Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: Disclosed are a phosphor pattern which comprises a calcination product of a phosphor pattern precursor containing

Abstract: Disclosed are a phosphor pattern which comprises a calcination product of a phosphor pattern precursor containing (A) an organic material containing at least one selected from the group consisting of an alkali metal and an alkaline earth metal; and (B) a phosphor wherein an amount of the alkali metal or the alkaline earth metal is 2% by weight or less based on the amount of (B) the phosphor, a process for preparing the same, an organic alkali developing solution for forming the same, an emulsion developing solution for forming the same and a back plate for plasma display using the same.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: Disclosed are a phosphor pattern which comprises a calcination product of a phosphor pattern precursor containing

Abstract: Disclosed are a phosphor pattern which comprises a calcination product of a phosphor pattern precursor containing (A) an organic material containing at least one selected from the group consisting of an alkali metal and an alkaline earth metal; and (B) a phosphor wherein an amount of the alkali metal or the alkaline earth metal is 2% by weight or less based on the amount of (B) the phosphor, a process for preparing the same, an organic alkali developing solution for forming the same, an emulsion developing solution for forming the same and a back plate for plasma display using the same.

Abstract: This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.

Abstract: Disclosed are a process for preparing a phosphor pattern of the present invention comprises the steps of: (I) forming a phosphor-containing photosensitive resin composition layer (A) on a substrate having unevenness, (II) irradiating a scattered light to the layer (A) imagewisely, (III) developing the layer (A) by removing the portion to which the scattered light is imagewisely irradiated to form a pattern, and (IV) calcinating the formed pattern to remove an unnecessary portion from the pattern formed in the step (III) to form a phosphor pattern, a phosphor pattern produced by the above process and a back plate for the plasma display panel provided with the phosphor pattern on a substrate for a plasma display panel.

Abstract: An oxide superconductor of the formula: Bi.sub.1.0 Sr.sub.A Ca.sub.B Mg.sub.C Ba.sub.D Cu.sub.1.0.+-.0.15 O.sub.X wherein A=0.6-1.3, B=0.3-0.9, C=0.01-0.3 and D=0.01-0.3 in atomic ratio, having a 2212 phase with a critical temperature of making electrical resistance zero at about 80K or more, can be produced by firing preferably at 820.degree.-870.degree. C. in a lower oxygen content atmosphere.

Abstract: The present invention provides an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-B Mg.sub.B Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35 and B=0.05-0.3 in which numerals represent atomic ratio and an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, barium and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-(B+C) (Mg.sub.B Ba.sub.C)Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35, B=0.05-0.3 and C=0.02-0.2 in which numerals represent atomic ratio. Methods for producing these superconductors are also provided.

Abstract: A superconducting thick film circuit board or thick film superconductor obtained by forming a rod-like crystal superconducting composite layer comprising a superconductor made of a compound of M-Ba-Cu-O, M being Y and/or a lanthanide element, and a composite of Ag and Pt on a stabilized zirconia substrate has a high Jc value and good superconducting properties.

Abstract: A zirconium oxide sintered body for an oxygen concentration sensor is produced by mixing 87.5 to 91.0% by weight of zirconium oxide powder, 8.5 to 12.3% by weight of yttrium oxide powder, 0.5% by weight or less of silicon oxide and 0.2 to 1.0% by weight of aluminum oxide, drying the resulting mixture, followed by sintering so as to make the cubic phase content in crystal phase of the resulting sintered body at ordinary temperatures 95% by weight or more. Said zirconium oxide sintered body is excellent in mechanical strength, thermal shock and ionic conductivity and can be used stably for a long period of time.