Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: The present application provides a method for manufacturing a semiconductor device, the method including forming a resist film on a substrate, forming a protective film on the resist film, exposing the resist film with a first liquid interposed between the protective film and a lens for exposure, removing the protective film using an oxidative second liquid after exposing the resist film, and developing the resist film to form a resist pattern after removing the protective film.

Abstract: A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere, a predetermined time, and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

Abstract: A pattern forming method comprises forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Abstract: A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

Abstract: A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.