Abstract: A semiconductor laser module includes a polarization direction transforming part which transforms polarization directions of first and second laser beams such that they are orthogonal to each other even if a polarization dependent optical isolator is utilized in the semiconductor laser module. The configuration allows the two laser beams to propagate through the birefringence element to the output port without each splitting into an ordinary ray and an extraordinary ray on entering the birefringence element, and therefore free from decrease of optical power reaching the output port. Thus, high power semiconductor laser modules can be provided.

Abstract: A semiconductor apparatus includes (i) a semiconductor substrate, (ii) a field oxide film, formed in a surface of the semiconductor substrate, having an aperture section, (iii) a electrode pad formed on the field oxide film, and (iv) a penetration electrode electrically connected to the electrode pad via the aperture section of the field oxide film and a hole formed in the semiconductor substrate. The hole is formed in the aperture section of the field oxide film, when perpendicularly viewing the semiconductor substrate.

Abstract: A semiconductor laser module according to the present invention includes a polarization-synthesizing module having a polarization-synthesizing means configured to polarization synthesize two laser beams and a holder member for holding the polarization-synthesizing means with an approximately cylindrical circumferential surface, and a supporting member for supporting the holder member at least to rotate about an central axis and fixing the holder member at a predetermined position.

Abstract: A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.

Abstract: A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor laser element. The package has a vent for introducing and/or exhausting a low heat conduction type gas into or from the package. The vent is hermetically sealed by swaging and welding the external end thereof after the low heat conduction type gas has been introduced into or exhausted form the package.

Abstract: A fabrication method of a semiconductor device according to the present invention includes the steps of: bonding a reinforcing plate with a front surface of a semiconductor wafer via a reinforcing plate, the reinforcing plate having holes and the semiconductor wafer bearing semiconductor devices; grinding a back surface of the semiconductor wafer; and detaching the reinforcing plate from the semiconductor wafer by injecting a solvent for dissolving an adhesive layer into the holes and by allowing the solvent to permeate through the adhesive layer. The method enables the reinforcing plate to be quickly detached from the semiconductor wafer without causing defects, such as bending and cracking, in the semiconductor wafer after the reinforcing plate is used to grind the semiconductor wafer.

Abstract: A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 &mgr;m, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 &mgr;m is determined to be selected.

Abstract: A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

Abstract: A tunable multimode wavelength division multiplex Raman pump and amplifier, and a system, method, and computer program product for controlling a tunable Raman pump and amplifier. The tunability of the pump source is accomplished by either straining or heating an external fiber grating, thereby causing a different wavelength of light to be emitted by the pump source. The system includes a microprocessor-based controller that monitors an amplifier's performance and adjusts the drive current and/or wavelength of the tunable pumps of an amplifier to achieve a target performance.

Abstract: A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

Abstract: A semiconductor device has multiple through electrodes with the same cross-sectional area extending through a semiconductor chip linking its front to back surface. The number of electrodes used is determined in accordance with the magnitude of the electric current for the same signal. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are readily capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.

Abstract: A semiconductor device has multiple power-supply through electrodes, grounding through electrodes, and signal-routing through electrodes made through a semiconductor chip. The power-supply through electrodes, the grounding through electrodes, and the signal-routing through electrodes differ mutually in cross-sectional area. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.

Abstract: In a chip-stack semiconductor device including multiple semiconductor chips vertically stacked on top of each other, each of the semiconductor chips includes multiple through electrodes connected to each other in regions inside of electrode pads derived from a device region, and each of the through electrodes links a front surface to a back surface of the semiconductor chip. This arrangement provides a chip-stack semiconductor device which can prevent the increase in the size of the device and resolve the difficulty of stacking multiple semiconductor chips on top of each other, both of which are the problems associated with the provision of a number of through electrodes.

Abstract: A semiconductor laser module is packaged on a mounting substrate through a thermal diffusion sheet member. The thermal diffusion sheet member is that having thermal conductivity where thermal conductivity in the surface direction is greater than that in the thickness direction. Specifically, the thermal diffusion sheet member is graphite, for example, and has a thermal conductivity of 300 W/m·K or greater in the surface direction.

Abstract: A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.

Abstract: A bottom plate (4a) of a box-shaped package (4) is made of a metal. Portions of the package (4) (peripheral wall (4b) and cover plate (4c)) other than the bottom plate (4a) are made of a resin or a ceramic that is more economical than the metal. The material cost of the package (4) can thus be reduced in comparison with the case where the package (4) is made of the metal as a whole. A Peltier module (5) is fixed to the bottom plate (4a). A base (6) is fixed over the Peltier module (5), and a semiconductor laser chip (2) is disposed on this base (6). Heat from the semiconductor laser chip (2) and from the Peltier module (5) can be efficiently radiated through the bottom plate (4a) made of the metal, and deterioration of heat radiation performance can be prevented.

Abstract: A tunable multimode wavelength division multiplex Raman pump and amplifier, and a system, method, and computer program product for controlling a tunable Raman pump and amplifier. The tunability of the pump source is accomplished by either straining or heating an external fiber grating, thereby causing a different wavelength of light to be emitted by the pump source. The system includes a microprocessor-based controller that monitors an amplifier's performance and adjusts the drive current and/or wavelength of the tunable pumps of an amplifier to achieve a target performance.

Abstract: In a semiconductor pumping light source module according to the present invention, a fiber grating (FBG) is disposed, outside a ferrule, in an optical fiber that is inside a protective tube to define a cavity between the FBG and the semiconductor laser device. The FBG is disposed, outside the ferrule, in the optical fiber that is inside the protective tube inside a protective boot. The FBG is disposed on the optical fiber at a portion where no adhesive exists inside the protective tube. The semiconductor pumping light source module is used as a pumping light source of the optical amplifier. The semiconductor pumping light source is also used as the pumping light source of a Raman amplifier.

Abstract: A semiconductor laser module has a Fabry-Perot type semiconductor laser device, an optical fiber, and first and second lenses. The tip of the optical fiber, on which the laser beam falls, is askew polished. The optical fiber is fixed in such a manner that the axis of the optical fiber makes an angle with respect to an optical axis of the laser beam. Coatings that avoid reflection are formed on the tip of the optical fiber, and on the first and second lenses.

Abstract: In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.