Abstract: A method for anticipating sensitivity to a medicine for osteoporosis is provided which is characterized by analyzing respective genetic polymorphisms of a vitamin D receptor gene, an estrogen receptor gene, and an apolipoprotein E gene from a genome DNA contained in a sample obtained from a human, and anticipating, based on the analyzed combination of the genetic polymorphisms, that the sample is derived from an individual who shows a specific priority to sensitivities to a plurality of remedies for osteoporosis. A reagent for simultaneously detecting genetic polymorphisms is also provided which contains amplification primers and/or detection probes specific to respective genes of the vitamin D receptor gene, apolipoprotein E gene, and estrogen receptor gene. Further, a method for simultaneously detecting these genes, and a method for selecting remedies for bone disease based on the genetic polymorphisms are provided.

Abstract: There is provided a method of designing a conductive pattern layout between a plurality of blocks in an LSI, the conductive pattern transferring data from one block to the other blocks, comprising: (a) extracting the blocks from logic circuit data; (b) preparing a floor plan which defines a provisional arrangement of the blocks; (c) arranging a plurality of conductive pattern cells between the plurality of blocks after preparing the floor plan; (d) re-arranging the blocks on the basis of the arrangement of the conductive pattern cells; (e) arranging a plurality of power source patterns; and (g) arranging a plurality of signal patterns. Due to this conductive pattern layout and method of designing thereof, wiring between blocks can be carried out simply and with high accuracy.

Abstract: An ITO film as a transparent conductive film is formed on a semiconductor layer comprising an amorphous semiconductor or a microcrystalline semiconductor, a comb-like collecting electrode is formed on the ITO film, and a cover glass containing alkaline ions is placed on the ITO film and collecting electrode with a resin film made of EVA between them. The (222) plane orientation degree of the ITO film (transparent conductive film) is not less than 1.0, preferably not less than 1.2 and not more than 2.6, and more preferably not less than 1.4 and not more than 2.5. Alternatively, the transparent conductive film has an orientation of (321) planes on the boundary side with respect to the semiconductor layer and mainly an orientation of (222) planes in the remaining portion. When the total thickness of the ITO film is 100 nm, the (321)/(222) diffraction strength ratio in a 10 nm-thick portion on the semiconductor layer side is not less than 0.5 and not more than 2.5.