Abstract: A Thin Film Transistor (TFT) substrate includes a first semiconductor film, a first electrically conductive member provided in a layer higher than the first semiconductor film, an interlayer insulating film provided in a layer higher than the first electrically conductive member and including a first through hole, a second semiconductor film provided in a layer higher than the interlayer insulating film, a second electrically conductive member provided in a layer higher than the second semiconductor film, an organic insulating film provided in a layer higher than the second electrically conductive member and including a second through hole, and a third electrically conductive member provided in a layer higher than the organic insulating film. A contact hole extends through the first and the second through hole to the first electrically conductive member.

Abstract: A display area is provided with a plurality of first conductive layers formed of the same material and in the same layer as first electrodes. The first conductive layers are each positioned under a corresponding one of plurality of first photo spacers. A frame area is provided with a second conductive layer formed of the same material and in the same layer as the first electrodes. The second conductive layer includes a plurality of openings each formed under a corresponding one of a plurality of second photo spacers.

Abstract: An active matrix substrate including a resin substrate including a plurality of external connection terminals arranged near a display region, the active matrix substrate includes: a plurality of first lead wires each extending from one of the external connection terminals to the display region; and a plurality of second lead wires each extending from one of the external connection terminals to a separation line, the second lead wires being arranged with an arrangement pitch along the separation line, and the arrangement pitch of the second lead wires being greater than an arrangement pitch of the first lead wires.

Abstract: In a TFT layer provided on a base substrate, a first metal film, a first inorganic insulating film, a second metal film, a second inorganic insulating film, a third metal film, a first flattening film, a fourth metal film, and a second flattening film are sequentially layered. In a frame region, a slit is formed in the second flattening film to surround a display region, a first conductive layer formed by the fourth metal film is provided on the first flattening film exposed from the slit, and a TFT of a drive circuit is provided on the base substrate side of the first conductive layer to overlap with the first conductive layer.

Abstract: [Problem] To provide a composition for a black matrix which is a material suitable for manufacturing a black matrix, which is suitable for a high luminance display device structure and has high heat resistance and high light-shielding properties. [Means for Solution] The present invention uses a composition for a black matrix comprising: (I) a black colorant containing carbon black having a volume average particle diameter of 1 to 300 nm; (II) a siloxane polymer to be obtained by hydrolyzing and condensing a silane compound represented by a prescribed formula in the presence of an acidic or basic catalyst; (III) surface modified silica fine particles; (IV) a thermal base generator; and (V) a solvent.

Abstract: An active matrix substrate in which step-caused disconnection of a metal film in a contact hole does not easily occur includes a first to third insulating films and first to third metal films on a glass substrate and a contact hole electrically connecting the first and second metal film, the contact hole including first to third hole present respectively in the first to third insulating films, the first and third metal films being in contact with each other inside the first hole, the second insulating film and an oxide semiconductor film overlapping with each other in a region below the third hole, the second and third metal films being in contact with each other in a region above the first insulating film and either inside or below the third hole.

Abstract: A display device includes a resin substrate, a TFT layer, a light-emitting element, a frame region, a terminal portion, a bending portion, a plurality of frame wiring lines, and at least a one-layer inorganic film. The light-emitting element includes a metal electrode provided on a flattening film included in the TFT layer. In the bending portion, an opening is formed in at least the one-layer inorganic film. A frame flattening film is provided to fill the opening. The plurality of frame wiring lines are provided on the frame flattening film across the opening. The frame wiring line is formed of a metal material identical to the metal material of the metal electrode. The frame flattening film is formed of a resin material identical to the resin material of the flattening film.

Abstract: An active matrix substrate having low susceptibility to contact failure between two conductor films is provided. An oxide semiconductor film converted into a conductor is provided in a layer between a substrate and a first metal film. Within a contact hole, the oxide semiconductor film converted into a conductor is in contact with a second metal film. Outside of the contact hole, the oxide semiconductor film converted into a conductor is in contact with the first metal film.

Abstract: Frame wiring lines are provided in a frame region, a flattening film in which a frame-shaped slit is formed in the frame region is provided in the display region and the frame region, a plurality of first electrodes constituting light-emitting elements are provided on the flattening film, and conductive layer made of the same material and formed in the same layer as those of each of the plurality of first electrodes are provided covering at least end faces of the frame wiring lines exposed from the slit.

