Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

Abstract: A line photosensor comprising a plurality of sensor elements in at least one row on a substrate and a plurality of extract wiring electrodes extending from the respective sensor elements. The extract wiring electrodes are wired in an electrically isolated and laminated manner. The extract wiring electrodes are laminated such that they hold therebetween a laminated structure including a first insulating layer, an intermediate electrode layer formed on the first insulating layer, and a second insulating layer formed on the intermediate electrode layer.

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: An image sensor comprising at least one first light emitting element for irradiating an original with light, at least one photoconductive element for sensing the light via the original and at least one second light emitting element for irradiating the photoconductive element with light. The second light emitting element emits light of photoenergy smaller than the optical band gap of the photoconductive element.

Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

Abstract: A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: A color photosensor which includes a plurality of closely arranged sensor units. Each sensor includes a color filter provided at a position corresponding to that of a photoreceptor. The color filter comprises at least one of coloring matter layers selected from the following groups (A), (B) and (C):(A) A red coloring matter layer including, as a main component, perylenetetracarboxylic acid derivatives selected from the following structural formulas (I) and (II): ##STR1## where R.sub.1 denotes hydrogen, an alkyl group or an allyl group; (B) a green coloring matter layer including, as a main component, phthalocyanine coloring matter, a combination of phthalocyanine coloring matter and isoindolenone coloring matter, or a combination of phthalocyanine coloring matter and authraquinone coloring matter; and(C) a blue coloring matter layer including, as a main component, phthalocyanine coloring matter, or a combination of phthalocyanine coloring matter and quinacridon coloring matter.

Abstract: There is a method and an apparatus for reading an image in which the light emitted from a light source through an original is converted into an electric signal by a photoelectric converting device and is outputted as an image singal. In this method, a compensation light is radiated onto the photoelectric converting device and thereby causing a compensation signal to be generated therefrom; this compensation signal is stored into a memory; an original image is then read; and the read signal is compensated by the compensation signal stored in the memory. The compensation light corresponds to each intensity of lights which are obtained through a reference original to be read and which are received by the photoelectric converting device. By use of this method in an original reading section of a facsimile apparatus or the like, an ununiformity and a variation in signal of each bit which is read by the photoelectric converting device are compensated, so that a stable output image signal can be derived.

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A photosensor comprises a glass substrate, a photoelectric converting layer comprising a silicon-based amorphous material, and a pair of electrode layers in electrical contact with the photoelectric converting layer, wherein one or both sides of the glass substrate are covered with dielectric layers and the photoelectric converting layer is formed upon the dielectric layer.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A photosensor comprises a first layer, a second layer and a third layer laminated successively, each layer comprising amorphous silicon and the third layer having at least a pair of electrodes separated from each other at a given interval, characterized in that said second layer has p-type semiconductor characteristics, said first layer and said third layer have semiconductor characteristics of a conduction type different from that of said second layer, and at least said first layer has photoconductivity.

Abstract: A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.