Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.

Abstract: Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.

Abstract: A device is disclosed which includes a die comprising an integrated circuit and an interposer that is coupled to the die, the interposer having a smaller footprint than that of the die. A method is disclosed which includes operatively coupling an interposer to a die comprising an integrated circuit, the interposer having a smaller footprint than that of the die, and filling a space between the interposer and the die with an underfill material.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are described herein. An embodiment of one such method includes attaching a plurality of singulated microelectronic dies to a removable support member with an active side of the individual dies facing toward the support member, depositing a flowable material onto the dies and a portion of the removable support member such that the flowable material covers a back side of the individual dies and is disposed between adjacent dies, and removing the support member from the active sides of the dies.

Abstract: Methods for forming and attaching covers to microelectronic imaging units, packaging microelectronic imagers at the wafer level, and microelectronic imagers having covers that protect the image sensor are disclosed herein. In one embodiment, a method includes providing a first substrate having a plurality of covers, the covers including windows comprising regions of the first substrate and stand-offs projecting from the windows. The method continues by providing a second substrate having a plurality of microelectronic dies with image sensors, integrated circuits electrically coupled to the image sensors, and terminals electrically coupled to the integrated circuits. The method includes assembling the covers with corresponding dies so that the windows are aligned with corresponding image sensors and stand-offs contact corresponding dies inboard of the terminals and outboard of the image sensors.

Abstract: A stacked semiconductor die assembly includes at least two partially offset semiconductor dice with bond pads located adjacent at least one peripheral side thereof supported on a redistribution element formed of a material of substantially similar CTE to that of the dice, and a paddle-less lead frame secured to the redistribution element during fabrication, including encapsulation. The assembly is configured to be substantially vertically symmetrical with respect to inner ends of lead fingers of the lead frame to facilitate uniform encapsulant flow. The semiconductor die assembly may be configured in a package with leads extending from two sides thereof, such as a thin small outline package (TSOP), or four sides thereof, such as a quad flat pack (QFP).

Abstract: A semiconductor component includes a semiconductor substrate, conductive vias in the substrate having terminal portions, a polymer layer on the substrate and back side conductors formed by the terminal portions of the conductive vias embedded in the polymer layer. A stacked semiconductor component includes a plurality of components having aligned conductive vias in electrical communication with one another.

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: The present invention provides techniques to fabricate build-up single or multichip modules. In one embodiment, this is accomplished by dispensing die-attach material in one or more pre-etched cavities on a substrate. A semiconductor die is then placed over each pre-etched cavity including the die-attach material by urging a slight downward pressure on the substrate such that an active surface of each placed semiconductor die is disposed across from the substrate and is further substantially coplanar with the substrate. The semiconductor die is then secured to the substrate by curing the die-attach material. A miniature circuit board, including one or more alternating layer of dielectric material and metallization structures, is then formed over the substrate and the active surface of each semiconductor die to electrically interconnect the semiconductor dies.

Abstract: A method for fabricating semiconductor components includes the steps of: providing a semiconductor substrate having a circuit side, a back side and conductive vias; removing portions of the substrate from the back side to expose terminal portions of the conductive vias; depositing a polymer layer on the back side encapsulating the terminal portions; and then planarizing the polymer layer and ends of the terminal portions to form self aligned conductors embedded in the polymer layer. Additional back side elements, such as terminal contacts and back side redistribution conductors, can also be formed in electrical contact with the conductive vias. A semiconductor component includes the semiconductor substrate, the conductive vias, and the back side conductors embedded in the polymer layer. A stacked semiconductor component includes a plurality of components having aligned conductive vias in electrical communication with one another.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are described herein. An embodiment of one such method includes attaching a plurality of singulated microelectronic dies to a removable support member with an active side of the individual dies facing toward the support member, depositing a flowable material onto the dies and a portion of the removable support member such that the flowable material covers a back side of the individual dies and is disposed between adjacent dies, and removing the support member from the active sides of the dies.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are described herein. An embodiment of one such method includes attaching a plurality of singulated microelectronic dies to a removable support member with an active side of the individual dies facing toward the support member, depositing a flowable material onto the dies and a portion of the removable support member such that the flowable material covers a back side of the individual dies and is disposed between adjacent dies, and removing the support member from the active sides of the dies.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a device includes a support member and a flexed microelectronic die mounted to the support member. The flexed microelectronic die has a plurality of terminals electrically coupled to the support member and an integrated circuit operably coupled to the terminals. The die can be a processor, memory, imager, or other suitable die. The support member can be a lead frame, a plurality of electrically conductive leads, and/or an interposer substrate.

Abstract: A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

Abstract: A microelectronic device wafer includes an adhesive molded in-situ on the wafer. Adhesives and wafers are positioned in molds and a method that includes drawing in the molds at least a partial vacuum and partially curing the adhesive provides an in-situ molded adhesive that is positioned on the wafer. The adhesives can be in liquid, solid, or other forms prior to molding. During molding, the adhesive can be partially cured by heating or irradiating.

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.