Patents by Inventor Toranosuke Ashizawa
Toranosuke Ashizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070270085Abstract: To provide a slurry for Chemical Mechanical Polishing, a Chemical Mechanical Polishing method using said slurry, and a method of producing electronic devices using said method that makes it possible to achieve a low scratch process capability in processing surfaces such as SiO2 film surfaces and the like and also to enable speed polishing to attain a high processing efficiency. Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains and water, wherein said abrasive grains are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential, the organic host particles constituting the composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced; the slurry is added with panarization additive; and the planarization additive is poly(methyl)acrylic acid ammonium salt.Type: ApplicationFiled: February 27, 2007Publication date: November 22, 2007Inventors: Ryo Ota, Takayuki Nakakawaji, Toranosuke Ashizawa, Naoyuki Koyama
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Publication number: 20070175104Abstract: The polishing slurry of the invention is a polishing slurry for polishing a silicon oxide film on polysilicon, which contains an abrasive, polysilicon polishing inhibitor, and water. As the polishing inhibitor, it is preferable to use (1) a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ?-substituted derivatives thereof, (2) polyethylene glycol, (3) an oxyethylene adduct of an acetylene-based diol, (4) a water-soluble organic compound having an acetylene bond, (5) an alkoxylated linear aliphatic alcohol, or (6) a copolymer containing polyvinyl pyrrolidone or vinyl pyrrolidone. There is provided a polishing method which is capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in the manufacturing method for a semiconductor.Type: ApplicationFiled: November 9, 2006Publication date: August 2, 2007Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masaya Nishiyama, Kazuhiro Enomoto, Masato Fukasawa, Toshiaki Akutsu, Yuuto Otsuki, Toranosuke Ashizawa
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Publication number: 20070169421Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.Type: ApplicationFiled: March 23, 2007Publication date: July 26, 2007Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
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Publication number: 20070141957Abstract: A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.Type: ApplicationFiled: November 21, 2006Publication date: June 21, 2007Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Hiroshi Ono, Toranosuke Ashizawa, Yasuo Kamigata
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Patent number: 7163644Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: GrantFiled: November 18, 2004Date of Patent: January 16, 2007Assignee: Hitachi Chemical Company, Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060289826Abstract: A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.Type: ApplicationFiled: May 28, 2004Publication date: December 28, 2006Inventors: Naoyuki Koyama, Youichi Machii, Masato Yoshida, Masato Fukasawa, Toranosuke Ashizawa
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Publication number: 20060248804Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: July 12, 2006Publication date: November 9, 2006Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Patent number: 7115021Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: GrantFiled: January 11, 2002Date of Patent: October 3, 2006Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20060197054Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: April 20, 2006Publication date: September 7, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060186372Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: April 20, 2006Publication date: August 24, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060180787Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: August 17, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20060118524Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: June 8, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20050269295Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: July 11, 2005Publication date: December 8, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050118820Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: November 18, 2004Publication date: June 2, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050085168Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: October 12, 2004Publication date: April 21, 2005Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6863700Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: GrantFiled: February 13, 2001Date of Patent: March 8, 2005Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6783434Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: GrantFiled: June 19, 2001Date of Patent: August 31, 2004Assignee: Hitachi Chemical Company, Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20040147206Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: January 20, 2004Publication date: July 29, 2004Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Patent number: 6615499Abstract: The present invention provides a method for producing cerium oxide comprising rapid heating of cerium salts to a calcining temperature to calcine them, a cerium oxide abrasive containing the cerium oxide produced by the method and pure water, an abrasive containing a slurry in which cerium oxide particles having an intensity ratio of an area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) in a powder X-ray diffraction chart of 3.20 or more are dispersed in a medium, an abrasive containing a slurry in which cerium oxide particles whose bulk density is 6.5 g/cm3 or less are dispersed into a medium, an abrasive containing a slurry in which abrasive grains having pores are dispersed into a medium, a method for polishing a substrate comprising polishing a predetermined substrate using the abrasive; and a method for manufacturing a semiconductor comprising the step of polishing by the abrasive.Type: GrantFiled: November 28, 2001Date of Patent: September 9, 2003Assignee: Hitachi Chemical Co., Ltd.Inventors: Jun Matsuzawa, Atsushi Sugimoto, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Yuuto Ootsuki
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Publication number: 20020090895Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: January 11, 2002Publication date: July 11, 2002Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno