Abstract: A method of manufacturing a semiconductor device. First, a plurality of wires are arranged in parallel to one another, on a semiconductor substrate. Then, insulating films of a first group are formed on tops of the wires, respectively. Next, second insulating films of a second group are formed on sides of the wires, respectively. Further, among the wires there are formed insulating films of a third group which have upper surfaces located at a level not higher than upper surfaces of the insulating films of the second group. Thereafter, contact holes are formed by subjecting the insulating films of the third group to selectively etching. Finally, the contact holes are filled with electrically conductive material.

Abstract: A semiconductor memory device includes active regions arranged on a semiconductor substrate such that those of the active regions which are adjacent in the word line direction deviate in the bit line direction, MOS transistors respectively formed in the active regions and each having a source and a drain one of which is connected to the bit line, a plurality of trenches each arranged to another set of source an drain regions and arranged to deviate in the word line direction in the respective active regions, those of the trenches which are adjacent with a through word line disposed therebetween being arranged to deviate in the bit line direction so as to be set closer to each other, a plurality of storage electrodes respectively formed in the trenches with capacitor insulative films disposed therebetween, and connection electrodes arranged between the word lines and each connecting the other of the source and drain to the storage electrode.

Abstract: A semiconductor memory device includes a semiconductor substrate, an element isolation film formed on the substrate, element formation regions each defined in an island form in the surface of the substrate by the element isolation film, trenches formed in the element formation regions, respectively, capacitors each formed in a corresponding one of the trenches, each having a plate electrode formed of the substrate, a capacitor insulating film formed on the inner wall of the trench and a storage electrode filled in the trench with the capacitor insulating film disposed therebetween, transistors each formed in the element formation regions, and having a gate electrode which is formed to extend over the substrate and pass over the trench and the element formation region, a first impurity diffusion layer formed on one side of the gate electrode, a second impurity diffusion layer formed on the other side of the gate electrode, and channel regions formed on the element formation region on both sides of the trench b

Abstract: A method of manufacturing process of a semiconductor device, including the steps of forming a plurality of first trenches in a checkered configuration in a substrate, each of the first trenches having an opening; introducing a first conductivity type impurity from a surface of the substrate so as to form a first conductivity type well in a upper portion of the substrate; forming a capacitor insulating film on a surface of each of the first trenches and burying a storage electrode in each of the first trenches so as to form a trench capacitor in each of the first trenches; burying a first silicon film on each of the storage electrodes of the trench capacitors in the first trenches, etching back each of portions of the first silicon film and removing each of portions of the capacitor insulating films so as to expose portions of side surfaces of the first conductivity type well facing the first trenches; burying a second silicon film doped with a second conductivity type impurity in each of concave portions surr

Abstract: A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

Abstract: A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such as a DRAM using these transistors as switching transistors can be improved, and further a reliability of a gate oxide film in a transfer gate can be improved. More particularly, a narrow band gap semiconductor region such as Si.sub.x Ge.sub.1-x, Si.sub.x Sn.sub.1-x, PbS is formed in an interior of a source region or a drain region in the SOI.IG-device. By selecting location and/or mole fraction of the narrow band gap semiconductor region in a SOI film, or selecting a kind of impurity element to compensate the crystal lattice mismatching due to the narrow-bandgap semiconductor region, the generation of crystal defects can be suppressed.

Abstract: A dynamic semiconductor memory device according to the present invention, comprises a plurality of first bit lines, a plurality of second bit lines which are partially laminated above the first bit lines and, together with the first bit lines, form bit-line pairs to build a folded bit-line structure, a plurality of word lines arranged so as to cross the first bit lines and the second bit lines, and at least one memory cell array in which a plurality of memory cells connected to the first bit lines and the second bit lines are arranged in a matrix, wherein the memory cell array includes a plurality of first areas in which a plurality of memory cells are arranged, and a plurality of second memory areas which are arranged so as to alternate with the first areas and contain no memory cell, and the second memory areas include areas where the first bit lines of the specified number of the bit-line pairs are connected to the second bit lines and the second bit lines are connected to the first bit lines.

Abstract: A semiconductor memory device comprises a semiconductor substrate, a plurality of memory cells including a plurality of MOS transistors, each having a source, a drain and a gate, and a plurality of capacitors formed on the semiconductor substrate in a matrix manner, an interlayer insulating film formed on the memory cells and having a plurality of openings selectively formed, a plurality of plug electrodes formed in the openings of the interlayer insulating film, a plurality of bit lines, each bit line being connected to one of the source and the drain of each of the MOS transistors through a corresponding one of the plug electrodes, and a plurality word lines, each word line being the gate of each of the MOS transistors.

Abstract: A data transfer apparatus which includes data devices which access a common, shared memory. Each data device is connected to a corresponding data buffer. A memory bus is connected to each of the data buffers and to the shared memory to allow data to be transferred between the data buffers and between the data devices and the shared memory via the data buffers. Data is transferrable between a transferring data device to a receiving data device by transferring data from the transferring data device to the data buffer corresponding to the transferring data device, from the data buffer corresponding to the transferring data device to the memory bus, from the memory bus to the data buffer corresponding to the receiving data device, and then from the data buffer corresponding to the receiving data device to the receiving data device.

