Abstract: Provided is a double-sided polishing method of a wafer in which the wafer, which has been set in a wafer loading hole of the carrier, is compressed and held along with the carrier with an upper platen and a lower platen and the upper platen and the lower platen are rotated while supplying slurry to the wafer. The method includes: previously measuring an inclination value of a main surface of each of a plurality of carriers in the vicinity of the edge of the wafer loading hole; selecting, from among the plurality of carriers, those for which the inclination value is equal to or smaller than a threshold based on the measurement results of the inclination value; and applying the double-sided polishing to a wafer using the selected carrier.

Abstract: A first virtual rotational axis exists at a position separated from the position of a first virtual line which passes through a path through which the cancel lever is advanced and retracted (in the longitudinal direction of an elongated guide hole). A first engaging portion of the cancel lever is line symmetric about a second virtual line which connects the first virtual rotational axis of a cancel cam member and a second virtual rotational axis of the cancel lever.

Abstract: Provided is a hydrogen generating apparatus adaptable to fluctuating hydrogen demand, particularly by enabling large-scale hydrogen production, generating pure hydrogen at a high yield. The hydrogen generating apparatus 1 includes a tabular dielectric body 2 having a first surface 11 with a source gas flow channel 13 formed as a recess and a second surface 12 approximately parallel to the first surface 11, a grounding electrode 3, a hydrogen flow channel plate 4 with a hydrogen flow channel 18 and a hydrogen outlet 19, being arranged on a first surface 11 side of dielectric body 2, a hydrogen separation membrane 5 between source gas flow channel 13 and hydrogen flow channel 18, and a high-voltage power supply 6 that causes electric discharge in source gas flow channel 13 between hydrogen separation membrane 5 and grounding electrode 3. Hydrogen separation membrane 5 transmits hydrogen generated by electric discharge in source gas flow channel 13 into hydrogen flow channel 18.

Abstract: To provide a hydrogen generating apparatus that efficiently generates hydrogen from ammonia, and a fuel cell system that generates power using the efficiently generated hydrogen. [Solution] A hydrogen generating apparatus (1) is provided with a plasma reactor (3), a high-voltage electrode (5), a grounding electrode (7), and a gas supply means (15) that supplies a gas containing ammonia to the plasma reactor. The high-voltage electrode (5) is configured with a hydrogen separation membrane (12) included therein. Under the conditions of room temperature and atmospheric pressure, the hydrogen separation membrane (12) of the high-voltage electrode (5) discharges electricity between the grounding electrode (7) and the hydrogen separation membrane with power supplied from a high-voltage pulse power supply (2), and hydrogen is generated by bringing into the plasma state the ammonia contained in the gas thus supplied.

Abstract: A denitration device and a denitration method in which denitration is performed efficiently and in a stable manner in a lower-reaction-temperature region without using a catalyst. The denitration device is provided with a combustion chamber, a denitration agent feed means for feeding a denitration agent into the combustion chamber, an exhaust pipe, and an OH-radical-generating substance feed means for feeding an OH radical-generating substance into the exhaust pipe. The denitration agent feed means feeds a denitration agent into the exhaust gas of the combustion chamber to perform a first denitration reaction step, and the OH-radical-generating substance feed means feeds the OH-radical-generating substance into the exhaust gas in the exhaust pipe to perform a second denitration reaction step.

Abstract: An energy carrier system is provided that produces ammonia with high efficiency and that further produces hydrogen as final product and uses the hydrogen as energy. An energy storage transportation method is further provided that is carried out by using energy carrier system. The energy carrier system includes nitric acid production device, an ammonia production device, and hydrogen production device. The nitric acid production device includes a photo-reactor, a gas supply unit that supplies photo-reactor with gas to be treated containing a nitrogen oxide, water, and oxygen, and light source disposed in the photo-reactor. The light source radiates light including ultraviolet of a wavelength shorter than 175 nm. The energy storage transportation method includes nitric acid production step of producing nitric acid from a nitrogen oxide, ammonia production step of producing ammonia through reduction of nitric acid, and hydrogen production step of producing hydrogen through decomposition of the ammonia.

Abstract: A first virtual rotational axis exists at a position separated from the position of a first virtual line which passes through a path through which the cancel lever is advanced and retracted (in the longitudinal direction of an elongated guide hole). A first engaging portion of the cancel lever is line symmetric about a second virtual line which connects the first virtual rotational axis of a cancel cam member and a second virtual rotational axis of the cancel lever.

Abstract: To apply a denitration device and a denitration method in which denitration is performed efficiently and in a stable manner in a lower-reaction-temperature region without using a catalyst. The denitration device (100) is provided with a combustion chamber (1), a denitration agent feed means (11) for feeding a denitration agent into the combustion chamber (1), an exhaust pipe (2), and an OH-radical-generating substance feed means (21) for feeding an OH-radical-generating substance into the exhaust pipe (2). The denitration agent feed means (11) feeds a denitration agent into the exhaust gas of the combustion chamber to perform a first denitration reaction step, and the OH-radical-generating substance feed means (21) feeds the OH-radical-generating substance into the exhaust gas in the exhaust pipe (2) to perform a second denitration reaction step.

