Abstract: A projection objective for microlithography for imaging an object field onto an image field includes: a first partial objective for imaging the object field onto a first real intermediate image; a second partial objective for imaging the first intermediate image onto a second real intermediate image; a third partial objective for imaging the second intermediate image onto the image field, the third partial objective including an aperture; and a first folding mirror for deflecting radiation toward a concave mirror and a second folding mirror for deflecting the radiation from the concave mirror toward the image plane; in which the projection objective is an immersion projection objective in which during operation an immersion liquid is situated between a last lens surface and an image plane, and at least one surface of at least one lens in the second partial objective has an antireflection coating including at least six layers.

Abstract: A projection exposure apparatus (10) for microlithography has a plurality of optical components (M1-M6) forming an exposure beam path, as well as a distance measurement system (30, 130, 230) configured to measure a distance between at least one of the optical components and a reference element (40, 140, 240). The distance measurement system comprises a frequency comb generator (32, 132, 232), which is configured to generate electromagnetic radiation (36, 236) having a comb-shaped frequency spectrum.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.

Abstract: A microlithographic projection exposure apparatus includes a correction device configured to correct optical wavefront deformations. The correction device includes first and second optical elements and a drive mechanism configured to move the first and second optical elements between a first arrangement and a second arrangement. In the first arrangement the first optical element is an inner optical element having at least a portion that is arranged in a projection light path, and the second optical element is an outer optical element that is arranged completely outside the projection light path. In the second arrangement the second optical element is the inner optical element, and the first optical element is the outer optical element. The correction device further includes a temperature control device configured to modify a temperature distribution in the outer optical element.

Abstract: A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ? from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Abstract: The invention relates to an optical arrangement comprising: at least one optical element comprising an optical surface and a substrate, wherein the substrate is formed from a material whose temperature-dependent coefficient of thermal expansion at a zero crossing temperature ?TZC=TZC?Tref related to a reference temperature Tref is equal to zero, wherein the optical surface has, during the operation of the optical arrangement, a location-dependent temperature distribution ?T(x, y) that is dependent on a local irradiance (5a), is related to the reference temperature Tref and has an average temperature ?Tav, a minimum temperature ?Tmin and a maximum temperature ?Tmax, wherein the average temperature ?Tav is less than the average value 1/2 (?Tmax+?Tmin) formed from the minimum temperature ?Tmin and the maximum temperature ?Tmax, and wherein the zero crossing temperature ?TZC is greater than the average temperature ?Tav.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided. The method includes determining at least one light quiver parameter which describes a property of a light quiver, and controlling the operation of the projection exposure apparatus taking account of the light quiver parameter.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: A catadioptric projection objective has a multiplicity of lenses and at least one concave mirror, and also two deflection mirrors in order to separate a partial beam path running from the object field to the concave mirror from the partial beam path running from the concave mirror to the image field. The deflection mirrors are tilted relative to the optical axis of the projection objective about tilting axes running parallel to a first direction (x-direction). The first deflection mirror is arranged in optical proximity to a first field plane and the second deflection mirror is arranged in optical proximity to a second field plane, which is optically conjugate with respect to the first field plane. A displacement device for the synchronous displacement of the deflection mirrors is provided. The deflection mirrors have different local distributions of their reflection properties in first and second reflection regions, respectively.

Abstract: A catadioptric projection objective has a multiplicity of lenses and at least one concave mirror, and also two deflection mirrors in order to separate a partial beam path running from the object field to the concave mirror from the partial beam path running from the concave mirror to the image field. The deflection mirrors are tilted relative to the optical axis of the projection objective about tilting axes running parallel to a first direction (x-direction). The first deflection mirror is arranged in optical proximity to a first field plane and the second deflection mirror is arranged in optical proximity to a second field plane, which is optically conjugate with respect to the first field plane. A displacement device for the synchronous displacement of the deflection mirrors is provided. The deflection mirrors have different local distributions of their reflection properties in first and second reflection regions, respectively.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9). The objective includes a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17), and a third partial objective (19) imaging the second intermediate image onto the image field. The second partial objective is a catadioptric objective having exactly one concave mirror and having at least one lens (L21, L22). A first folding mirror (23) deflects the radiation from the object plane toward the concave mirror and a second folding mirror (25) deflects the radiation from the concave mirror toward the image plane. At least one surface of a lens (L21, L22) of the second partial objective has an antireflection coating having a reflectivity of less than 0.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation that is incident on the optical effective surface, and at least two piezoelectric layers (16a, 16b, 16c), which are arranged successively between the mirror substrate and the reflection layer stack in the stack direction of the reflection layer stack and to which an electric field can be applied to produce a locally variable deformation, wherein at least one intermediate layer (22a, 22b) made of crystalline material is arranged between the piezoelectric layers (16a, 16b, 16c), wherein the intermediate layer is designed to leave an electric field, which is present in the region of the piezoelectric layers (16a, 16b, 16c) that adjoin the intermediate layer (22a, 22b) in the stack direction of the reflection layer stack (21), substantially uninfluenced.

Abstract: A microlithographic projection exposure apparatus includes a correction device configured to correct optical wavefront deformations. The correction device includes first and second optical elements and a drive mechanism configured to move the first and second optical elements between a first arrangement and a second arrangement. In the first arrangement the first optical element is an inner optical element having at least a portion that is arranged in a projection light path, and the second optical element is an outer optical element that is arranged completely outside the projection light path. In the second arrangement the second optical element is the inner optical element, and the first optical element is the outer optical element. The correction device further includes a temperature control device configured to modify a temperature distribution in the outer optical element.

Abstract: The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.

Abstract: A catadioptric projection objective has a multiplicity of lenses and at least one concave mirror, and also two deflection mirrors in order to separate a partial beam path running from the object field to the concave mirror from the partial beam path running from the concave mirror to the image field. The deflection mirrors are tilted relative to the optical axis of the projection objective about tilting axes running parallel to a first direction (x-direction). The first deflection mirror is arranged in optical proximity to a first field plane and the second deflection mirror is arranged in optical proximity to a second field plane, which is optically conjugate with respect to the first field plane. A displacement device for the synchronous displacement of the deflection mirrors is provided. The deflection mirrors have different local distributions of their reflection properties in first and second reflection regions, respectively.

Abstract: A method for operating a projection exposure tool for microlithography is provided. The projection exposure tool includes an optical system which includes a number of optical elements which, during an imaging process, convey electromagnetic radiation. All of the surfaces of the optical elements interact with the electromagnetic radiation during the imaging process to form an overall optical surface of the optical system.

Abstract: Catadioptric projection objectives for microlithography include: a first partial objective for imaging an object field onto a first real intermediate image; a catadioptric partial objective having one concave mirror and a lens for imaging the first intermediate image onto a second real intermediate image; a third partial objective including an aperture stop and no more than four lenses between the aperture stop and an image field, the third partial objective for imaging the second intermediate image onto the image field; and a first folding mirror for deflecting the radiation from the object plane toward the concave mirror and a second folding mirror for deflecting the radiation from the concave mirror toward the image plane. The projection objective is an immersion projection objective. At least one surface of the lens in the catadioptric partial objective has an antireflection coating including at least six layers.