Abstract: A laser beam display device includes: a dimming setting input unit into which any one of the dimming values of plural dimming steps are input; a first dimming processing unit having plural dimming LUTs that store dimming amounts regarding the respective dimming steps with the corresponding gradation levels as indexes; a second dimming processing unit having one gain LUT that holds gains regarding the respective dimming steps and a multiplier that creates the indexes for the respective diming LUTs by multiplying a video signal by the gains; and a light source drive unit that drives a laser diode on the basis of reference results obtained by referring to the dimming LUTs of the first dimming processing unit. The luminance of the emission beam of the laser diode, which corresponds to the video signal, is dimmed in accordance with a dimming setting input from the dimming setting input unit.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: Provided are a gas decomposition component, a method for producing a gas decomposition component, and a power generation apparatus. A gas decomposition component 10 includes a cylindrical-body MEA 7 including a first electrode 2 disposed on an inner-surface side, a second electrode 5 disposed on an outer-surface side, and a solid electrolyte 1 sandwiched between the first electrode and the second electrode; and a porous metal body 11s inserted on the inner-surface side of the cylindrical-body MEA and electrically connected to the first electrode, wherein the gas decomposition component further includes a porous conductive-paste-coated layer 11g formed on an inner circumferential surface of the first electrode, and a metal mesh sheet 11a disposed on an inner circumferential side of the conductive-paste-coated layer, and an electrical connection between the first electrode and the porous metal body is established through the conductive-paste-coated layer and the metal mesh sheet.

Abstract: Provided are a gas decomposition component, a power generation apparatus including the gas decomposition component, and a method for decomposing a gas. A gas decomposition component includes a cylindrical MEA including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure; a first gas channel through which a first gas that is decomposed flows, the first gas channel being disposed inside the cylindrical MEA; and a second gas channel through which a second gas flows, the second gas channel being disposed outside the cylindrical MEA, wherein the gas decomposition component further includes a heater for heating the entirety of the component; and a preheating pipe through which the first gas to be introduced into the first gas channel passes beforehand to be preheated.

Abstract: A gas decomposition component includes a cylindrical membrane electrode assembly (MEA) including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure, wherein an end portion of the cylindrical MEA is sealed, a gas guide pipe is inserted through another end portion of the cylindrical MEA into an inner space of the cylindrical MEA to form a cylindrical channel between the gas guide pipe and an inner circumferential surface of the cylindrical MEA, and a gas flowing through the gas guide pipe toward the sealed portion is made to flow out of the gas guide pipe in a region near the sealed portion so that a flow direction of the gas is reversed and the gas flows through the cylindrical channel in a direction opposite to the flow direction in the guide pipe.

Abstract: The present invention provides a tool post of a machine tool capable of enhancing the accuracy of positioning a tool. A positioning key 20 is fixed to an attached surface 10c formed on a tool holder 10, and a positioning block 21 fitting to the positioning key 20 is fixed to a holder attaching surface 11c formed on an outer peripheral surface 11a of a turret 11, in which the positioning key 20 is elastically deformed when it is fitted to the positioning block 21, and thereby brought into close contact with the positioning block 21.

Abstract: Provided are a catalyst, an electrode, a fuel cell, a gas detoxification apparatus, and the like that can promote a general electrochemical reaction causing gas decomposition or the like. A catalyst according to the present invention is used for promoting an electrochemical reaction and is chain particles 3 formed of an alloy particles containing nickel (Ni) and at least one selected from the group consisting of iron (Fe), cobalt (Co), chromium (Cr), tungsten (W), and copper (Cu).

Abstract: Provided is a gas decomposition component that employs an electrochemical reaction and can have high treatment performance, in particular, an ammonia decomposition component. The gas decomposition component includes a MEA 7 including a solid electrolyte 1 and an anode 2 and a cathode 5 that are disposed so as to sandwich the solid electrolyte; Celmets 11s electrically connected to the anode 2; a heater 41 that heats the MEA; and an inlet 17 through which a gaseous fluid containing a gas is introduced into the MEA, an outlet 19 through which the gaseous fluid having passed through the MEA is discharged, and a passage P extending between the inlet and the outlet, wherein the Celmets 11s are discontinuously disposed along the passage P and, with respect to a middle position 15 of the passage, the length of the Celmets disposed is larger on the side of the outlet than on the side of the inlet.

Abstract: Provided is a gas decomposition component that employs an electrochemical reaction to reduce the running cost and can have high treatment performance. A gas decomposition component includes a cylindrical-body MEA 7 including an anode 2 on an inner-surface side, a cathode 5 on an outer-surface side, and a solid electrolyte 1; and a porous metal body 11s that is inserted on the inner-surface side of the cylindrical-body MEA and is electrically connected to the anode 2, wherein a metal mesh sheet 11a is disposed between the anode 2 and the porous metal body 11s. Another gas decomposition component includes the cylindrical MEA 7 and silver-paste-coated wiring 12g formed on the cathode 5, wherein the silver-paste-coated wiring 12g is a porous body.

Abstract: Provided are a gas decomposition component in which an electrochemical reaction is used to reduce the running cost and high treatment performance can be achieved; and a method for producing the gas decomposition component. The gas decomposition component includes a cylindrical MEA 7 including an anode 2 on an inner-surface side, a cathode 5 on an outer-surface side, and a solid electrolyte 1 sandwiched between the anode and the cathode; a porous metal body 11s that is inserted on the inner-surface side of the cylindrical MEA and is in contact with the first electrode; and a central conductive rod 11k inserted so as to serve as an electrically conductive shaft of the porous metal body 11s.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: A workpiece centering apparatus 1 is provided on a lathe having a spindle 33, an independent chuck 34, and upper and lower tool rests 37, 41, and has sandwiching members 11, 12 mounted to the tool rests 37, 41, respectively, and capable of contacting the outer peripheral surface of a workpiece W, and a centering control section 15 for moving the tool rests 37, 41 and thereby moving the sandwiching members 11, 12 to their respective centering positions which are the positions of the sandwiching members 11, 12 when the center position of a portion to be machined of the workpiece W coincides with the axis of the spindle 33 in a state where the portion to be machined of the workpiece W is being sandwiched and held by the sandwiching members 11, 12, and then causing the independent chuck 34 to grip the workpiece W.

Abstract: Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

Abstract: A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: A technique capable of suppressing or preventing generation of flickers (blinks) by a sustain period control as well as capable of ensuring or enhancing display quality in a PDP device. The PDP device adjusts a sustain pulse of the sustain period for every subfield by selecting a combination of one or more than one cycle so that start and end timings of a field in fields before and after change are almost the same according to a display load ratio of the subfield of the field. Field weighted emission center positions then becomes almost the same, and flickers and the like are suppressed.

Abstract: A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N2 and NH3 into active nitrogen at 900° C. is supplied. In addition, in the step of interrupting epitaxial growth, the gas different from a gas used as an N source of the well layer is supplied.

Abstract: [Object] To provide an electrochemical reactor that is small in size but high in throughput capacity, does not generate NOx or carbon dioxide, can be operated at a low running cost, is easy to handle during assembling, and has a simple structure and high durability, a method for manufacturing the reactor, a gas decomposing element, an ammonia decomposing element, and a power generator. [Solution] An electrochemical reactor 10 includes a porous anode 2, a porous cathode 5 that is paired with the anode, and an ion conductive material 1 having an ion conductivity and being interposed between the anode and the cathode. The anode 2 includes surface-oxidized metal particle chains 21.