Abstract: A valve device forming a ventilation flow channel of a fuel tank includes a float valve; an inside case including a valve opening relative to the float valve at an upper portion, and housing the float valve; an outside case receiving the inside case from an upper open end, and provided with a bottom portion; and an attachment portion relative to a tank side. A flow channel which becomes one portion of the ventilation flow channel is formed between a side portion of the inside case and a side portion of the outside case, and a through hole is provided in the side portion of the inside case. Furthermore, an engagement claw relative to the outside case is provided directly above the through hole.

Abstract: A fuel tank check valve, which can prevent one portion of a coil portion of a torsion coil spring from being stuck on a stepped portion of a pivot includes a cylindrical member defining a flow channel for a fuel fluid; a flap axially supported on the cylindrical member through a pivot; and a torsion coil spring urging the flap in a closing direction. The pivot includes a large diameter portion around which a coil portion of the torsion coil spring is wound; and a first small diameter portion and a second small diameter portion coaxial with each other, and projecting into a shaft hole provided in either one of the cylindrical member or the flap. The first small diameter portion adjacent to the large diameter portion is off-centered to a side where the torsion coil spring presses against the pivot relative to the large diameter portion.

Abstract: A valve device includes a float body and a valve body provided in an upper portion of the float body to obliquely move. The valve body includes a seal portion that closes a valve opening formed in a case when the float rises, an engaging portion serving as a linkage portion with respect to the float body, and an abutting portion that abuts on a vicinity of the valve opening when inclining obliquely. An area of the abutting portion in the horizontal direction is made smaller than that of the seal portion such that the abutting portion laterally protrudes from the seal portion.

Abstract: A valve device forming a portion of a ventilation flow channel of a fuel tank includes a float valve, a case housing the float valve, and an outside member housing the case and including an attachment portion to a fuel tank side. One portion of a cylindrical seal member fitted in a first through hole to communicate an inner portion to a second through hole is pinched between a top portion of the case wherein the first through hole is formed, and a top portion of the outside member wherein the second through hole communicating to an outside of the tank is formed, and a lower end of the cylindrical seal member becomes a valve seat of the float valve.

Abstract: A valve device includes a float constituting a lower valve body and a case accommodating the float, and constitutes a part of an airflow passage of a fuel tank. The valve device includes a top portion of the case formed with a first penetration hole, a cylindrical seal body with a part that is fit in the first penetration hole and is sandwiched between the top portion and a sandwich member having a second penetration hole and combined with the top portion from above the top portion, an inside of the seal body communicating with the second penetration hole of the sandwich member, and an upper valve body above the sandwich member and configured to open and close the second penetration hole.

Abstract: A valve device forming a ventilation flow channel of a fuel tank includes a float valve; an inside case including a valve opening relative to the float valve at an upper portion, and housing the float valve; an outside case receiving the inside case from an upper open end, and provided with a bottom portion; and an attachment portion relative to a tank side. A flow channel which becomes one portion of the ventilation flow channel is formed between a side portion of the inside case and a side portion of the outside case, and a through hole is provided in the side portion of the inside case. Furthermore, an engagement claw relative to the outside case is provided directly above the through hole.

Abstract: A fuel tank check valve, which can prevent one portion of a coil portion of a torsion coil spring from being stuck on a stepped portion of a pivot includes a cylindrical member defining a flow channel for a fuel fluid; a flap axially supported on the cylindrical member through a pivot; and a torsion coil spring urging the flap in a closing direction. The pivot includes a large diameter portion around which a coil portion of the torsion coil spring is wound; and a first small diameter portion and a second small diameter portion coaxial with each other, and projecting into a shaft hole provided in either one of the cylindrical member or the flap. The first small diameter portion adjacent to the large diameter portion is off-centered to a side where the torsion coil spring presses against the pivot relative to the large diameter portion.

Abstract: A valve device includes a float body and a valve body provided in an upper portion of the float body to obliquely move. The valve body includes a seal portion that closes a valve opening formed in a case when the float rises, an engaging portion serving as a linkage portion with respect to the float body, and an abutting portion that abuts on a vicinity of the valve opening when inclining obliquely. An area of the abutting portion in the horizontal direction is made smaller than that of the seal portion such that the abutting portion laterally protrudes from the seal portion.

Abstract: A valve device includes a float constituting a lower valve body and a case accommodating the float, and constitutes a part of an airflow passage of a fuel tank. The valve device includes a top portion of the case formed with a first penetration hole, a cylindrical seal body with a part that is fit in the first penetration hole and is sandwiched between the top portion and a sandwich member having a second penetration hole and combined with the top portion from above the top portion, an inside of the seal body communicating with the second penetration hole of the sandwich member, and an upper valve body above the sandwich member and configured to open and close the second penetration hole.

Abstract: A valve device forming a portion of a ventilation flow channel of a fuel tank includes a float valve, a case housing the float valve, and an outside member housing the case and including an attachment portion to a fuel tank side. One portion of a cylindrical seal member fitted in a first through hole o communicate an inner portion to a second through hole is pinched between a top portion of the case wherein the first through hole is formed, and a top portion of the outside member wherein the second through hole communicating to an outside of the tank is formed, and a lower end of the cylindrical seal member becomes a valve seat of the float valve.

