Abstract: Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a high-density magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a non-uniform electrical field to induce a first ferromagnetic domain, a nonmagnetic domain and a second ferromagnetic domain.

Abstract: In place of a magnetic field in which it is difficult to write onto and read a hard disk at high density, there is provided an information storage apparatus capable of writing and reading by means of a metal probe which applies a voltage to a thin film structure in a non contact manner to change the relative magnetization direction in the thin film layers to store information. Changes in a tunnel current between the thin film layers is then used to detect the relative magnetization direction and to read the stored information. At least a three-layer thin film structure including a magnetic metallic layer, a non-magnetic metallic layer and a magnetic metallic layer may be formed. A metal probe is brought close to the surface of this multilayer film at distance on the order of one nanometer.

Abstract: Disclosed is a magnetoresistance device which uses a ferromagnetic tunnel junction formed by inserting an insulating layer between two ferromagnetic layers and whose application to a magnetic head and a magnetoresistance memory is promising. The magnetoresistance device has a multilayer structure which has a ferromagnetic tunnel junction formed by lamination of a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, and in which at least one of the first and second ferromagnetic layers is a half-metallic ferromagnet formed of a material having such an electronic structure that one spin having a metallic band near Fermi energy has a gap at a level of higher energy than the Fermi energy and the other spin has a metallic band at the same level.

Abstract: A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

Abstract: Current passed through a resist layer or insulating layer is controlled by changing the amplitude of an AC voltage to provide an electron exposure device or electric characteristics evaluation device using a scanning probe.

Abstract: A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

Abstract: Current passed through a resist layer or insulating layer is controlled by changing the amplitude of an AC voltage to provide an electron exposure device or electric characteristics evaluation device using a scanning probe.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: To provide an electron exposure apparatus capable of providing high resolution and performing electron exposure at high speed, integrated tips are used, only the tips provided at ends control distances between the tips and the surface of a wafer and the tips used for electron exposure follow the wafer according to deformations of cantilevers, which occur due to the Coulomb force resultant from a voltage applied to each tip.

Abstract: To provide an electron exposure apparatus capable of providing high resolution and performing electron exposure at high speed, integrated tips are used. Only the tips provided at ends control distances between the tips and the surface of a wafer, and the tips used for electron exposure follow the wafer according to deformations of cantilevers, which occur due to the Coulomb force resultant from a voltage applied to each tip.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.

Abstract: A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules to the surface of substance made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.

Abstract: A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules at the surface of a substrate made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.

Abstract: A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.