Patents by Inventor Toshikazu Kondo
Toshikazu Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162234Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: ApplicationFiled: November 15, 2023Publication date: May 16, 2024Inventors: Toshikazu KONDO, Hideyuki KISHIDA
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Patent number: 11927862Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: GrantFiled: February 28, 2023Date of Patent: March 12, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
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Patent number: 11824062Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: GrantFiled: May 6, 2021Date of Patent: November 21, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Hideyuki Kishida
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Publication number: 20230258991Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: ApplicationFiled: February 28, 2023Publication date: August 17, 2023Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
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Publication number: 20230190970Abstract: A sterilization method for a medical rubber part in which non-elution characteristics can be maintained even after sterilization with gamma ray. The sterilization method for a medical rubber part can include irradiating, with gamma ray, a packaging article for a medical rubber part made from an elastomer that contains a polyethylene, the packaging article accommodating a plurality of the medical rubber parts.Type: ApplicationFiled: December 21, 2022Publication date: June 22, 2023Applicant: Sumitomo Rubber Industries, Ltd.Inventors: Yogun KIDA, Kei TAJIMA, Kazuki NOJIRI, Yuichiro MATSUTANI, Toshiki ONISHI, Toshikazu KONDO
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Publication number: 20230192996Abstract: A medical rubber part in which non-elution characteristics are maintained even after sterilization with gamma ray, a packaging article for the medical rubber part, and a medical rubber composition for manufacturing the medical rubber part can be provided or implemented. The medical rubber composition can contain or comprise: a (a) base polymer containing a halogenated isobutylene-isoprene rubber; a (b) polyethylene; and a (c) triazine derivative as a crosslinking agent. A proportion of the triazine derivative contained per 100% by mole of a halogen of the halogenated isobutylene-isoprene rubber contained in the (a) base polymer can be 1% by mole to 15% by mole.Type: ApplicationFiled: December 21, 2022Publication date: June 22, 2023Applicant: Sumitomo Rubber Industries, Ltd.Inventors: Yogun KIDA, Kei TAJIMA, Kazuki NOJIRI, Yuichiro MATSUTANI, Toshiki ONISHI, Toshikazu KONDO
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Publication number: 20230008859Abstract: A medical rubber composition can contain, comprise, consist, or consist essentially of: (a) an isobutylene-isoprene rubber: (b) a diene-based rubber; and a silica having a BET specific surface area not lower than 130 m2/g. An amount of (a) the isobutylene-isoprene rubber contained in 100 parts by mass of a rubber component composed of (a) the isobutylene-isoprene rubber and (b) the diene-based rubber can be larger than 30 parts by mass and smaller than 55 parts by mass.Type: ApplicationFiled: July 8, 2022Publication date: January 12, 2023Applicant: Sumitomo Rubber Industries, Ltd.Inventors: Hirofumi KONISHI, Toshikazu KONDO, Masayoshi KASHIBE, Hideyuki SHIGEMOTO
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Publication number: 20210351206Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: ApplicationFiled: May 6, 2021Publication date: November 11, 2021Inventors: Toshikazu KONDO, Hideyuki KISHIDA
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Publication number: 20210208434Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: ApplicationFiled: March 23, 2021Publication date: July 8, 2021Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
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Patent number: 11011549Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: GrantFiled: March 5, 2020Date of Patent: May 18, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Hideyuki Kishida
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Patent number: 10983407Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: GrantFiled: November 12, 2019Date of Patent: April 20, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
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Publication number: 20200279875Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: ApplicationFiled: March 5, 2020Publication date: September 3, 2020Inventors: Toshikazu KONDO, Hideyuki KISHIDA
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Publication number: 20200081283Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: ApplicationFiled: November 12, 2019Publication date: March 12, 2020Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
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Patent number: 10586811Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: GrantFiled: October 4, 2018Date of Patent: March 10, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Hideyuki Kishida
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Patent number: 10539845Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.Type: GrantFiled: March 21, 2017Date of Patent: January 21, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
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Publication number: 20190109158Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: ApplicationFiled: October 4, 2018Publication date: April 11, 2019Inventors: Toshikazu KONDO, Hideyuki KISHIDA
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Patent number: 10131772Abstract: Provided are a rubber composition for a base tread capable of improving fuel efficiency, handling stability, and durability (flex crack growth resistance) in a balanced manner, and a pneumatic tire formed from the rubber composition. The present invention relates to a rubber composition for a base tread, including: a rubber component and a reinforcing agent, the rubber component including natural rubber, a butadiene rubber (1) containing 1,2-syndiotactic polybutadiene crystals, a butadiene rubber (2) synthesized in the presence of a rare earth catalyst, and a modified butadiene rubber (3) having a cis content of not more than 50% by mass.Type: GrantFiled: February 24, 2014Date of Patent: November 20, 2018Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.Inventor: Toshikazu Kondo
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Patent number: 10096623Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: GrantFiled: December 28, 2017Date of Patent: October 9, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshikazu Kondo, Hideyuki Kishida
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Publication number: 20180190680Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.Type: ApplicationFiled: December 28, 2017Publication date: July 5, 2018Inventors: Toshikazu KONDO, Hideyuki KISHIDA
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Patent number: 9884516Abstract: Provided is a pneumatic tire capable of improving fuel efficiency, handling stability, and durability in a balanced manner. The present invention relates to a pneumatic tire, comprising a tread that includes a cap layer and a base layer, the cap layer and the base layer satisfying relationships represented by the following formulas (1) to (3): 50/50?Vc/Vb?90/10??(1) wherein Vc is the volume of the cap layer and Vb is the volume of the base layer, 0.65?E*c/E*b<1.00??(2), and 1.30?(tan ?c/E*c)/(tan ?b/E*b)<2.40??(3) wherein E*c and tan ?c are the complex modulus and the loss tangent, respectively, of the cap layer at 30° C., and E*b and tan ?b are the complex modulus and the loss tangent, respectively, of the base layer at 30° C.Type: GrantFiled: April 10, 2012Date of Patent: February 6, 2018Assignees: SUMITOMO RUBBER INDUSTRIES, LTD., HONDA MOTOR CO., LTD.Inventors: Toshikazu Kondo, Takuya Horiguchi, Emiko Mogi