Abstract: It is an object to provide a method of manufacturing a semiconductor device capable of forming a MOS transistor of high performance, comprising the steps of forming a gate electrode on a semiconductor substrate via a gate-insulating film (step S1), introducing a impurity into the semiconductor substrate using the gate electrode as a mask (step S7), introducing a diffusion-suppressing substance into the semiconductor substrate to suppress the diffusion of the impurity (step S8), forming a side wall-insulating film on each side surface of the gate electrode (step S9), deeply introducing impurity into the semiconductor substrate using the gate electrode and the side wall-insulating film as masks (step S10), activating the impurity by the annealing treatment using a rapid thermal annealing method (step S11), and further activating the impurity by the millisecond annealing treatment (step S12).

Abstract: A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: The present invention provides a gas introduction pipe in which the least component is replaced when deformation or damage is caused and a magnetic recording medium production method using this gas introduction pipe. The gas introduction pipe according to the present invention includes: a gas supply pipe 20 for supplying a gas; a main body 22, 23 connected to the gas supply pipe and having a gas flow passage 21 for flowing of a gas supplied from the gas supply pipe; and a blowoff block 25 arranged at the opposite side of the main body 22, 23 not having the gas supply pipe and having a blowoff opening 27 exposed outward for blowing off the gas outside. The blowoff block 25 is held so as to be sandwiched by the main body 22, 23 and can be detached and attached from/to the main body 22, 23.

Abstract: The present invention provides a gas introduction pipe in which the least component is replaced when deformation or damage is caused and a magnetic recording medium production method using this gas introduction pipe. The gas introduction pipe according to the present invention includes: a gas supply pipe 20 for supplying a gas; a main body 22, 23 connected to the gas supply pipe and having a gas flow passage 21 for flowing of a gas supplied from the gas supply pipe; and a blowoff block 25 arranged at the opposite side of the main body 22, 23 not having the gas supply pipe and having a blowoff opening 27 exposed outward for blowing off the gas outside. The blowoff block 25 is held so as to be sandwiched by the main body 22, 23 and can be detached and attached from/to the main body 22, 23.