Abstract: A signal component for scanning a processing range and a signal component for synchronizing to movement of a moving stage are superimposed on an ion beam scanning signal. Using such a scanning signal, processing is carried out while moving a sample stage. In this way, it is possible to carry out processing using a focused ion beam device in a reduced amount of time for a plurality of samples.

Abstract: A method and an apparatus for purifying a gas containing contaminants are disclosed. The gas is irradiated with an ultraviolet ray and/or a radiation ray so as to produce microparticles of the contaminants. The resultant microparticles of the contaminants are contacted with a photocatalyst. Then, the photocatalyst is irradiated with light so as to decompose the contaminants held in contact with the photocatalyst. Organic compounds, organosilicon compounds, basic gas and the like can be decomposed by the action of the photocatalyst. Even when these species are present at a low concentration, they can be concentrated locally by transforming into microparticles, and hence can be removed.

Abstract: In keeping with an increase of the size of wafers, etc. used in a fabrication process, a device used for inspection also becomes large, and as a result, more installation space is needed. In addition, due to the increase in the device size, there is a problem that the device becomes expensive and investment in equipment rises. The object of the present investment is to solve these problems. A sample having foreign matter or defects 4 that has already been inspected is divided so as to include a plurality of reference points 3 where positional coordinates can be determined. The divided sample 2 is inspected using a compact inspection device. At this time, the positional coordinates of the foreign matter or defects 4 are calculated from the positional coordinates of reference points 3 on the divided sample 2, are then inspected.

Abstract: The present invention provides a method of and an apparatus for preventing a substrate from being oxidized to suppress the production of a natural oxide film in an ordinary air atmosphere rather than a vacuum or inactive gas atmosphere. The present invention is characterized in that a substrate is stored in a closed space surrounded by a light-shielding member to suppress the growth of a natural oxide film on the substrate. In the space, it is preferable to store the substrate while removing a gaseous contaminant or both a gaseous contaminant and a particulate substance. Since a semiconductor substrate is stored in the space surrounded by the light-shielding member, no light is applied to the surface of the semiconductor substrate, thus suppressing the generation of a natural oxide film. The method is capable of suppressing the generation of a natural oxide film easily at a low cost without using a vacuum or inactive gas atmosphere because the process can be performed within air.

Abstract: A radio communication system includes first and second portable terminals and a first switching network. Each portable terminal is assigned a unique identifier and has a display and timepiece. The first switching network has first and second base stations which are assigned unique identifiers and perform radio communication with the first and second portable terminals, a first switching unit connected to the first and second base stations, a first database which stores the positions of the first and second portable terminals in association with the positions of the first and second base stations, and a second database which stores pieces of time difference information of the first and second base stations. The first portable terminal has a time difference acquisition request unit and current time calculation unit. The first base station adds the identifier of the first base station to a time difference acquisition request, and transmits the time difference acquisition request to the first switching unit.

Abstract: A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing means and adsorption and/or absorption means so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.

Abstract: A thin film is etched by irradiating charged particles to a surface of the thin film. An etching time of the thin film is measured by observing a change in intensity of secondary charged particles emitted by etched portions of the thin film. A thickness of the thin film is calculated in accordance with the measured etching time.

Abstract: A method and an apparatus for purifying a gas containing contaminants are disclosed. The gas is irradiated with an ultraviolet ray and/or a radiation ray so as to produce microparticles of the contaminants. The resultant microparticles of the contaminants are contacted with a photocatalyst. Then, the photocatalyst is irradiated with light so as to decompose the contaminants held in contact with the photocatalyst. Organic compounds, organosilicon compounds, basic gas and the like can be decomposed by the action of the photocatalyst. Even when these species are present at a low concentration, they can be concentrated locally by transforming into microparticles, and hence can be removed.

Abstract: A method an apparatus for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas. The apparatus includes a reaction chamber including a support for a substrate, a device for introducing a reactive gas into the reaction chamber, an electric discharge device, and a device for forming an electric field in the reaction chamber in a direction to the support for the substrate, and an outlet for discharging the reactive gas.

Abstract: A loader disposed in a low cleanliness room along a border between the low cleanliness room and a high cleanliness room, for transporting a dust free article between an inside of a container receiving the dust free article and the high cleanliness room, which includes: (a) a stage for mounting the container; (b) an opening portion through which the dust free article is transported between the inside of the container and the high cleanliness room; (c) a door for opening and closing the opening portion; (d) unifying means for unifying a cover of the container and the door when the container approaches the door; and (e) a driving means for transferring the unified cover and door within the loader to simultaneously open and close the opening portion of the container.

Abstract: Artificial charcoal is manufactured by utilizing organic materials and environmental contaminated materials that would become industrial waste if processed by ordinary processing methods. Fine stone powder that generates far-infrared radiation and/or negative ions is mixed with a powder of pulverized, combustible, industrial waste material. The fine stone powder may comprise one or more of quartz porphyry, granite porphyry and tourmaline. The mixed powders are moulded and solidified to produce an artificial charcoal having great advantages, both socially and economically.

Abstract: A carrier box 21 for a semiconductor substrate, including an opening and closing mechanism for taking the semiconductor in or out of the box 21. The box 21 is provided with a gas cleaning device A-2 which uses a photo-electron or the photo-catalyst actuated by light irradiation for cleaning an inside of the box, or a gas cleaning unit including the gas cleaning device and a rechargeable battery for supplying the gas cleaning device with electricity and integrated into the gas cleaning unit, and thereby providing a practically efficient function to remove particles or gaseous harmful components.

Abstract: A method and an apparatus for removing particles from a surface of an article, such as a semiconductor wafer in a clean room. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.

Abstract: A sample transfer apparatus has a transfer arm for supporting a sample and is mounted for undergoing movement to transfer the sample from a first station to a second station. The transfer arm has a holding portion for holding the sample by hydrogen bonding.

Abstract: The present invention provides a method of producing a health-promoting construction material. The method includes processing a construction material by use of an adhesive to which a finely pulverized powder of stone generating far-infrared radiation and/or negative ions has been incorporated. The stone generating far-infrared radiation and/or negative ions is preferably quartz porphyry, granite porphyry, tourmaline, zeolite, or a mixture thereof.

Abstract: A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing apparatus and adsorption and/or absorption apparatus so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.

Abstract: A focused ion beam apparatus having an ion source, a focusing optical system and a scanning electrode scans the focused ion beam across a desired region of a sample surface to form a cross-section in which stacked conductors separated by an insulating film are exposed. To prevent charge-up of the sample due to an electrically floating nature of a conductor, a thin hole is formed using the focused ion beam to extend from one conductor to another. Etched particles are adhered to a side surface of the hole due to thin hole formation, with the result that a conductive film is formed electrically connecting the conductors. A floating conductive film is put into contact with a non-floating film to thereby avoid charge-up during observation of the sample with a charged particle beam.

Abstract: A loader disposed in a low cleanliness room along a border between the low cleanliness room and a high cleanliness room, for transporting a dust free article between an inside of a container receiving the dust free article to the high cleanliness room, which comprises: (a) a stage for mounting the container; (b) an opening portion through which the dust free article is transported between the inside of the container and the high cleanliness room; (c) a door for opening and closing the opening portion; (d) unifying means for unifying a cover of the container and the door when the container approaches the door; and (e) a driving means for transferring unified cover and door within the loader to simultaneously open and close the opening portion and the container.

Abstract: A method for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas.

Abstract: A method and an apparatus for removing particles from a surface of an article, such as a semiconductor wafer in a clean room, are disclosed. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.