Abstract: An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

Abstract: A workpiece object is prepared which has a thin film on the surface and made of amorphous material. A pulse laser beam is applied to the thin film, the pulse laser beam having an elongated beam cross section along one direction on the surface of the thin film. With this pulse laser beam, the thin film is melted and thereafter the thin film is solidified to form crystal grains framing chains along a long axis direction of a beam incidence region in first stripe regions. The first stripe regions extend along the long axis direction in regions of the beam incidence region between its center line and borders of the beam incidence region extending along the long axis direction, and are spaced apart from the borders and the center line by a predetermined distance.

Abstract: A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.

Abstract: An image processing apparatus includes a data supply node to receive line data scanned in a main scan direction of an image, an image enlargement unit coupled to the data supply node to apply to the line data an enlargement process for enlarging the image by an enlargement factor equal to an integer so as to produce enlarged data at an output node, and an image reduction unit coupled to the output node of the image enlargement unit to apply to the enlarged data a reduction process for reducing the enlarged image by a desired reduction factor so as to produce reduced data at an output node.

Abstract: An image processing apparatus includes a data supply node to receive line data scanned in a main scan direction of an image, an image enlargement unit coupled to the data supply node to apply to the line data an enlargement process for enlarging the image by an enlargement factor equal to an integer so as to produce enlarged data at an output node, and an image reduction unit coupled to the output node of the image enlargement unit to apply to the enlarged data a reduction process for reducing the enlarged image by a desired reduction factor so as to produce reduced data at an output node.

Abstract: The purpose of the present invention is to provide a diabody-type bispecific antibody, which is characterized by having low immunogenicity and high infiltrating activity into tumor tissues, and by being easily mass-produced at a low cost with use of microorganisms, and by being easily altered in function by means of genetic engineering. The diabody-type bispecific antibody shows a more remarkable effect than the conventional diabody-type bispecific antibodies and chemically synthesized bispecific antibodies even in a very low concentration and in the absence of the super antigen.

Abstract: A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.

Abstract: An image processing apparatus is provided for enhancing the image processing function without having to increase the circuit scale. The image processing apparatus includes an image divider, a pixel processor, and an image coupler. If the number of horizontal pixels on the width of an input image is larger than a size of a line buffer, the image divider equally divides the input image in the vertical direction so that the resulting divided area is smaller than the number of horizontal pixels on the width of the line buffer. Then, the image divider controls an input data transfer circuit so that the pixel data of the input image may be sequentially transferred to the line buffer for each of the equally divided areas. The image processor sequentially processes the pixel data of the input image temporarily stored in the line buffer and then sends out the output pixel data.

Abstract: A workpiece object is prepared which has a thin film on the surface and made of amorphous material. A pulse laser beam is applied to the thin film, the pulse laser beam having an elongated beam cross section along one direction on the surface of the thin film. With this pulse laser beam, the thin film is melted and thereafter the thin film is solidified to form crystal grains framing chains along a long axis direction of a beam incidence region in first stripe regions. The first stripe regions extend along the long axis direction in regions of the beam incidence region between its center line and borders of the beam incidence region extending along the long axis direction, and are spaced apart from the borders and the center line by a predetermined distance.

Abstract: A manufacturing method of a semiconductor thin film, comprising preparing a substrate, forming a semiconductor thin film on the substrate; and irradiating laser beam to the semiconductor thin film, wherein the semiconductor thin film is formed at a thickness so that an absorption rate to the laser beam is equal to or higher than 80% of a peak value, by using light interference that occurs in the interior of the semiconductor thin film, and the semiconductor thin film is crystallized or re-crystallized by irradiating the laser beam, is provided.

Abstract: A method for producing a wave absorber, which method includes rubbing a mixture of a solidifiable fluid binder and a particulate dielectric loss material on a substrate and solidifying the binder, thereby to laminate a wave absorptive layer on the substrate, and a wave absorber produced by this production method are provided. According to the production method of the present invention, a structure including a dielectric loss material and a binder admixed most preferably for wave absorption can be formed easily into a long sheet or a long belt-like wave absorber.

Abstract: A wave absorber comprising first foamed particles comprising foamed particles of a thermoplastic organic polymer and a conductive layer formed on the surface thereof, and second foamed particles comprising foamed particles of a thermoplastic organic polymer, the first foamed particles and the second foamed particles being melt-adhered to each other, and a method for producing same. The wave absorber of the present invention is superior in a long-term shape retention, and shows superior wave absorption performance, thereby rendering itself suitable for use in an anechoic chamber.

