Patents by Inventor Toshikazu Kondo

Toshikazu Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140275331
    Abstract: Provided are a rubber composition for a base tread capable of improving fuel efficiency, handling stability, and durability (flex crack growth resistance) in a balanced manner, and a pneumatic tire formed from the rubber composition. The present invention relates to a rubber composition for a base tread, including: a rubber component and a reinforcing agent, the rubber component including natural rubber, a butadiene rubber (1) containing 1,2-syndiotactic polybutadiene crystals, a butadiene rubber (2) synthesized in the presence of a rare earth catalyst, and a modified butadiene rubber (3) having a cis content of not more than 50% by mass.
    Type: Application
    Filed: February 24, 2014
    Publication date: September 18, 2014
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Toshikazu KONDO
  • Publication number: 20140135425
    Abstract: Provided are a rubber composition for a tread, capable of improving the fuel economy and abrasion resistance in a balanced manner while achieving a good appearance and a good cure rate; and a pneumatic tire containing the rubber composition. The present invention relates to a rubber composition for a tread, including: a solution-polymerized styrene-butadiene rubber, carbon black, silica, and polyethylene glycol, wherein a rubber component of the rubber composition contains 60 mass % or more of the solution-polymerized styrene-butadiene rubber based on 100 mass % of the rubber component, and the rubber composition includes, per 100 parts by mass of the rubber component, 10 parts by mass or less of the carbon black, 50 parts by mass or more of the silica, and 0.1 to 3.5 parts by mass of the polyethylene glycol.
    Type: Application
    Filed: May 18, 2012
    Publication date: May 15, 2014
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Toshikazu Kondo
  • Publication number: 20140117352
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: January 6, 2014
    Publication date: May 1, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Publication number: 20140027029
    Abstract: Provided is a pneumatic tire capable of improving fuel efficiency, handling stability, and durability in a balanced manner. The present invention relates to a pneumatic tire, comprising a tread that includes a cap layer and a base layer, the cap layer and the base layer satisfying relationships represented by the following formulas (1) to (3): 50/50?Vc/Vb?90/10??(1) wherein Vc is the volume of the cap layer and Vb is the volume of the base layer, 0.65?E*c/E*b<1.00??(2), and 1.30?(tan ?c/E*c)/(tan ?b/E*b)<2.40??(3) wherein E*c and tan ?c are the complex modulus and the loss tangent, respectively, of the cap layer at 30° C., and E*b and tan ?b are the complex modulus and the loss tangent, respectively, of the base layer at 30° C.
    Type: Application
    Filed: April 10, 2012
    Publication date: January 30, 2014
    Applicants: HONDA MOTOR CO., LTD., SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: Toshikazu Kondo, Takuya Horiguchi, Emiko Mogi
  • Patent number: 8629000
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: January 8, 2013
    Date of Patent: January 14, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Publication number: 20140011944
    Abstract: The present invention provides a rubber composition for a tread which enables not only to improve handling stability, abrasion resistance, and fuel economy in a balanced manner, but also to improve wet grip performance and processability in a balanced manner, and a pneumatic tire formed from the rubber composition. The present invention relates to a rubber composition for a tread, comprising a terminally-modified solution-polymerized styrene-butadiene rubber, a butadiene rubber synthesized in the presence of a rare earth catalyst, and a reinforcing agent.
    Type: Application
    Filed: April 3, 2012
    Publication date: January 9, 2014
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Toshikazu Kondo
  • Publication number: 20130326151
    Abstract: To reduce power consumption of a computer or the like, a nonvolatile memory divided into a plurality of segments is applied to main memory used for virtual storage management. Thus, power supply even to a segment having a physical address that is being used can be stopped. As a result, power consumption of the computer or the like performing virtual storage management can be reduced.
    Type: Application
    Filed: May 28, 2013
    Publication date: December 5, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuji Iwaki, Toshikazu Kondo
  • Publication number: 20130315021
    Abstract: A semiconductor device capable of simply performing power gating and a driving method thereof are provided. Power gating is started passively (automatically in the case of satisfying predetermined conditions). Specifically, the semiconductor device includes a transistor for selecting whether a power source voltage is supplied or not to a functional circuit. The power gating is started by turning off the transistor in the case where a voltage between a source and a drain is less than or equal to a predetermined voltage. Therefore, complicated operation is not needed at the time of starting power gating. Specifically, it is possible to start power gating without a process for predicting the timing at which an arithmetic operation performed in the functional circuit is terminated. As a result, it is possible to start power gating easily.
