Abstract: This sample holder for a scanning probe microscope is constituted of (1) a container that retains a liquid and (2) a flat-plate-shaped upper cover that covers an upper opening of the container and that has a narrow slit above the position where a sample is placed. In the upper cover, the slit has a slit width with which a thin film of the liquid is formed over the upper surface of the sample when the liquid fills the space between the container and the upper cover. The thin film of the liquid has a film thickness smaller than the distance between the upper surface of the sample and the upper cover.

Abstract: Sample transferring can be securely and easily performed between an FIB device, an electron microscope, and an atom probe device, and atom probe analysis can be performed to a material that easily alters due to atmospheric exposure. A sample holder that holds a sample (12) is provided with an atmosphere-isolation mechanism that prevents the sample from altering due to the atmospheric exposure upon the sample transferring between the devices. There is provided a structure enabling of attaching and detaching a housing (21) of a sample holder leading end of a part of the atmosphere-isolation mechanism in an analytical vacuum device, such as the atom probe device.

Abstract: This sample holder for a scanning probe microscope is constituted of (1) a container that retains a liquid and (2) a flat-plate-shaped upper cover that covers an upper opening of the container and that has a narrow slit above the position where a sample is placed. In the upper cover, the slit has a slit width with which a thin film of the liquid is formed over the upper surface of the sample when the liquid fills the space between the container and the upper cover. The thin film of the liquid has a film thickness smaller than the distance between the upper surface of the sample and the upper cover.

Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Abstract: Sample transferring can be securely and easily performed between an FIB device, an electron microscope, and an atom probe device, and atom probe analysis can be performed to a material that easily alters due to atmospheric exposure. A sample holder that holds a sample (12) is provided with an atmosphere-isolation mechanism that prevents the sample from altering due to the atmospheric exposure upon the sample transferring between the devices. There is provided a structure enabling of attaching and detaching a housing (21) of a sample holder leading end of a part of the atmosphere-isolation mechanism in an analytical vacuum device, such as the atom probe device.

Abstract: Provided is a scanning probe microscope that takes measurements at high spatial resolution on physical information such as array structure of water molecules at a specimen-culture fluid interface in a culture fluid as well as irregularities of the surface of a specimen and composition distribution and array structure of molecules, proteins, etc. even in the atmosphere, an ambient air, vacuum, among others. The scanning probe microscope includes: a probing needle (1); a specimen holder (11) in which a specimen (3) is mounted; an oscillator (2) that produces a periodic oscillation to change the probing needle position; a pulse oscillation type laser light source (27, 28) that emits light toward a spot, which is put under measurement by the probing needle, on the specimen; a detector (25) that measures intensity of output light which is output from the specimen by energy spectroscopy; and a control device (26).

Abstract: At the time of carrying out measurement of a biological tissue with a probe microscope, measurement is to be realized while maintain survival conditions for a cell. As a holder for the probe microscope, a measurement holder including: a container in which a measurement object is housed; a first cover section which covers at least a part of the measurement object and has an aperture for inserting a measurement probe; and a second cover section which is connected to the first cover section, covers the container, and has an aperture for inserting the measurement probe, is used.

Abstract: Provided is a scanning probe microscope that takes measurements at high spatial resolution on physical information such as array structure of water molecules at a specimen-culture fluid interface in a culture fluid as well as irregularities of the surface of a specimen and composition distribution and array structure of molecules, proteins, etc. even in the atmosphere, an ambient air, vacuum, among others. The scanning probe microscope includes: a probing needle (1); a specimen holder (11) in which a specimen (3) is mounted; an oscillator (2) that produces a periodic oscillation to change the probing needle position; a pulse oscillation type laser light source (27, 28) that emits light toward a spot, which is put under measurement by the probing needle, on the specimen; a detector (25) that measures intensity of output light which is output from the specimen by energy spectroscopy; and a control device (26).

Abstract: To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Abstract: Provided is a measuring apparatus which is capable of measuring the distribution of a specific element in a specimen by soft X rays in a state where there is no effect by a staining agent and the like even though the specimen is composed of living single cells or cell aggregates living as they are, extracted in vitro from an organism. A measuring apparatus using soft X rays includes a connection part which is connected with a soft X ray beam line, a mechanism which light-collects a spot size of soft X rays into a micro beam, and a low vacuum vessel having a measurement chamber in which a specimen is disposed.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Abstract: The present invention provides a neural activity measurement system for measuring the electrical response of a neuron itself to achieve an electrical measurement of the neural activity itself, by providing a stimulator for applying an electrical stimulus to the neuron, as well as a Kelvin probe including a cantilever for detecting the electrical signal propagated through the neuron.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.

Abstract: An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

Abstract: An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

Abstract: To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.

Abstract: A method of coating by supplying a liquid material from a nozzle tip to form a film on a substrate surface facing to the nozzle, having the steps of: preparing a translation mechanism, which is capable of moving the nozzle in an in-plane direction and in a thickness direction of the substrate; making the nozzle to come gradually closer to the substrate, after positioning of the nozzle on the in-plane of the substrate, by using the translation mechanism; detecting electric current flowing through the nozzle from the substrate surface, when a semiconductor droplet supplied from the nozzle tip contacts with an electrode installed at the substrate surface; stopping accession of the nozzle to the substrate, when the electric current exceeds threshold value set in advance; and making the nozzle tip apart from the substrate farther than in the stopping, so as to coat the substrate with the liquid material.