Abstract: A double-side polishing apparatus for a work according to the present invention includes one or more work thickness measuring devices and a control unit. The double-side polishing method for a work includes the steps of: first polishing for polishing both surfaces of the work; first measurement for measuring the thickness of the work; in the first measurement step, when the thickness of the work is found to reach the predetermined thickness, terminating the orbital motion of the carrier plate; second polishing both surfaces of the work while the carrier plate performs only rotational motion; second measurement for measuring the thickness of the work at predetermined position(s); and determining a time for terminating polishing based on the result of the measurement of the thickness of the work in the second measurement step.

Abstract: A device for applying a high voltage using a pulse voltage is provided which applies a high voltage having a pulse width ?0 to a capacitive load (1) through a pulse transformer (4), the high voltage having pulse-like peaks with a steep leading edge, wherein a capacitance C1 of the capacitive load (1) and a secondary side leakage inductance L1 of the pulse transformer (4) satisfy the equation: L1=(?0/?)2×(1/C1). This enables enlargement of the pulse-like peaks and application of any pulse repetition frequency when the high voltage having the pulse-like peaks is applied to the capacitive load through the pulse transformer.

Abstract: To provide a hydrogen generating apparatus that efficiently generates hydrogen from ammonia, and a fuel cell system that generates power using the efficiently generated hydrogen. [Solution] A hydrogen generating apparatus (1) is provided with a plasma reactor (3), a high-voltage electrode (5), a grounding electrode (7), and a gas supply means (15) that supplies a gas containing ammonia to the plasma reactor. The high-voltage electrode (5) is configured with a hydrogen separation membrane (12) included therein. Under the conditions of room temperature and atmospheric pressure, the hydrogen separation membrane (12) of the high-voltage electrode (5) discharges electricity between the grounding electrode (7) and the hydrogen separation membrane with power supplied from a high-voltage pulse power supply (2), and hydrogen is generated by bringing into the plasma state the ammonia contained in the gas thus supplied.

Abstract: The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.

Abstract: A double-side polishing apparatus for a work according to the present invention includes one or more work thickness measuring devices and a control unit. The double-side polishing method for a work includes the steps of: first polishing for polishing both surfaces of the work; first measurement for measuring the thickness of the work; in the first measurement step, when the thickness of the work is found to reach the predetermined thickness, terminating the orbital motion of the carrier plate; second polishing both surfaces of the work while the carrier plate performs only rotational motion; second measurement for measuring the thickness of the work at predetermined position(s); and determining a time for terminating polishing based on the result of the measurement of the thickness of the work in the second measurement step.

Abstract: To propose a method for realizing appropriate delivering of works to carriers in the conventional transfer process. Specifically, in a polishing method for polishing a work retained in a carrier, at least one carrier for retaining a work to be polished is placed between an upper plate and a lower plate; the work is fit in a hole of the carrier; the carrier and the work are inserted between the upper plate and the lower plate; and at least one of the upper plate and the lower plate is rotated while supplying a polishing agent to a space between the upper plate and the lower plate. In fitting the work in the hole of the carrier, an end portion of the work is held and the work is carried to a position above the lower plate; the work is positioned with respect to the hole of the carrier on the lower plate; and the work is released from the hold and guided by a guide to be slowly carried down toward the hole.

Abstract: Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.

Abstract: The present invention provides an apparatus capable of uniformly grinding an polishing pad. Further, the present invention provides a method of grinding an polishing pad by using the grinding apparatus.

Abstract: The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten.

Abstract: A device for applying a high voltage using a pulse voltage is provided which applies a high voltage having a pulse width ?0 to a capacitive load (1) through a pulse transformer (4), the high voltage having pulse-like peaks with a steep leading edge, wherein a capacitance C1 of the capacitive load (1) and a secondary side leakage inductance L1 of the pulse transformer (4) satisfy the equation: L1=(?0/?)2×(1/C1). This enables enlargement of the pulse-like peaks and application of any pulse repetition frequency when the high voltage having the pulse-like peaks is applied to the capacitive load through the pulse transformer.

Abstract: To propose a method for realizing appropriate delivering of works to carriers in the conventional transfer process. Specifically, in a polishing method for polishing a work retained in a carrier, at least one carrier for retaining a work to be polished is placed between an upper plate and a lower plate; the work is fit in a hole of the carrier; the carrier and the work are inserted between the upper plate and the lower plate; and at least one of the upper plate and the lower plate is rotated while supplying a polishing agent to a space between the upper plate and the lower plate. In fitting the work in the hole of the carrier, an end portion of the work is held and the work is carried to a position above the lower plate; the work is positioned with respect to the hole of the carrier on the lower plate; and the work is released from the hold and guided by a guide to be slowly carried down toward the hole.

Abstract: The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.