Abstract: A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength ? that was provided by an illumination system.

Abstract: An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports at least one optical element of the imaging device via an active relative situation control device of a control device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another. Each supporting spring device defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device of the control device. The measuring device is connected to the relative situation control device. The measuring device outputs to the relative situation control device measurement information representative for the position and/or the orientation of the at least one optical element in relation to a reference in at least one degree of freedom in space.

Abstract: A mirror for a microlithographic projection exposure apparatus, and a method for operating a deformable mirror. In one aspect, a mirror includes an optical effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is able to be applied by a first electrode arrangement situated on the side of the piezoelectric layer (16) facing the reflection layer stack, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. The piezoelectric layer has a plurality of columns spatially separated from one another by column boundaries, wherein a mean column diameter of the columns is in the range of 0.1 ?m to 50 ?m.

Abstract: The disclosure provides a method and to an apparatus for determining the heating state of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. A method for determining the heating state of an optical element includes: measuring values of a first temperature that the optical element has at a first position using a temperature sensor; and estimating a second temperature that the optical element has at a second position, which is located at a distance from the first position, on the basis of the measured values, wherein estimating the second temperature is accomplished while taking into account a temporal change in the previously measured values.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength ? that was provided by an illumination system.

Abstract: The disclosure relates to an optical module with first and second components, a supporting structure and an anticollision device. The first component is supported by the supporting structure and is arranged adjacent to and at a distance from the second component to form a gap. The supporting structure defines a path of relative movement, on which the first and second components move in relation to one another under the influence of a disturbance, a collision between collision regions of the first and second components occurring if the anticollision device is inactive. The anticollision device includes a first anticollision unit on the first component, which produces a first field, and a second anticollision unit on the second component, which is assigned to the first anticollision unit and produces a second field.

Abstract: An optical element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or mask inspection apparatus, and a method for correcting the wavefront effect of an optical element. The optical element has at least one correction layer (12, 22) and a manipulator that manipulates the layer stress in this correction layer such that a wavefront aberration present in the optical system is at least partially corrected by this manipulation. The manipulator has a radiation source for spatially resolved irradiation of the correction layer with electromagnetic radiation (5). This spatially resolved irradiation enables a plurality of spaced apart regions (12a, 12b, 12c, . . . ; 22a, 22b, 22c, . . . ) to be generated, equally modified in terms of their respective structures, in the correction layer.

Abstract: A method and an apparatus for determining the heating state of an optical element in a microlithographic optical system involves at least one contactless sensor which is based on the reception of electromagnetic radiation from the optical element. The radiation range captured by the sensor is varied for the purposes of ascertaining a temperature distribution in the optical element.

Abstract: A mirror for a microlithographic projection exposure apparatus, and a method for operating a deformable mirror. In one aspect, a mirror includes an optical effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is able to be applied by a first electrode arrangement situated on the side of the piezoelectric layer (16) facing the reflection layer stack, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. The piezoelectric layer has a plurality of columns spatially separated from one another by column boundaries, wherein a mean column diameter of the columns is in the range of 0.1 ?m to 50 ?m.

Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.

Abstract: A mirror that has a mirror substrate (12), a reflection layer stack (21) reflecting electromagnetic radiation incident on the optical effective surface (11), and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is applied by way of a first electrode arrangement and a second electrode arrangement situated on alternate sides of the piezoelectric layer. In one aspect, both the first and the second electrode arrangements have a plurality of electrodes (20a, 20b), to each of which an electrical voltage relative to the respective other electrode arrangement can be applied via leads (19a, 19b). Separate mediator layers (17a, 17b) set continuous electrical potential profiles along the respective electrode arrangement, and where said mediator layers differ from one another in their average electrical resistance by a factor of at least 1.5.

Abstract: The disclosure provides a method and to an apparatus for determining the heating state of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. A method for determining the heating state of an optical element includes: measuring values of a first temperature that the optical element has at a first position using a temperature sensor; and estimating a second temperature that the optical element has at a second position, which is located at a distance from the first position, on the basis of the measured values, wherein estimating the second temperature is accomplished while taking into account a temporal change in the previously measured values.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus, has an optical effective surface and includes a substrate (11, 61, 71, 81, 91), a reflection layer system (16, 66, 76, 86, 96) for reflecting electromagnetic radiation impinging on the optical effective surface (10a, 60a, 70a, 80a, 90a), an electrode arrangement (13, 63, 73, 83) composed of a first material having a first electrical conductivity, the electrode arrangement being provided on the substrate, and a mediator layer (12, 62, 72, 82, 92) composed of a second material having a second electrical conductivity. The ratio between the first electrical conductivity and the second electrical conductivity is at least 100. The mirror also includes at least one compensation layer (88) which at least partly compensates for the influence of a thermal expansion of the electrode arrangement (83) on the deformation of the optical effective surface (80a).

Abstract: An optical element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or mask inspection apparatus, and a method for correcting the wavefront effect of an optical element. The optical element has at least one correction layer (12, 22) and a manipulator that manipulates the layer stress in this correction layer such that a wavefront aberration present in the optical system is at least partially corrected by this manipulation. The manipulator has a radiation source for spatially resolved irradiation of the correction layer with electromagnetic radiation (5). This spatially resolved irradiation enables a plurality of spaced apart regions (12a, 12b, 12c, . . . ; 22a, 22b, 22c, . . . ) to be generated, equally modified in terms of their respective structures, in the correction layer.

Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.

Abstract: Mirror elements (2a, 2b) include a substrate (4a, 4b) and a multilayer arrangement (5a, 5b). The multilayer arrangement includes a reflective layer system (6a, 6b) having a radiation entrance surface (7a, 7b) and a piezoelectric layer (8a, 8b) arranged between the radiation entrance surface and the substrate. Each mirror element includes an electrode arrangement (9a, 9b, 9c) associated with the piezoelectric layer. A layer thickness (tp) of the piezoelectric layer is controlled by the electric field generated. An interconnection arrangement (10) electrically interconnects adjacent electrodes of adjacent electrode arrangements. According to one formulation, the interconnection arrangement generates an electric field in a gap region (11) between the adjacent electrodes.

Abstract: A mirror having a mirror substrate (12, 32, 52), a reflection layer stack (21, 41, 61) reflecting electromagnetic radiation having an operating wavelength that is incident on the optical effective surface (11, 31, 51), and at least one piezoelectric layer (16, 36, 56), arranged between the substrate and the reflection layer stack and to which an electric field producing a locally variable deformation is applied. A first electrode arrangement (20, 40, 60) situated on the side of the piezo-electric layer faces the reflection layer stack, and a second electrode arrangement (14, 34, 54) is situated on the side of the piezoelectric layer facing the mirror substrate. Optionally, a bracing layer (98) is provided, which limits sinking of the piezoelectric layer (96) into the mirror substrate (92) when an electric field is applied, in comparison with an analogous construction lacking the bracing layer, thereby increasing the piezoelectric layer's effective deflection.

Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.

Abstract: A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ? from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.