Abstract: A valve device for a fuel tank includes a float element accommodated vertically movably in a case. The float element has a seal member at an upper portion thereof. The fuel flowing into the case through the inflow portion rises the float element to seat the seal member on the vent valve port. A ventilation portion connecting between inside of the tank and inside of the case is formed at an upper face portion of the case positioned above a waterline of the float element when seated. The upper face portion of the float element positioned in close proximity to the upper face portion reduces the amount of ventilation through the ventilation portion when seated. The valve device for a fuel tank further includes a regulation portion at the upper face portion of the case in which the interval is constant between the upper face portion of the case and the upper face portion of the float element when seated.

Abstract: A valve device for a fuel tank includes a float element accommodated vertically movably in a case. The float element has a seal member at an upper portion thereof. The fuel flowing into the case through the inflow portion rises the float element to seat the seal member on the vent valve port. A ventilation portion connecting between inside of the tank and inside of the case is formed at an upper face portion of the case positioned above a waterline of the float element when seated. The upper face portion of the float element positioned in close proximity to the upper face portion reduces the amount of ventilation through the ventilation portion when seated. The valve device for a fuel tank further includes a regulation portion at the upper face portion of the case in which the interval is constant between the upper face portion of the case and the upper face portion of the float element when seated.

Abstract: A forklift has a travelling carriage, a straddle arm disposed on the travelling carriage, a mast disposed on the straddle arm to be reciprocally movable in a horizontal direction, a fork disposed on the mast to be movable up and down, and a cover disposed on the travelling carriage. When the mast is in a reach-in operation, the cover covers at least an upper side of an article supported by the fork.

Abstract: A forklift has a travelling carriage, a straddle arm disposed on the travelling carriage, a mast disposed on the straddle arm to be reciprocally movable in a horizontal direction, a fork disposed on the mast to be movable up and downm, and a cover disposed on the travelling carriage. When the mast is in a reach-in operation, the cover covers at least an upper side of an article supported by the fork.

Abstract: An LSI semiconductor device having a device isolation structure and a method of fabricating the isolation structure are presented. The device is a buried-type field-shielding device which is fabricated in non-active regions of the LSI circuit, and includes field-shield insulator film formed on the interior walls of trench cavities formed on the substrate and the field-shield electrodes buried within the trench cavity. Unlike the conventional buried-type isolation devices, the top surface of present isolation structure is level with the upper surface of the substrate. Therefore, this device structure utilizes the interior space of the substrate rather than the surface area of the substrate as in the conventional field-shield isolation structure.

Abstract: It is an object to integrate storing functions at a high density and make it possible to perform a stable operation even at a low power supply voltage. A MOS transistor including a gate electrode and an n-type impurity region serving as a source-drain has a memory capacitor comprised by a dielectric film, a conductor, and an n-type impurity region opposing to the conductor through the dielectric film in a first trench formed in a p-type epitaxial layer beneath the gate electrode. With this structure, an area occupied by the MOS transistor and the memory capacitor can be minimized. Each unit memory cell is a two-transistor memory cell in which the drain and source of a MOS transistor supply a pair of complementary signals to a detection circuit. For this reason, a storing operation can be made reliable, and a stable operation can be realized, especially, at a low voltage.

Abstract: A semiconductor integrated circuit has P-channel active MOSFETs and N-channel active MOSFETs formed in a semiconductor substrate. In order to electrically isolate the active MOSFETs, the semiconductor integrated circuit has P-channel field shield MOS devices and N-channel field shield MOS devices. The P-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of the P-channel active MOSFETs. The N-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of N-channel active MOSFETs. A P-channel field shield voltage, which is higher than a power supply voltage of the semiconductor integrated circuit, is supplied to the field shield electrodes of the P-channel field shield MOS device to turn the P-channel field shield MOS devices to an OFF-state to electrically isolate the P-channel active MOSFETs.

Abstract: Dielectric isolation in the bit-line direction is performed by a first trench filled with an insulator, dielectric isolation in the word-line direction is performed by a second trench filled with a conductive film serving as a field-shield electrode interposing an insulating film, and capacitors are formed on side walls of the second trench by the conductive film and a semiconductor substrate with the insulating film interposed therebetween. A high-density, large-scale DRAM is realized by combining the technologies of field-shield element isolation, trench element isolation, and side-wall capacitors in a trench. In this DRAM, the conductive film in a trench-capacitor structure serves as a field-shield electrode in a field-shield structure for dielectric isolation between memory cells. Since the capacitor forms a capacitance inside the semiconductor substrate on one side wall of the trench, high-density integration is possible.

Abstract: There is provided a semiconductor memory integrated circuit which is formed through high-density integration of memory cells and sense circuits and which is capable of ensuring stable operations even in conjunction with a further reduction in voltage and a further increase in the operating speed of the circuit. Two-transistor memory cells, each of which includes a pair of access transistors and a memory capacitor, are arranged in a matrix pattern. A bit line is shared between adjacent columns of memory cells, and a sense circuit is also shared between adjacent columns of memory cells. The sense circuit includes a first sense circuit formed from n-channel MOS transistors, and a second sense circuit formed from p-channel MOS transistors. After a potential difference between signals of the pair of bit lines is amplified to a certain extent by means of the first sense circuit, the second sense circuit is activated to amplify the signal potential difference to a much greater extent.

Abstract: An LSI semiconductor device having a device isolation structure and a method of fabricating the isolation structure are presented. The device is a buried-type field-shielding device which is fabricated in non-active regions of the LSI circuit, and includes field-shield insulator film formed on the interior walls of trench cavities formed on the substrate and the field-shield electrodes buried within the trench cavity. Unlike the conventional buried-type isolation devices, the top surface of present isolation structure is level with the upper surface of the substrate. Therefore, this device structure utilizes the interior space of the substrate rather than the surface area of the substrate as in the conventional field-shield isolation structure.