes a metal barrier cap to prevent electromigration of the copper metal. The barrier cap is formed from nickel or cobalt and it can either be formed on a top surface of the C4 bump or it can encapsulate the C4 bump. A method of forming the C4 bump with the barrier cap comprises providing an integrated circuit substrate, depositing a photoresist layer on a top surface of the integrated circuit substrate, exposing and developing the photoresist layer to form an opening, depositing copper metal into the opening to form a C4 bump, plating a metal barrier layer onto a surface of the C4 bump, and stripping the photoresist layer.

Abstract: Processes for using a compound of formula III: to make compounds of formulae I and II: and processes for making the compound of formula III, where R1-5 and J are as defined herein.

Abstract: A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.