    Type: Application
    Filed: May 15, 2013
    Publication date: November 28, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Jun Koyama
  • Publication number: 20130299825
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Application
    Filed: July 18, 2013
    Publication date: November 14, 2013
    Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
  • Patent number: 8502226
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: August 6, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Jun Koyama, Shunpei Yamazaki
  • Patent number: 8466222
    Abstract: Provided are a rubber composition for sidewalls containing 100 parts by mass of a rubber component consisting of at least a natural rubber or a modified natural rubber, 5 parts by mass or less of carbon black, 10 to 40 parts by mass of silica and 5 to 30 parts by mass of an inorganic filler component composed of one kind or two or more kinds of inorganic filler excluding carbon black and silica, and a pneumatic tire provided with a sidewall rubber prepared using the rubber composition. The used amounts of raw materials derived from petroleum resources have been reduced in this rubber composition. Moreover, the rubber composition exhibits low fuel consumption due to low rolling resistance and good flex crack growth resistance.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: June 18, 2013
    Assignee: Sumitomo Rubber Industries, Ltd.
    Inventor: Toshikazu Kondo
  • Patent number: 8362563
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: January 29, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Publication number: 20120286278
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: July 26, 2012
    Publication date: November 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Patent number: 8247276
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: August 21, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Publication number: 20120149806
    Abstract: A rubber composition that can improve in good balance the fuel economy, wet-grip performance, and abrasion resistance, and a pneumatic tire that uses this rubber composition are provided. This rubber composition contains a rubber component, and carbon black and/or silica, wherein based on 100% by mass of the rubber component, the rubber component contains 5 to 50% by mass of natural rubber, 0.3 to 10% by mass of an epoxidized natural rubber, and at least 5% by mass of a conjugated diene polymer that has a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified, and wherein a total content of the carbon black and the silica is 3 to 100 parts by mass per 100 parts by mass of the rubber component.
    Type: Application
    Filed: December 12, 2011
    Publication date: June 14, 2012
    Inventors: Toshikazu KONDO, Jun OKAMOTO, Sakae OKUBO, Ryoichi KASAHARA, Kenji MURATA, Kazuhiro KODAMA, Kazuyuki NISHIOKA
  • Patent number: 8160799
    Abstract: A turbine bypass control method includes: a high-pressure side pressure controller configured to output a first operation amount signal corresponding to a valve opening; a low-pressure side pressure controller configured to output a second operation amount signal corresponding to a valve opening; a high value selector configured to output as a high value operation amount signal, one of the first operation amount signal and the second operation amount signal which indicates a larger opening; a first signal switching unit configured to receive the high value operation amount signal and the second operation amount signal and output a first bypass valve operation amount signal; a second signal switching unit configured to receive the high value operation amount signal and the first operation amount signal and output a second bypass valve operation amount signal; and a rapid opening controller.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: April 17, 2012
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Naohiko Ishibashi, Takehiro Ishigaki, Toshikazu Kondo
  • Publication number: 20110241011
    Abstract: A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor.
    Type: Application
    Filed: March 24, 2011
    Publication date: October 6, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Jun KOYAMA, Toshikazu KONDO, Shunpei YAMAZAKI
  • Publication number: 20110230593
    Abstract: The present invention aims to provide a tire rubber composition that achieves a good balance of grip performance (especially, wet grip performance), abrasion resistance, cut and chip resistance, low rolling resistance, and kneadability, and a pneumatic tire using the same. The composition comprise: a rubber component including a styrene-butadiene rubber modified by a compound of formula (1): and a non-modified styrene-butadiene rubber; a filler including silica, the filler being in an amount of 80 parts by mass or less per 100 parts by mass of the rubber component; and sulfur in an amount of 0.5-1.5 parts by mass per 100 parts by mass of the rubber component, the modified styrene-butadiene rubber having a bound styrene content of 20-40% by mass and a vinyl content of 30-65% by mass, and the non-modified styrene-butadiene rubber having a bound styrene content of 25-45% by mass and a vinyl content of 10-50% by mass.
    Type: Application
    Filed: March 15, 2011
    Publication date: September 22, 2011
    Inventor: Toshikazu KONDO
  • Publication number: 20110210327
    Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
    Type: Application
    Filed: February 17, 2011
    Publication date: September 1, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshikazu KONDO, Jun KOYAMA, Shunpei YAMAZAKI
  • Publication number: 20110063339
    Abstract: It is an object to reduce power consumption of a display device which can perform multi-gray scale display and to suppress deterioration of an element included in the display device. The usage of a display device includes a first initialization period in which the gray scale level of an entire pixel portion is converted into a first gray scale level and a second initialization period in which the gray scale level of an entire pixel portion is converted into a second gray scale level. In the first initialization period, scanning of a plurality of signals and weighting of a holding period of each signal are performed. Therefore, the small number of scanning of signals can realize voltage application for an appropriate time with respect to each of a plurality of gray scale storage display elements included in the display device.
    Type: Application
    Filed: September 8, 2010
    Publication date: March 17, 2011
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsushi Umezaki, Toshikazu Kondo