Abstract: An apparatus for determining a characteristic of a photoluminescent (PL) layer comprises: a light source that generates an excitation light that includes light from the visible or near-visible spectrum; an optical assembly configured to direct the excitation light onto a PL layer; a detector that is configured to receive a PL emission generated by the PL layer in response to the excitation light interacting with the PL layer and generate a signal based on the PL emission; and a computing device coupled to the detector and configured to receive the signal from the detector and determine a characteristic of the PL layer based on the signal.

Abstract: Embodiments of the disclosure provide methods and system for inspecting and treating a substrate. In one embodiment, a method is provided including transmitting a first plurality of beams from a diffractive beam splitter to a first surface of a substrate to generate a reflection of a second plurality of beams, wherein the first plurality of beams are spaced apart from each other upon arriving at the first surface of the substrate; receiving the second plurality of beams on a recording surface of an optical device, wherein the second plurality of beams are spaced apart from each other upon arriving at the recording surface; measuring positional information of the second plurality of beams on the recording surface; comparing the positional information of the second plurality of beams to positional information stored in a memory; and storing a result of the comparison in the memory.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

Abstract: In some examples, portable electronic device sales, provisioning, and user care may include authenticating a user associated with a user portable electronic device. A user portable electronic device connector may be used to communicatively connect to a portable electronic device receptacle of the user portable electronic device, and transfer data and/or configurations associated with the user portable electronic device to a data storage. Options to purchase a new portable electronic device may be displayed. Selection of a new portable electronic device may be received from a display of at least one new portable electronic device, and the selected new portable electronic device may be configured by transferring, from the data storage, the data and/or the configurations associated with the user portable electronic device to the selected new portable electronic device.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: Embodiments of the disclosure provide a metrology system. In one example, a metrology system includes a laser source adapted to transmit a light beam, a lens adapted to receive at least a portion of the light beam from the laser source, a first beam splitter positioned to receive at least the portion of the light beam passing through the lens, a first beam displacing device adapted to cause a portion of the light beam received from the beam splitter to be split into two or more sub-light beams a first recording device having a detection surface, and a first polarizer that is positioned between the first displacing device and the first recording device, wherein the first polarizer is configured to cause the two or more sub-light beams provided from the first displacing device to form an interference pattern on the detection surface of the first recording device.

Abstract: An apparatus for determining a characteristic of a photoluminescent (PL) layer comprises: a light source that generates an excitation light that includes light from the visible or near-visible spectrum; an optical assembly configured to direct the excitation light onto a PL layer; a detector that is configured to receive a PL emission generated by the PL layer in response to the excitation light interacting with the PL layer and generate a signal based on the PL emission; and a computing device coupled to the detector and configured to receive the signal from the detector and determine a characteristic of the PL layer based on the signal.

Abstract: Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: Embodiments of the disclosure provide methods and system for inspecting and treating a substrate. In one embodiment, a method is provided including transmitting a first plurality of beams from a diffractive beam splitter to a first surface of a substrate to generate a reflection of a second plurality of beams, wherein the first plurality of beams are spaced apart from each other upon arriving at the first surface of the substrate; receiving the second plurality of beams on a recording surface of an optical device, wherein the second plurality of beams are spaced apart from each other upon arriving at the recording surface; measuring positional information of the second plurality of beams on the recording surface; comparing the positional information of the second plurality of beams to positional information stored in a memory; and storing a result of the comparison in the memory.

Abstract: A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.