Abstract: A lithium secondary battery that has high capacity and excellent cycle characteristics is provided. The lithium ion secondary battery includes a cathode, an anode, and an electrolyte. The anode has, on an anode current collector, an anode active material layer including LixSiFy (1?x?2 and 5?y?6) as an anode active material.

Abstract: Provided is a photocatalytic coating film that can develop excellent photocatalytic activity and exhibit superior adhesion to an adherend surface. The photocatalytic coating film is obtained by applying and drying a photocatalytic coating composition containing at least rod-like or needle-like titanium oxide particles and a binder component so that the photocatalytic coating film contains the titanium oxide particles in a content of 0.5 g/m2 or more. The photocatalytic coating film contains the titanium oxide particle in a content per unit volume (1 m2 by 1 ?m thick) of less than 3.0 g. The titanium oxide particles preferably have an aspect ratio of 1.5 or more, the aspect ratio specified as the ratio of a long side length to a short side length of particle. The compositional ratio (by weight) of the titanium oxide particles to the binder component in the photocatalytic coating film is preferably from 1:6 to 30:1.

Abstract: The present invention discloses an agent for treating a polyglutamine aggregation-caused disease or suppressing its onset, which comprises, as an active ingredient, (1) (i) HGF protein, (ii) a partial peptide of HGF protein that is substantially equivalent in activity to HGF protein, or a salt of either of them, or (2) DNA containing (i) DNA encoding HGF protein, (ii) DNA encoding a partial peptide of HGF protein that is substantially equivalent in activity to HGF protein or (iii) DNA which encodes a protein or a peptide that is substantially equivalent in activity to HGF protein and hybridizes with DNA comprising a complementary base sequence of either of the above-mentioned DNAs under a stringent condition.

Abstract: Disclosed is a therapeutic agent effective for the fundamental treatment of a spinal cord injury and a demyelinating disease. Specifically disclosed are a therapeutic agent for a spinal cord injury and a therapeutic agent for a demyelinating disease, each of which comprises an HGF protein as an active ingredient.

Abstract: The invention provides a modified glycosylation-deficient HGF and a production method thereof. The glycosylation-deficient HGF is produced by introducing amino acid mutation(s) so that no glycosylation take place at at least one glycosylation site of hepatocyte growth factor.

Abstract: A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy.

Abstract: An HGF precursor protein variant, in which a peptide structure comprises a sequence including a peptide chain X inserted between an ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the C-terminus of the ? chain are deleted, and a ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the N-terminus of the ? chain are deleted; wherein (i) the peptide chain X has an amino-acid sequence of at least two residues, (ii) the peptide chain X can be cleaved by a protease reaction or a chemical reaction, and (iii) a protein obtained by cleaving at least one site of the peptide chain X has HGF action.

Abstract: A semiconductor memory includes: a voltage supply circuit which supplies a first voltage to a word line when an internal circuit is in a standby state, and supplies a second voltage higher than the first voltage to the word line when the internal circuit is in an active state; and a control circuit changes a drive capacity of the voltage supply circuit when changing from the standby state to the active state and the second voltage is supplied to the word line.

Abstract: A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy.

Abstract: A float-type oil-level detection apparatus is provided for detecting the surface of engine oil. A housing (81) for housing a float (82) has a through-hole (136) in the sidewall of the side opposite from the sidewall that faces the movement of the oil dipper (69).

Abstract: Disclosed is a semiconductor memory device capable of arbitrarily setting an upper limit of the number of error corrections during a test operation. The semiconductor memory device has a counter, a register, and a comparison circuit. The counter counts the number of error corrections. The register, when an upper limit setting signal (in the case shown in FIG. 1, an external upper limit fetch signal) is externally inputted to change the upper limit of the number of error corrections, changes the upper limit. The comparison circuit compares the number of error corrections with the changed upper limit.

Abstract: Disclosed is a therapeutic agent effective for the fundamental treatment of a spinal cord injury and a demyelinating disease. Specifically disclosed are a therapeutic agent for a spinal cord injury and a therapeutic agent for a demyelinating disease, each of which comprises an HGF protein as an active ingredient.

Abstract: A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy.

Abstract: A lithium secondary battery that has high capacity and excellent cycle characteristics is provided. The lithium ion secondary battery includes a cathode, an anode, and an electrolyte. The anode has, on an anode current collector, an anode active material layer including LixSiFy (1?x?2 and 5?y?6) as an anode active material.

Abstract: An HGF precursor protein variant, in which a peptide structure comprises a sequence including a peptide chain X inserted between an ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the C-terminus of the ? chain are deleted, and a ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the N-terminus of the ? chain are deleted; wherein (i) the peptide chain X has an amino-acid sequence of at least two residues, (ii) the peptide chain X can be cleaved by a protease reaction or a chemical reaction, and (iii) a protein obtained by cleaving at least one site of the peptide chain X has HGF action.

Abstract: An HGF precursor protein variant, in which a peptide structure comprises a sequence including a peptide chain X inserted between an ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the C-terminus of the ? chain are deleted, and a ? chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the N-terminus of the ? chain are deleted; wherein (i) the peptide chain X has an amino-acid sequence of at least two residues, (ii) the peptide chain X can be cleaved by a protease reaction or a chemical reaction, and (iii) a protein obtained by cleaving at least one site of the peptide chain X has HGF action.

Abstract: A semiconductor memory is provided which performs redundancy on a memory cell by a given bit unit, the semiconductor memory includes: a comparator circuit that compares an input address and a redundancy address; a judgment circuit that judges whether to perform the redundancy based on a compared result, wherein the judgment circuit outputs a plurality of redundancy judgment signals that indicates whether to perform redundancy for each portion obtained by dividing the given bit unit by n which is an integer equal to or greater than two.

Abstract: A negative electrode for a nonaqueous electrolyte secondary cell, includes: a negative electrode active material layer containing a negative electrode active material, a polyvinylidene fluoride component including polyvinylidene fluoride and/or a derivative having polyvinylidene fluoride as a main chain, a styrene-butadiene component including a styrene-butadiene polymer and/or a derivative having a styrene-butadiene polymer as a main chain, a nonionic surfactant having an HLB of 10 to 15, and N-methylpyrrolidone; and a foil-shaped negative electrode current collector provided with the negative electrode active material layer on at least one principal surface of the collector.

Abstract: A neovascularization promoting composition, a granulation formation-promoting composition and a preventive or curative composition for skin ulcer, comprising a human recombinant HGF wherein five amino acid residues are deleted in the first Kringle domain thereof. The provided compositions of the present invention are useful as a drug capable of promoting granulation formation and neovascularization and being effective in tissue restoration, especially as a preventive and curative agent for skin ulcer.

Abstract: A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array.