Patents by Inventor Toshiaki Fujii

Toshiaki Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7718981
    Abstract: There is provided a method of arranging, as a composite charged-particle beam system, a gas ion beam apparatus, an FIB and an SEM in order to efficiently prepare a TEM sample. The composite charged-particle beam system includes an FIB lens-barrel 1, an SEM lens-barrel 2, a gas ion beam lens-barrel 3, and a rotary sample stage 9 having an eucentric tilt mechanism and a rotating shaft 10 orthogonal to an eucentric tilt axis 8. In the composite charged-particle beam system, an arrangement is made such that a focused ion beam 4, an electron beam 5 and a gas ion beam 6 intersect at a single point, an axis of the FIB lens-barrel 1 and an axis of the SEM lens barrel 2 are orthogonal to the eucentric tilt axis 8, respectively, and the axis of the FIB lens-barrel 1, an axis of the gas ion beam lens-barrel 3 and the eucentric tilt axis 8 are in one plane.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: May 18, 2010
    Assignee: SII NanoTechnology Inc.
    Inventors: Haruo Takahashi, Yo Yamamoto, Toshiaki Fujii
  • Patent number: 7700367
    Abstract: In a method of making a lamina specimen, first and second ion beams are simultaneously used to sputter etch first and second side walls of a lamina region at the same time under first and second ion beam conditions. A scanning ion microscope observation of the lamina region is made using the second ion beam while sputter etching of the first and second side walls is continued using the first ion beam until the thickness of the lamina has a predetermined value.
    Type: Grant
    Filed: July 5, 2004
    Date of Patent: April 20, 2010
    Assignee: SII NanoTechnology Inc.
    Inventor: Toshiaki Fujii
  • Publication number: 20100008563
    Abstract: a section processing method of the invention is the section processing method including a mark portion forming step of forming a mark portion capable of being processed by the removal processing and capable of identifying a mark shape in the section for observation within a range of capable of forming the section for observation at a vicinity of the observation target section, a section forming step of forming the section for observation by subjecting the sample and the mark portion to the removal processing within a range of including the mark portion formed by the mark portion forming step, and an observation image acquiring step of acquiring an observation image of the section for observation in the midst of being formed or after having been formed by the section forming step.
    Type: Application
    Filed: February 27, 2009
    Publication date: January 14, 2010
    Inventors: Toshiaki Fujii, Junichi Tashiro, Mike Hassel-Shearer
  • Patent number: 7531796
    Abstract: Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: May 12, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Junichi Tashiro, Yutaka Ikku, Toshiaki Fujii
  • Patent number: 7518125
    Abstract: A processing apparatus uses a focused charged particle beam to process a micro sample that is supported on a micro mount part. The micro mount part is supported on a micro sample stage and locally cooled by a cooling unit. The micro mount part is thermally independent of the micro sample stage and, due to its small size, can be cooled rapidly by the cooling unit.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: April 14, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Yo Yamamoto, Haruo Takahashi, Toshiaki Fujii
  • Publication number: 20090028248
    Abstract: A video encoding method for encoding video images as a single video image by using parallax compensation which performs prediction by using parallax between the video images, and a corresponding decoding method. The number of parameters as parallax data used for the parallax compensation is selected and set for each reference image. Data of the set number of parameters is encoded, and parallax data in accordance with the number of parameters is encoded. During decoding, parallax-parameter number data, which is included in encoded data and designates the number of parameters as parallax data for each reference image, is decoded, and parallax data in accordance with the number of parameters is decoded, where the parallax data is included in the encoded data.
    Type: Application
    Filed: December 29, 2006
    Publication date: January 29, 2009
    Applicants: Nippon Telegraph and Telephone Corporation, National University Corporation Nagoya University
    Inventors: Masaki Kitahara, Hideaki Kimata, Shinya Shimizu, Kazuto Kamikura, Yoshiyuki Yashima, Masayuki Tanimoto, Toshiaki Fujii, Kenji Yamamoto
  • Publication number: 20080315088
    Abstract: There is provided a method of arranging, as a composite charged-particle beam system, a gas ion beam apparatus, an FIB and an SEM in order to efficiently prepare a TEM sample. The composite charged-particle beam system includes an FIB lens-barrel 1, an SEM lens-barrel 2, a gas ion beam lens-barrel 3, and a rotary sample stage 9 having an eucentric tilt mechanism and a rotating shaft 10 orthogonal to an eucentric tilt axis 8. In the composite charged-particle beam system, an arrangement is made such that a focused ion beam 4, an electron beam 5 and a gas ion beam 6 intersect at a single point, an axis of the FIB lens-barrel 1 and an axis of the SEM lens barrel 2 are orthogonal to the eucentric tilt axis 8, respectively, and the axis of the FIB lens-barrel 1, an axis of the gas ion beam lens-barrel 3 and the eucentric tilt axis 8 are in one plane.
    Type: Application
    Filed: June 6, 2008
    Publication date: December 25, 2008
    Inventors: Haruo Takahashi, Yo YAMAMOTO, Toshiaki FUJII
  • Patent number: 7442942
    Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: October 28, 2008
    Assignee: SII Nanotechnology Inc.
    Inventors: Haruo Takahashi, Toshiaki Fujii, Yutaka Ikku, Kouji Iwasaki, Yo Yamamoto
  • Publication number: 20080224198
    Abstract: The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.
