Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A vacuum processing method comprises placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers admitted into the reaction container from the high-frequency electrode so as to process the article to be processed. In the method, at least the high-frequency power having a frequency f1 and the high-frequency power having a frequency f2 are used and satisfy the following two conditions as the high-frequency powers: 250 MHz≧f1>f2≧10 MHz 0.9≧f2/f1≧0.1.

Abstract: A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

Abstract: To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high frequency power (with a frequency f1 and a power P1) and a second high frequency power (with a frequency f2 and a power P2) supplied to an electrode from a first high frequency power supply and a second high frequency power supply, respectively, are set so that the frequencies are equal to or higher than 10 MHz and equal to or lower than 250 MHz, a ratio of the frequency f2 to the frequency f1 (f2/f1) is equal to or higher than 0.1 and equal to or lower than 0.9, and a ratio of the power P2 to a total power (P1+P2) is equal to or higher than 0.1 and equal to or lower than 0.9. The frequency f2 is changed during processing the substrate.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.

Abstract: In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.

Abstract: A vacuum processing method comprises placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers admitted into the reaction container from the high-frequency electrode so as to process the article to be processed. In the method, at least the high-frequency power having a frequency f1 and the high-frequency power having a frequency f2 are used and satisfy the following two conditions as the high-frequency powers.

Abstract: For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A film-forming apparatus is provided which comprises a reaction chamber capable of being vacuumed and having a reaction space in which a plurality of substrates can be arranged on a common circumference to establish an inner space circumscribed by the plurality of substrates. A film-forming raw material gas can be introduced into the inner space. A first electrode for supplying a high frequency power into the inner space is provided at a central position in the inner space circumscribed by the plurality of substrates. A second electrode is provided outside the plurality of substrates arranged on the common circumference. A shielding member having a dielectric portion constituted by a dielectric material is provided between the second electrode and the plurality of substrates arranged on the common circumference.

Abstract: A method for manufacturing an electrophotographic photosensitive member in which an aluminum substrate is fitted on a substrate holder and a functional film comprising a non-monocrystalline material containing silicon atoms as the matrix is formed by low pressure chemical deposition on the surface of the substrate, which comprises surface of the substrate is cleaned with water in which carbon dioxide is dissolved, the substrate holder comprises a metal as the matrix and has formed ceramics at least on the inner surface. This method and a jig used therein make it possible to prevent fine image defects, thereby improving electrophotography characteristics, and to economically and stably manufacture electrophotographic photosensitive members which provide high quality images free from defects and unevenness.

Abstract: In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation:

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened.

Abstract: For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A film-forming apparatus is provided which comprises a reaction chamber capable of being vacuumed and having a reaction space in which a plurality of substrates can be arranged on a common circumference to establish an inner space circumscribed by the plurality of substrates. A film-forming raw material gas can be introduced into the inner space. A first electrode for supplying a high frequency power into the inner space is provided at a central position in the inner space circumscribed by the plurality of substrates. A second electrode is provided outside the plurality of substrates arranged on the common circumference. A shielding member having a dielectric portion constituted by a dielectric material is provided between the second electrode and the plurality of substrates arranged on the common circumference.

Abstract: A cleaning method for an electrophotographic photosensitive member that eliminate corrosion and cleaning irregularities of a substrate during cleaning, and a method of producing an electrophotographic photosensitive member which is easy to operate and capable of stably forming the photosensitive member at a low cost, in a high yield, and at a high speed. The cleaning method is a water-based cleaning method of cleaning a cylindrical substrate for an electrophotographic photosensitive member, using at least one selected from the group consisting of pure water, pure water having dissolved carbon dioxide, and pure water containing a surface active agent, wherein the cylindrical substrate is cleaned by a cleaning liquid ejected from a plurality of nozzles, and wherein those surfaces of the cleaning liquid ejected from the respective nozzles which are in contact with a surface of the cylindrical substrate do not interfere with each other, and the cleaning apparatus is arranged to carry out the cleaning method.