Abstract: A hydrogen storing member which comprises at least two kinds of hydrogen storing materials comprising a first hydrogen storing material and a second hydrogen storing material capable of releasing or storing hydrogen in a range of at least one of temperature and pressure at which the first hydrogen storing material is in the .beta. phase having a high capacity for storing hydrogen.

Abstract: An image forming member for electrophotography constructed with a substrate and a photoconductive layer formed thereon, wherein the photoconductive layer comprising an amorphous material containing therein silicon atom as the matrix and halogen atom as the constituent atom.

Abstract: A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.

Abstract: An apparatus for relatively moving a probe facing an information carrier and recording information on and/or reproducing information from the information carrier with the probe provided with a detector for detecting an error in the probe.

Abstract: A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.

Abstract: A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a predetermined voltage at the same time, each unit element becoming active when impressed with the predetermined voltage, and a drive device for impressing the predetermined voltage to the plurality of blocks sequentially. The matrix circuit includes a first selective device for selecting either ground or a desired other than ground voltage, and a second selective device for selecting one of the output of the drive device and the output of the first selective device whereby the output of the second selective device renders active the plurality of unit elements of each block.

Abstract: A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.

Abstract: A photoelectric conversion apparatus has a plurallity of photoelectric conversion elements each providing an output signal to a storage capacitor. A matrix wiring unit is arranged opposite the photoelectric conversion elements so as not to cross the signal lines extending from the capacitors. The matrix wiring unit matrix transfers the signals from the capacitors. A switch array unit includes a first switch unit for sequentially transferring the matrix transferred signals, and a first readout device for reading out, as a voltage signal, the signals transferred by the first switch section. The switch array also includes a second switch unit arranged in correspondence with the first switch unit and operated synchronously therewith. The second switch unit receives signals corresponding to noise. A second readout device reads out, as a voltage signal, the output from the second switch unit.

Abstract: A double-gated pool hopper is disposed above a pair of single-gated weigh hoppers such that articles in the pool hopper can be selectably discharged into either of the weigh hoppers by opening and closing the corresponding one of the two gates of the pool hopper. A single stepping motor controls the selective opening and closing of the two gates of the pool hopper by rotating in one direction or the other and another single stepping motor controls the selective opening and closing of the gates of the pair of weigh hoppers by rotating in one direction or the other.

Abstract: A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: An image readout apparatus includes a plurality of photoelectric conversion elements, storage devices provided for each of the photoelectric conversion elements for storing each output signal from the photoelectric conversion elements, and discharge switches provided each in parallel with each of the storage devices. In the image readout apparatus, the photoelectric conversion elements and discharge switches are respectively divided into a predetermined number of blocks and the signal transference is performed collectively for each block, thus enabling a high-speed and reliable operation.

Abstract: An electrophotographic image forming member comprises a substrate and a photoconductive layer overlying the substrate and composed of a hydrogenated amorphous silicon containing 0.001-1000 atomic ppm of carbon as an impurity based on silicon.

Abstract: A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read.

Abstract: A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes of a fluorescent lamp to illuminate an original to be read.

Abstract: A line sensor for color reading comprises a plurality of line sensors, each having photosensors arranged one-dimensionally, for the number of the color signals to be separated arranged in parallel with each other on one and the same substrate; and a color filter for color signal separation directly disposed on the light-receiving portion of each of said line sensors. The parallel line sensors may be disposed so as to be non-coplanar, e.g., by provision of insulating layers at least on wiring sections of the first and second line sensors, the second and third line sensors being disposed on the first and second insulating layers, respectively.