Abstract: A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body.

Abstract: In a method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate to a first principal surface, on which the first structure is formed, of the first substrate. The supporting substrate is higher in rigidity than the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The third substrate is removed from the second bonded body.

Abstract: In one embodiment, a semiconductor device includes a first substrate, a first insulator provided on the first substrate, a first pad provided in the first insulator, a second insulator provided on the first insulator, and a second pad provided in the second insulator, disposed on the first pad, and being in contact with the first pad. The device further includes a third pad provided in the second insulator, and disposed above the second pad, a third insulator provided on the second insulator, and a fourth pad provided in the third insulator, disposed on the third pad, and being in contact with the third pad. Furthermore, a shape of the third or fourth pad is different from a shape of the first or second pad.

Abstract: A semiconductor storage device includes a first layer including a first surface and a second surface located opposite to the first surface. The first layer includes a first memory cell array and a first wire layer, the first memory cell array being provided between the first surface and the second surface and including a plurality of first memory cells, and the first wire layer facing the first surface and being electrically connected to the first memory cells. A second layer includes a third surface and a fourth surface located opposite to the third surface. The second layer includes a second memory cell array provided between the third surface and the fourth surface to be electrically connected to the first wire layer and including a plurality of second memory cells. The first layer and the second layer are joined together on the first surface and the third surface.

Abstract: A semiconductor storage device according to an embodiment includes a plurality of memory cell array layers. Each of the plurality of the memory cell array layers includes a plurality of memory cells. Each of the plurality of the memory cells includes a multi-layered body. The multi-layered body has a staircase structure including an inclined portion. The multi-layered body has a plurality of electrode layers having a plurality of end portions. The positions of the plurality of the end portions are displaced from each other for each stacked position in the staircase structure. Two memory cell array layers adjacent to each other have a multi-layered boundary surface therebetween. The inclined portion of each of the two memory cell array layers adjacent to each other faces the multi-layered boundary surface.

Abstract: According to one embodiment, in a semiconductor device, a first film is arranged on a side of a main surface of the substrate. A second film is arranged on an opposite side of the substrate with the first film interposed therebetween. A main surface of the second film is in contact with a main surface of the first film. A third film is arranged on an opposite side of the first film with the second film interposed therebetween. A main surface on a side of the substrate of the third film has two-dimensionally-distributed protrusions or recesses. A main surface on an opposite side of the substrate of the third film is flat. Absorptance of infrared light of the second film is higher than absorptance of the infrared light of the third film. Thermal expansion coefficient of the third film is different from thermal expansion coefficient of the second film.

Abstract: According to one embodiment, provided is a coating apparatus. The coating apparatus includes a first discharger, a second discharger, and a third discharger. The first discharger discharges a first liquid on a top surface of a substrate. In addition, the second discharger discharges a second liquid of which surface tension is higher than surface tension of the first liquid on the top surface of the substrate. In addition, the third discharger is disposed in a side outer than the first discharger in the substrate and discharges a gas on the top surface of the substrate.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: According to one embodiment, provided is a coating apparatus. The coating apparatus includes a first discharger, a second discharger, and a third discharger. The first discharger discharges a first liquid on a top surface of a substrate. In addition, the second discharger discharges a second liquid of which surface tension is higher than surface tension of the first liquid on the top surface of the substrate. In addition, the third discharger is disposed in a side outer than the first discharger in the substrate and discharges a gas on the top surface of the substrate.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: According to one embodiment, a developing apparatus and method comprises moving a first nozzle from a scan start position to a scan end position, with holding a second nozzle for supplying a rinse solution to be adjacent to the scan start position for the first nozzle, while supplying a developing solution from the first nozzle onto a wafer being rotated; and supplying the rinse solution from the second nozzle onto the wafer being rotated.

Abstract: According to one embodiment, a substrate processing device includes a nozzle that discharges chemical to a circumferential edge portion of a substrate; and a rotation processing unit that rotates the substrate. The substrate processing device also includes a determination unit and a rotation number control unit. The determination unit determines whether or not a discharging position of the chemical by the nozzle arrived at an outer circumferential portion of the substrate from a position on an outer side of the substrate. The rotation number control unit controls a rotation number of the substrate based on a determination result by the determination unit.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: According to one embodiment, a developing apparatus and method comprises moving a first nozzle from a scan start position to a scan end position, with holding a second nozzle for supplying a rinse solution to be adjacent to the scan start position for the first nozzle, while supplying a developing solution from the first nozzle onto a wafer being rotated; and supplying the rinse solution from the second nozzle onto the wafer being rotated.

Abstract: According to one embodiment, a core material is ejected onto an object using an inkjet method to form a core pattern on the object, a mask pattern is formed on the object so as to embed the core pattern, and the core pattern which is embedded in the mask pattern is removed.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.