Abstract: A method for producing a human lymphocyte producing an antibody specific to a desired antigen, a method for producing a monoclonal antibody, as well as monoclonal antibodies produced by the method, are described. The present invention provides a method for producing a human lymphocyte producing an antibody comprising, in the order mentioned, the steps of: transplanting human lymphocytes into an immunodeficient animal so that the human lymphocytes take in the animal body; immunizing the animal with a desired antigen so as to generate human lymphocytes producing an antibody specific to the antigen; and recovering the human lymphocytes producing the antibody from the animal.

Abstract: A wave absorber comprising a sintered ferrite tile wave absorber as a base substrate lowermost relative to the incident wave, and one or more laminates comprising two layers as one set, with a dielectric layer as a lower layer and a dielectric loss-causing layer as an upper layer, laminated on the base substrate. The wave absorber of the present invention is thin, but is capable of absorbing waves over wide frequency bands of from tens of megahertz to a dozen or so gigahertz. By making the absorber thin, the absorber weighs less and is easy to handle, which in turn leads to fine workability and low construction cost.

Abstract: A method for isolating a human lymphocyte producing an antibody specific to a desired antigen, a method for isolating a monoclonal antibody, as well as monoclonal antibodies produced by the method, are described. The present invention provides a method for isolating a human lymphocyte producing an antibody comprising, in the order mentioned, the steps of: transplanting human lymphocytes into an immunodeficient animal so that the human lymphocytes take in the animal body; immunizing the animal with a desired antigen so as to generate human lymphocytes producing an antibody specific to the antigen; recovering lymphocytes producing antibody by incubating with anti-mouse antibody; and separating human lymphocytes from mouse by centrifugation.

Abstract: A zinc sulfide thin film containing oxygen or oxygen and nitrogen has a high refractive index, a high transmittance, and a high Kerr rotation angle enhancing performance. The zinc sulfide thin film is manufactured by sputtering a zinc sulfide sintered product containing oxygen in an argon gas atmosphere or a gas mixture atmosphere of argon gas and nitrogen gas.

Abstract: A low molecular weight organic liquid leakage detection system comprising plural sensors capable of showing an electrical resistance variation upon contact with a low molecular weight organic liquid, said sensors being installed at every possible leakage site, being electrically connected in series, and being electrically further connected to an electric resistance detector. The detection system of the present invention is advantageous in that it permits precise and efficient detection of low molecular weight organic liquid leakage, with no need to provide a long sensor over the entire detection area.

Abstract: In the first laser beam radiation, a laser beam having a predetermined energy density is scanned on each of predetermined unit irradiated regions at a scanning pitch smaller than the beam size, and in the second laser beam radiation, a laser beam having an energy density lower than that of the laser beam of the first radiation is scanned at a scanning pitch smaller than the beam size on each of unit irradiated regions different from those of the first laser beam radiation.

Abstract: A wideband wave absorber of the present invention comprising a sintered magnetic tile and a mat fiber assembly comprising ferrite powder adhered directly or indirectly to the fibers therein, said magnetic powder being adhered to the mat fiber assembly by the step of (a) coating a paint composed of the magnetic powder and a latex, (b) thermally spraying the magnetic powder over the mat fiber assembly, or (c) dusting the magnetic powder on the fibers in the assembly having an adhesive layer formed on their surfaces and covering said powder with an adhesive layer, wherein said mat fiber assembly desirably has a density transition effectuated from the top surface to the inside with increasing density, or has a constant density in its entirety and comprises increasing amounts of adhered magnetic powder from the top surface toward the rear side. According to the present invention, a wave absorber can be made very thin and capable of absorbing waves over a wide range of frequencies.

Abstract: A low molecular weight organic liquid detection sensor which is a wire body formed by coating a core material with a conductive layer made of a substantially non-crosslinked material having a Shore A hardness not more than 70 which is mainly composed of thermoplastic elastomer and conductive carbon, the conductive layer varying in its electric resistance upon contact with a low molecular weight organic liquid. The sensor of the invention permits secured mechanical strength, its easy installation in a narrow conduit or over a wide area, and highly sensitive sensing of a low molecular weight organic liquid in the longitudinal direction.