    Type: Application
    Filed: March 12, 2008
    Publication date: September 18, 2008
    Inventors: Toshiaki Fujii, Haruo Takahashi, Junichi Tashiro
  • Publication number: 20080042059
    Abstract: Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
    Type: Application
    Filed: August 17, 2007
    Publication date: February 21, 2008
    Inventors: Junichi Tashiro, Yutaka Ikku, Toshiaki Fujii
  • Patent number: 7301159
    Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: November 27, 2007
    Assignee: Riken & SII NanoTechnology Inc.
    Inventors: Toshiaki Fujii, Masao Abe, Kunji Shigeto, Minuru Kawamura, Alekber Yu Kasumov, Kazuhito Tsukagoshi, Yoshinobu Aoyagi
  • Patent number: 7298729
    Abstract: The present invention relates to a radio communication system and destination portable terminal time identification method capable of identifying the time of a destination portable telephone terminal in advance by an originating portable telephone terminal.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: November 20, 2007
    Assignee: NEC Corporation
    Inventor: Toshiaki Fujii
  • Patent number: 7276691
    Abstract: There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam so as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: October 2, 2007
    Assignee: SII NanoTechnology Inc.
    Inventors: Toshio Kodama, Masakatsu Hasuda, Toshiaki Fujii, Kouji Iwasaki, Yasuhiko Sugiyama, Yasuyuki Takagi
  • Publication number: 20070187226
    Abstract: A method and an apparatus for purifying a gas containing contaminants are disclosed. The gas is irradiated with an ultraviolet ray and/or a radiation ray so as to produce microparticles of the contaminants. The resultant microparticles of the contaminants are contacted with a photocatalyst. Then, the photocatalyst is irradiated with light so as to decompose the contaminants held in contact with the photocatalyst. Organic compounds organosilicon compounds, basic gas and the like can be decomposed by the action of the photocatalyst. Even when these species are present at a low concentration, they can be concentrated locally by transforming into microparticles, and hence can be removed.
    Type: Application
    Filed: April 23, 2007
    Publication date: August 16, 2007
    Applicant: EBARA CORPORATION
    Inventor: Toshiaki FUJII
  • Publication number: 20070045560
    Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
    Type: Application
    Filed: August 24, 2006
    Publication date: March 1, 2007
    Inventors: Haruo Takahashi, Toshiaki Fujii, Yutaka Ikku, Kouji Iwasaki, Yo Yamamoto
  • Publication number: 20070040128
    Abstract: A sample to be observed or processed with a focused charged particle beam is formed small, and only the micro sample is locally cooled. Alternatively, a sample mount part is used which has the structure that can relax a thermal drift.
    Type: Application
    Filed: August 9, 2006
    Publication date: February 22, 2007
    Inventors: Yo Yamamoto, Haruo Takahashi, Toshiaki Fujii
  • Publication number: 20060188946
    Abstract: objects to be achieved by the invention are to provide a nanobio device in which cultured cells are organized at a high-level in a state near in vivo, and to provide a method of using the nanobio device of imitative anatomy structure. The nanobio device of imitative anatomy structure of the invention is obtained by manufacturing a substrate with a bio-compatible substance and arranging a plurality of types of cells thereon in a desired array. A method of manufacturing a nanobio device in the invention includes a step of manufacturing a substrate for a nanobio device by a micromachine processing technique and a step of arranging a plurality of cultured cells on the substrate in a desired array with laser optical tweezers.
    Type: Application
    Filed: February 14, 2006
    Publication date: August 24, 2006
    Inventors: Masanao Munekane, Hiroyuki Wada, Kouji Iwasaki, Toshiaki Fujii, Takahiro Ochiya, Yusuke Yamamoto, Takumi Teratani
  • Patent number: 7095024
    Abstract: The problem of the present invention is to provide a TEM sample equipped with an identifying function for easily specifying a detailed TEM sample and to provide a system for handling the management of information relating to the TEM sample using the TEM when making observations that is constructed with the FIB device manufacturing the sample. The TEM sample of the present invention is written with a mark encoding information specifying the sample at a specified location of a peripheral part. Information relating to the sample filed taking sample specifying information as an index is supplied to a TEM as associated matter. The sample working FIB device and observation TEM device of the present invention are provided with a function enabling writing of information relating to the sample and images to the file during operation which is then read out and utilized on a display.
    Type: Grant
    Filed: April 20, 2004
    Date of Patent: August 22, 2006
    Assignees: SII NanoTechnology Inc., JEOL Ltd.
    Inventors: Tatsuya Adachi, Toshiaki Fujii, Masashi Iwatsuki, Mikio Naruse, Mike Hassel Shearer
  • Publication number: 20060163497
    Abstract: There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam 80 as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.
    Type: Application
    Filed: August 20, 2003
    Publication date: July 27, 2006
    Inventors: Toshio Kodama, Masakatsu Hasuda, Toshiaki Fujii, Kouji Iwasaki, Yasuhiko Sugiyama, Yasuyuki Takagi
  • Publication number: 20060157341
    Abstract: At the same time as making a lamina by performing a sputtering etching working of a 1st focused ion beam 101, a scanning ion microscope observation is made by performing an irradiation of a 2nd focused ion beam 102 from a direction parallel to a side wall of the lamina, thereby measuring a thickness of the lamina. And, the working by the focused ion beam is finished by confirming the fact that the thickness of the lamina has become a predetermined thickness.
    Type: Application
    Filed: July 5, 2004
    Publication date: July 20, 2006
    Inventor: Toshiaki Fujii