Abstract: The disclosure has an object to achieve a high level of height precision for spacers on a back plane. A display device includes: edge covers having a plurality of openings in which first electrodes are exposed; and a planarization film having first flat portions, second flat portions, and contact holes. The plurality of openings respectively overlap the first flat portions in a plan view. The second flat portions are located between the plurality of openings in a plan view. Each edge cover overlapping one of the first flat portions in a plan view has, on a second electrode side, a surface that has a first height from a bottom surface of the planarization film on a substrate side. Each second flat portion has, on the second electrode side, a surface that has a second height from the bottom surface. The first height is smaller than the second height.

Abstract: A slit has ends each close to one of a display area and a terminal. The ends are each formed of a stepwise side face, including etch stop films.

Abstract: In a display device, a second wiring line extends in a display region and includes an imaginary straight line that extends from the second wiring line in an extension direction of the second wiring line and intersects with an opening of an edge cover. The second wiring line extends along the peripheral edge of the opening without intersecting with the opening of the edge cover.

Abstract: In a display region, etching stopper layers are provided between a plurality of inorganic insulating films, openings are formed in the inorganic insulating films located closer to a light-emitting element than the etching stopper layers so as to expose the upper surfaces of the etching stopper layers, and flattening films are provided in the openings such that the openings are filed with the flattening films.

Abstract: A first conductive layer in the same layer as that of a first electrode is coupled to a third conductive layer and a second electrode in the same layer as that of a third metal layer through a slit formed in a flattening film of a non-display area. Second conductive layers in the same layer as that of a second metal layer are provided to overlap with the slit.

Abstract: In a display device, an inorganic insulating layer, a metal layer, a flattering film, a first electrode, an edge cover, a function layer, and a second electrode are formed, in that order, on a base substrate. The edge cover covers an edge of the first electrode and includes a first opening exposing the first electrode. The function layer is formed covering the first opening and an edge of the edge cover. The flattening film includes a first planar portion and a second planar portion having a film thickness smaller than that of the first planar portion, is configured to electrically connect the first electrode and the metal layer via a contact hole formed in the first planar portion, and overlaps the first opening of the edge cover at at least a portion of the second planar portion.

Abstract: In the display device according to the disclosure, a first bank includes a first bank lower portion in the same layer as a flattening film and a first bank upper portion in the same layer as an edge cover. A second bank includes a second bank lower portion in the same layer as the flattening film and a second bank upper portion in the same layer as the edge cover. The first bank upper portion covers an upper surface and a side surface of the first bank lower portion, the side surface being on a side close to a display region. An inclination angle of a side surface of the first bank upper portion on a side close to the display region is larger than an inclination angle of the side surface of the first bank lower portion on the side close to the display region.

Abstract: In a step of forming a plurality of control lines composed of a first metal layer a first metal layer branch line is formed. In a step of forming a plurality of power source lines composed of a second metal layer a second metal layer connecting portion is formed that connects each power source line with the first metal layer branch line via an opening of a first insulating film. In a step of forming a plurality of data signal lines composed of a third metal layer that is formed on a second insulating film the first metal layer branch line formed in the opening of the first insulating and the second metal layer connecting portion formed in an opening of the second insulating film are etched.

Abstract: The display device includes a non-display area. The non-display area includes: a slit formed in an edge cover; a first conductive layer formed in the same layer as an anode, and being in contact with a cathode; and a second conductive layer formed in the same layer as a capacitance electrode and provided to overlap the slit.

Abstract: Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500° C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

Abstract: A wiring line is provided on a TFT layer, in which the wiring line is formed in the same layer and formed of the same material as those of a reflection electrode. The reflection electrode includes a plurality of metallic conductive layers made up of a low resistance metallic material, an oxide-based lower transparent conductive layer provided on a lower surface side of a lowermost metallic conductive layer constituting a lowermost layer, an oxide-based upper transparent conductive layer having light reflectivity and provided on an upper surface side of an uppermost metallic conductive layer constituting an uppermost layer, and an oxide-based intermediate transparent conductive layer provided between the plurality of metallic conductive layers.