Abstract: A method for encapsulating a flip chip in one step is disclosed. The flip chip is immersed in a polymer bath to apply a coating of the polymer to the surface of the flip chip except for the distal end of the conductive projections on the flip chip electrically conductive pads. The coated flip chip is exposed to ultraviolet light or heat (e.g., IR radiation) so that the coating is at least partially cured.

Abstract: A multidie semiconductor device assembly or package includes an interposer comprising a substrate with at least one receptacle therethrough. A plurality of semiconductor device components (e.g., semiconductor devices) may be assembled with the interposer. For example, at least one contact pad of a semiconductor device component adjacent to one surface of the interposer may be electrically connected to a corresponding contact pad of another semiconductor device component positioned adjacent to an opposite surface of the interposer. As another example, multiple semiconductor device components may be at least partially superimposed relative to one another and at least partially disposed within a receptacle of the interposer.

Abstract: An improved image sensor wherein a first micro-lens array comprised of one or more micro-lenses is positioned over a cavity such that incoming light is focused on the photo sensors of the image sensor. The first micro-lens array may collimate and focus incoming light onto the photo sensors of the image sensor, or may collimate incoming light and direct it to a second micro-lens array which then focuses the light onto the photo sensors. A method of fabricating the improved image sensor is also provided wherein the cavity and first micro-lens array are formed by use of a sacrificial material.

Abstract: Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined by shells of microcapsules. The voids impart the dielectric materials with reduced dielectric constants and, thus, increased electrical insulation properties.

Abstract: Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a microelectronic die having a first side with a plurality of bond-pads and a second side opposite the first side includes forming a recess in a substrate, placing the microelectronic die in the recess formed in the substrate with the second side facing toward the substrate, and covering the first side of the microelectronic die with a dielectric layer after placing the microelectronic die in the recess. The substrate can include a thermal conductive substrate, such as a substrate comprised of copper and/or aluminum. The substrate can have a coefficient of thermal expansion at least approximately equal to the coefficient of thermal expansion of the microelectronic die or a printed circuit board.

Abstract: A method and apparatus for underfilling a gap between a semiconductor die or device and a substrate, where the semiconductor die or device is electrically connected to the substrate so that an active surface of the semiconductor die is facing a top surface of the substrate with the gap therebetween. A silane layer is applied to the active surface of the semiconductor die, the upper surface of the substrate, and/or both to increase the surface tension thereon. The increased surface tension thereby allows the underfill material to fill the gap via capillary action in a lesser flow time more effectively, and therefore, is more efficient than conventional underfilling methods.

Abstract: Infrared (IR) absorbing layers and microelectronic imaging units that employ such layers are disclosed herein. In one embodiment, a method of manufacturing a microelectronic imaging unit includes attaching an IR-absorbing lamina having a filler material to a backside die surface of an imager workpiece. An individual imaging die is singulated from the workpiece such that a section of the infrared-absorbing lamina remains attached to the individual imaging die. The individual imaging die is coupled to an interposer substrate with a portion of the IR-absorbing lamina positioned therebetween. In another embodiment, the IR-absorbing lamina is a die attach film and the filler material is carbon black.

Abstract: A method for fabricating a BOC package includes the steps of providing a semiconductor die having planarized bumps encapsulated in a polymer layer, and providing a substrate having a plurality of conductors and an opening. The method also includes the steps of attaching the die to the substrate in a BOC configuration, wire bonding wires through the opening to the conductors and the bumps, and forming a die encapsulant on the die.

Abstract: Semiconductor packages, packaged semiconductor devices, methods of manufacturing semiconductor packages, methods of packaging semiconductor devices, and associated systems are disclosed. A semiconductor package in accordance with a particular embodiment includes a die having a first side carrying a first bond site electrically connected to a sensor and/or a transmitter configured to receive and/or transmit radiation signals. The semiconductor package also includes encapsulant material at least partially encapsulating a portion of the die. The semiconductor package includes a conductive path from the first bond site to a second bond site, positioned on a back surface of the encapsulant, which can include through-encapsulant interconnects. A cover can be positioned adjacent to the die and be generally transparent to a target wavelength.

Abstract: A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

Abstract: An electronic device package is described that includes a non-metal die attached adhesive. The die attach is positioned in discrete positions on a surface to which the die will be fixed. The die is placed on the discrete die attach. The die attach, in an embodiment, is an epoxy resin or other material that is cured. After curing, the die is electrically connected to an external circuit. The volume between the die and surface is filled with an underfill. In an embodiment, underfill cross-links with the die attach.

