Abstract: A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

Abstract: An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method capable of effectively preventing film peeling generated in a reaction vessel to provide a deposited film of excellent quality with reduced spherical projections. The present invention provides a vacuum processing apparatus or method utilizing a vessel, means for supplying a gas into the vessel and means for supplying an electric power and in which the gas is decomposed by the electric power to generate a discharge, wherein the surface of a member confronted with the discharge satisfies the conditions of (1) the ten-point mean roughness Rz with respect to a reference length of 2.5 mm according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 200 &mgr;m, and (2) the mean spacing S of adjacent local peaks according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 100 &mgr;m.

Abstract: A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.

Abstract: For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.

Abstract: In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited films on inner walls and structural component parts of the reactor as far as possible so that the spherical protuberances can be prevented from occurring and electrophotographic photosensitive members having a superior quality can be formed.

Abstract: A light receiving member having a light receiving layer comprising a photoconductive layer and a surface layer disposed on a conductive substrate, wherein the photoconductive layer comprises, from the side of the substrate, a first photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, carbon atoms, hydrogen atoms and fluorine atoms, and a second photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from hydrogen atoms and fluorine atoms, wherein the content of said fluorine atoms in the first photoconductive layer is from 1 to 95 atomic ppm based on the content of said silicon atoms.

Abstract: An electrophotographic light-receiving member comprises a conductive substrate and a light-receiving layer having a photoconductive layer and a surface layer which are successively layered on the conductive substrate, wherein;the photoconductive layer is comprised of a non-monocrystalline material mainly composed of a silicon atom and containing at least a carbon atom, a hydrogen atom and a fluorine atom;the surface layer is mainly composed of a silicon atom and contains a carbon atom, a hydrogen atom and a halogen atom;the carbon atom in the photoconductive layer is in a non-uniform content in the layer thickness direction and in a higher content on the side of the conductive substrate and in a lower content on the side of the surface layer at every point in the layer thickness direction, and is in a content of from 0.

Abstract: A microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a plurality of Substrates which includes a substantially enclosed film-forming chamber comprising an outer wall having an end portion thereof provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, The film-forming chamber has a cylindrical discharge space encircled by a plurality of rotatable cylindrical substrate holders. Each of the cylindrical substrate holders has a substrate thereon. The cylindrical substrate holders are concentrically arranged in the film-forming chamber. The film forming chamber is provided with means for evacuating the film-forming chamber and means for supplying a raw material gas into the discharge space. The means for supplying the raw material gas comprises one or more gas feed pipes provided with a plurality of gas liberation holes capable of supplying a raw material gas radiately against each of the substrates.

Abstract: There is provided a microwave plasma chemical vapor deposition process for forming a functional deposited film on a surface of a substrate by means of microwave plasma chemical vapor deposition conducted in a substantially enclosed film-forming chamber, said film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a substantially cylindrical discharge space encircled by said substrate surface, said substrate being supported by substrate working means, said film-forming chamber being provided with means for evacuating said film-forming chamber, comprising: (a) longitudinally providing a gas feed pipe provided with a plurality of gas liberation holes at the center position of said discharge space; (b) radiately supplying against said surface of substrate a raw material gas through said plurality of gas liberation holes o

Abstract: A microwave plasma CVD apparatus for the formation of a functional deposited film includes a gas supply pipe to which a bias voltage is applied so as to form an electric field between the gas supply pipe and a substrate onto which the film is deposited.