Patents by Inventor Todd Egan
Todd Egan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9458537Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: September 29, 2015Date of Patent: October 4, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
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Patent number: 9443714Abstract: A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.Type: GrantFiled: March 5, 2013Date of Patent: September 13, 2016Assignee: APPLIED MATERIALS, INC.Inventors: James Matthew Holden, Song-Moon Suh, Todd Egan, Kalyanjit Ghosh, Leon Volfovski, Michael R. Rice, Richard Giljum
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Publication number: 20160211185Abstract: Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.Type: ApplicationFiled: January 15, 2015Publication date: July 21, 2016Applicant: APPLIED MATERIALS, INC.Inventors: Abraham Ravid, Todd Egan, Paul Connors, Sergey Starik, Ganesh Balasubramanian
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Publication number: 20160181134Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.Type: ApplicationFiled: August 28, 2015Publication date: June 23, 2016Inventors: Edward W. Budiarto, Majeed A. Foad, Ralf Hofmann, Thomas Nowak, Todd Egan, Mehdi Vaez-Iravani
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Publication number: 20160035577Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.Type: ApplicationFiled: March 11, 2014Publication date: February 4, 2016Inventors: Wei-Sheng LEI, Mohammad Kamruzzaman CHOWDHURY, Todd EGAN, Brad EATON, Madhava Rao YALAMANCHILI, Ajay KUMAR
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Patent number: 9252057Abstract: Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film.Type: GrantFiled: October 11, 2013Date of Patent: February 2, 2016Assignee: Applied Materials, Inc.Inventors: Mohammad Kamruzzaman Chowdhury, Wei-Sheng Lei, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Publication number: 20160017497Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 29, 2015Publication date: January 21, 2016Inventors: NAGARAJAN RAJAGOPALAN, Xinhai HAN, Michael TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
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Publication number: 20150376782Abstract: Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.Type: ApplicationFiled: August 28, 2014Publication date: December 31, 2015Inventors: Kevin Griffin, Abraham Ravid, Alex Minkovich, Somesh Khandelwal, Joseph Yudovsky, Todd Egan
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Patent number: 9177864Abstract: Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.Type: GrantFiled: September 5, 2014Date of Patent: November 3, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Aparna Iyer, Todd Egan, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 9157730Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: October 17, 2013Date of Patent: October 13, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20150226540Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: October 23, 2013Publication date: August 13, 2015Applicant: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20150217401Abstract: Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.Type: ApplicationFiled: April 10, 2015Publication date: August 6, 2015Inventors: James M. HOLDEN, Nir MERRY, Todd EGAN
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Publication number: 20150203966Abstract: Embodiments of the present disclosure enable measurement of film properties, such as thickness, using reflectometry regardless of the underlying pattern on the substrate or base layer because the amount of phase shift resulting from the growing film at any wavelength is independent of the substrate or base layer. One embodiment of the method includes determining properties of the substrate from a time series data. Another embodiment of the method includes removing a plasma background for measuring data by making two consecutive measurement with a light source on and off respectively. Another embodiment includes determining a deposition start time by monitoring a plasma marker or a phase shift of optical properties.Type: ApplicationFiled: January 12, 2015Publication date: July 23, 2015Inventors: Edward BUDIARTO, Thomas NOWAK, Todd EGAN, Sergey STARIK
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Patent number: 9048309Abstract: Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.Type: GrantFiled: June 13, 2013Date of Patent: June 2, 2015Assignee: Applied Materials, Inc.Inventors: Mohammad Kamruzzaman Chowdhury, Wei-Sheng Lei, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 9029242Abstract: Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.Type: GrantFiled: June 15, 2011Date of Patent: May 12, 2015Assignee: Applied Materials, Inc.Inventors: James M. Holden, Nir Merry, Todd Egan
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Publication number: 20150122419Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.Type: ApplicationFiled: January 12, 2015Publication date: May 7, 2015Inventors: Mohammad Kamruzzaman Chowdhury, Wei-Sheng Lei, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Publication number: 20150102467Abstract: Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Wei-Sheng Lei, Brad Eaton, Aparna Iyer, Saravjeet Singh, Todd Egan, Ajay Kumar, Seshadri Ramaswami
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Patent number: 8969177Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.Type: GrantFiled: June 13, 2013Date of Patent: March 3, 2015Assignee: Applied Materials, Inc.Inventors: Mohammad Kamruzzaman Chowdhury, Wei-Sheng Lei, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 8946057Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.Type: GrantFiled: March 20, 2013Date of Patent: February 3, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Mohammad K. Chowdhury, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 8940619Abstract: Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape.Type: GrantFiled: June 14, 2013Date of Patent: January 27, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Aparna Iyer, Saravjeet Singh, Todd Egan, Ajay Kumar, Seshadri Ramaswami