Abstract: A semiconductor package includes a substrate, a die attached and wire bonded to the substrate, and a die encapsulant encapsulating the die. The die includes a circuit side having a pattern of die contacts, planarized wire bonding contacts bonded to the die contacts, and a planarized polymer layer on the circuit side configured as stress defect barrier. A method for fabricating the package includes the steps of forming bumps on the die, encapsulating the bumps in a polymer layer, and then planarizing the polymer layer and the bumps to form the planarized wire bonding contacts. The method also includes the steps of attaching and wire bonding the die to the substrate, and then forming the die encapsulant on the die.

Abstract: A method and apparatus for improved stencil/screen print quality is disclosed. The stencil or screen assists in application of a printable material onto a substrate, such as an adhesive to a semiconductor die of a semiconductor wafer during a lead-on-chip (LOC) packaging process. In one embodiment, the stencil includes a coating applied to at least one surface of a pattern of the stencil or screen to retard running of the printable material onto the surface. In another embodiment, the stencil or screen includes a second coating applied to at least one other surface of the pattern to promote spreading of the printable material onto the substrate.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: Underfill compounds including electrically charged filler elements, microelectronic devices having underfill compounds including electrically charged filler elements, and methods of disposing underfill including electrically charged filler elements on microelectronic devices are disclosed herein. In one embodiment, a microelectronic device includes a microelectronic component, a plurality of electrical couplers carried by the microelectronic component, and an underfill layer covering at least a portion of the electrical couplers. The underfill layer comprises a binder and a plurality of electrically charged filler elements in the binder. The underfill layer can include a first zone having a first concentration of electrically charged filler elements and a second zone having a second concentration of electrically charged filler elements different than the first concentration.

Abstract: A device is disclosed which includes a die comprising an integrated circuit and an interposer that is coupled to the die, the interposer having a smaller footprint than that of the die. A method is disclosed which includes operatively coupling an interposer to a die comprising an integrated circuit, the interposer having a smaller footprint than that of the die, and filling a space between the interposer and the die with an underfill material.

Abstract: Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture are disclosed. A flowable dielectric protective material with fluxing capability is applied over the active surface of an unbumped semiconductor wafer to cover active device areas, bond pads, test socket contact locations, and optional pre-scribed wafer street trenches. Preformed solder balls are then disposed over the bond pads, and the wafer is subjected to a heating process to reflow the solder balls and at least partially cure the dielectric protective material. During the heating process, the dielectric protective material provides a fluxing capability to enable the solder balls to wet the bond pads. In other exemplary embodiments, the dielectric protective material is applied over only intended physical contact locations and/or pre-scribed wafer street trenches, in which case the dielectric protective material need not include flux material and may additionally include a filler material.

Abstract: Microfeature devices, microfeature workpieces, and methods for manufacturing microfeature devices and microfeature workpieces are disclosed herein. The microfeature workpieces have an integrated circuit, a surface, and a plurality of interconnect elements projecting from the surface and arranged in arrays on the surface. In one embodiment, a method includes forming a coating on the interconnect elements of the microfeature workpiece, producing a layer over the surface of the microfeature workpiece after forming the coating, and removing the coating from at least a portion of the individual interconnect elements. The coating has a surface tension less than a surface tension of the interconnect elements to reduce the extent to which the material in the layer wicks up the interconnect elements and produces a fillet at the base of the individual interconnect elements.

Abstract: An improved image sensor wherein a first micro-lens array comprised of one or more micro-lenses is positioned over a cavity such that incoming light is focused on the photo sensors of the image sensor. The first micro-lens array may collimate and focus incoming light onto the photo sensors of the image sensor, or may collimate incoming light and direct it to a second micro-lens array which then focuses the light onto the photo sensors. A method of fabricating the improved image sensor is also provided wherein the cavity and first micro-lens array are formed by use of a sacrificial material.

Abstract: A method and apparatus is disclosed for sequential processing of integrated circuits, particularly for conductively passivating a contact pad with a material which resists formation of resistive oxides. In particular, a tank is divided into three compartments, each holding a different solution: a lower compartment and two upper compartments divided by a barrier, which extends across and partway down the tank. The solutions have different densities and therefore separate into different layers. In the illustrated embodiment, integrated circuits with patterned contact pads are passed through one of the upper compartments, in which oxide is removed from the contact pads. Continuing downward into the lower compartment and laterally beneath the barrier, a protective layer is selectively formed on the insulating layer surrounding the contact pads. As the integrated circuits are moved upwardly into the second upper compartment, a conducting monomer selectively forms on the contact pads prior to any exposure to air.