Abstract: A dynamic semiconductor memory device according to the present invention, comprises a plurality of first bit lines, a plurality of second bit lines which are partially laminated above the first bit lines and, together with the first bit lines, form bit-line pairs to build a folded bit-line structure, a plurality of word lines arranged so as to cross the first bit lines and the second bit lines, and at least one memory cell array in which a plurality of memory cells connected to the first bit lines and the second bit lines are arranged in a matrix, wherein the memory cell array includes a plurality of first areas in which a plurality of memory cells are arranged, and a plurality of second memory areas which are arranged so as to alternate with the first areas and contain no memory cell, and the second memory areas include areas where the first bit lines of the specified number of the bit-line pairs are connected to the second bit lines and the second bit lines are connected to the first bit lines.

Abstract: A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

Abstract: A semiconductor memory device includes at least one memory cell formed on a substrate. The memory cell is constructed by a hole capacitor and a vertical transistor. The hole capacitor is formed in a hole on the substrate. The vertical transistor is formed in a semiconductor column formed in position adjacent to the hole.

Abstract: In a DRAM having a structure in which a storage node electrode is formed via an insulator film in a trench formed in a memory cell region to thereby form a capacitor, and in which the storage node electrode is connected in the source/drain regions of a MOSFET through a storage node contact formed in a part of the insulator film, the trench is disposed so as to deviate widthwise in a channel region of the MOSFET, so that the distance between adjacent element regions is reduced without causing misalignment of masks used in the formation of the storage node contact, thereby to provide a miniaturized high-reliability DRAM. In addition, the storage node contact and the trench can be formed in large size.

Abstract: A motion analysis system utilizing an image processing technique includes a color marker attached to an object which is to be analyzed. Each color marker has a high directivity reflective member on a surface thereof, and the reflection member reflects light having a particular wavelength. A light source generates light for irradiation onto the color marker. A color TV camera aligned in roughly the same direction as that of the light source receives reflected light from the color marker and outputs a color image. A color extraction unit connected to the TV camera, extracts only a particular color from the color image produced by the TV camera. An area calculation unit connected to the color extraction unit, calculates the area of the particular color extracted by the color extraction unit.

Abstract: A display section displays an image to be displayed on a screen. An image processing section detects an opening/closing of an operator's eyelids on the basis of an image of the operator's face. A display controlling section changes the video data displayed on the display screen through a display section on the basis of the eyelid opening/closing state detected by the image processing section in accordance with a timing at which the operator does not look at the display screen.

Abstract: A semiconductor device of this invention includes a semiconductor substrate, at least one memory cell section including a number of memory cells each formed of a capacitor and a MOS transistor formed on the semiconductor substrate, a peripheral circuit section formed on the semiconductor substrate in an area other than an area in which the memory cell section is formed, and a wiring layer serving as an upper electrode of the capacitor and serving as a wire of the peripheral circuit section.

Abstract: In a coding apparatus, a first detecting device serves to detect a variation between conditions of pixels in a currently-coded line. A second detecting device serves to detect a variation between conditions of pixels in a reference line which immediately precedes the currently-coded line. A deciding device serves to decide a mode of MR coding in accordance with the variations detected by the first and second detecting devices. The first and second detecting devices and the deciding device are enabled to execute functions thereof in temporally parallel with each other.

Abstract: The invention provides a method of forming a coating film by forming in sequence a pigmented base coat and a clear top coat on a substrate followed by finishing by the two-coat one-bake technique, the method being characterized by using, as a coating composition for pigmented base coat formation, a composition comprising, as essential components thereof,(1) an OH-containing resin,(2) an amino resin,(3) a polyorganosiloxane which has, on an average, at least two groups, per molecule, each selected from the class consisting of a silanol group and an alkoxysilane group and has a number average molecular weight of at least 1,000,(4) a metal chelate compound(5) a flaky metal powder and/or a mica powder, and(6) an organic solvent,and using, as a coating composition for clear top coat formation, a composition comprising, as essential components thereof,(1) an OH- and epoxy-containing base resin which further contains at least one group selected from the group consisting of a silanol group and a hydrolyzable group bo

Abstract: An image data encoding/decoding apparatus having an encoder and decoder for processing image data such as facsimile data, in which two different streams of image data can be encoded concurrently by using a single encoding circuit section, and two different streams of encoded data can be decoded concurrently using a single decoding section. The encoded data obtained for each scan line portion of the image data are modified, if necessary, to be converted to an integral number of fixed-size amounts of data such as bytes, for subsequent storage in memory. During decoding processing, the encoded data line portions are restored to their respective original forms prior to decoding processing, by controlled operation of registers in which the encoded data are temporarily written in and then serially read out.

Abstract: A data encoding apparatus, applicable for example to a facsimile apparatus, increases the degree of image data compression that can be achieved by a variable length encoding scheme, by limiting the maximum amount of data outputted from the encoding apparatus for each scan line to the amount of unencoded image data in a scan line. Generation of increased amounts of data in the case of certain types of image content, as a result of the variable length encoding, is thereby eliminated with a consequent increase in encoding efficiency.