Abstract: A light emitting device according to an embodiment of the present disclosure includes multiple light emitting elements. The light emitting elements each include a semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer that are stacked in this order. The first conductive layer has a light emitting surface. The light emitting elements further includes a first electrode in contact with the second conductive layer, and a second electrode in contact with the first conductive layer. The light emitting elements share the first conductive layer and the second electrode with each other. The light emitting elements each include a current path in the first conductive layer from a portion opposed to the first electrode to a portion opposed to the second electrode. The first conductive layer has one or multiple trenches in a region between two current paths adjacent to each other.

Abstract: A light emitting device of an embodiment of the present disclosure includes: a substrate having a first surface and a second surface opposed to each other; semiconductor stacks provided on the first surface of the substrate and each including a first conductivity type layer, an active layer, and a second conductivity type layer that are stacked in order from a side of the first surface, the semiconductor stacks including multiple light emitting regions configured to emit light; and a separation section provided between the multiple light emitting regions and having a top surface at a position higher than the active layer in a direction of a normal to the first surface of the substrate.

Abstract: Disclosed is a distance measurement device including a control section. The control section executes control so that an operating voltage for operating a light-receiving section is applied to the light-receiving section at a second time point. The second time point is later than a first time point by a predetermined time. The first time point is a time point at which a light-emitting section operates.

Abstract: A distance measurement apparatus including at least one measurement unit, in which the measurement unit includes: a voltage level converter that applies an arbitrary bias to a voltage obtained on the basis of an output from a light receiver to offset a level of the voltage; an amplifier that amplifies a voltage output from the voltage level converter; and a measurement section that measures a timing at which an output from the amplifier reaches a predetermined threshold.

Abstract: The display apparatus includes a plurality of light emitting device units each including: a light generating unit 11, 21, or 31; a wavelength conversion layer 12, 22, or 32 including a color conversion layer 13, 23, or 33 that includes a particulate color conversion material; and a first light emitting device 10, a second light emitting device 20, or a third light emitting device 30 including a wavelength selection layer 14, 24, or 34. The wavelength of light emitted from the third wavelength selection layer 34 is longer than the wavelength of light emitted from the second wavelength selection layer 24 and the wavelength of light emitted from the first wavelength selection layer 14. The wavelength of light emitted from the second wavelength selection layer 24 is longer than the wavelength of light emitted from the first wavelength selection layer 14.

Abstract: A light-emitting device according to one embodiment of the present disclosure includes: a reflective structure having a first surface and a second surface and having, on the first surface, an opening whose side surface is provided with a first reflective film; a semiconductor light-emitting element including a first conductivity-type layer, an active layer, and a second conductivity-type layer that are stacked, the opening of the reflective structure and the active layer being disposed to be opposed to each other; and a support member having a light-transmitting property and having a first surface and a second surface, the semiconductor light-emitting element being disposed on the first surface side, the reflective structure being disposed on the second surface side, the second surface being at least partially in contact with the first surface of the reflective structure.

Abstract: A light-emitting device of the present disclosure includes: a solid-state light source emitting excitation light; a phosphor layer having a first refractive index, provided on a light-emitting surface side of the solid-state light source, and having a first reflection film on its side surface; a low refractive layer provided on the phosphor layer and having a second refractive index less than the first refractive index; and a sealing member encapsulating the phosphor layer and the low refractive layer and having a third refractive index greater than or equal to the second refractive index.

Abstract: A correction device including a photon number counting unit that counts a photon number on the basis of an output signal output from a light receiving unit, a correction value acquiring unit that acquires a correction value corresponding to the photon number, and a correction unit that performs correction based on the correction value.

Abstract: A ranging device provided with a light projecting unit for projecting a reference pulse set row including a main pulse and at least one sub pulse, a light receiving unit for receiving a reflected pulse set row obtained by reflection of the reference pulse set row by an object to be measured, and an identifying unit for identifying the reflected pulse set row corresponding to the reference pulse set row. The ranging device is further provided with a calculating unit for calculating a distance to the object to be measured on the basis of a delay time difference between the reference pulse set row and the reflected pulse set row corresponding to the reference pulse set row. The light projecting unit projects a plurality of reference pulse set rows having different pulse intervals.

Abstract: A distance measurement apparatus includes at least one measurement unit. The measurement unit includes a first light reception section including a plurality of photon counting type light reception devices connected to each other and a first conversion section that converts a current outputted from the first light reception section into a voltage. The measurement unit further includes a first amplification section that outputs an amplification value obtained by amplifying the voltage outputted from the first conversion section and outputs, when the amplification value exceeds a given limit value, the limit value as the amplification value. The measurement unit further includes a first measurement section that measures a timing at which the output value from the first amplification section reaches a given threshold value.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: Disclosed is a distance measurement device including a control section. The control section executes control so that an operating voltage for operating a light-receiving section is applied to the light-receiving section at a second time point. The second time point is later than a first time point by a predetermined time. The first time point is a time point at which a light-emitting section operates.

Abstract: A distance measurement apparatus including at least one measurement unit, in which the measurement unit includes: a voltage level converter that applies an arbitrary bias to a voltage obtained on the basis of an output from a light receiver to offset a level of the voltage; an amplifier that amplifies a voltage output from the voltage level converter; and a measurement section that measures a timing at which an output from the amplifier reaches a predetermined threshold.

Abstract: A ranging device provided with a light projecting unit for projecting a reference pulse set row including a main pulse and at least one sub pulse, a light receiving unit for receiving a reflected pulse set row obtained by reflection of the reference pulse set row by an object to be measured, an identifying unit for identifying the reflected pulse set row corresponding to the reference pulse set row, and a calculating unit for calculating a distance to the object to be measured on the basis of a delay time difference between the reference pulse set row and the reflected pulse set row corresponding to the reference pulse set row, in which the light projecting unit is configured to project a plurality of reference pulse set rows having different pulse intervals.

Abstract: Provided is a correction device including: a photon number counting unit that counts a photon number on the basis of an output signal output from a light receiving unit; a correction value acquiring unit that acquires a correction value corresponding to the photon number; and a correction unit that performs correction based on the correction value.

Abstract: A distance measurement apparatus includes at least one measurement unit. The measurement unit includes a first light reception section including a plurality of photon counting type light reception devices connected to each other, a first conversion section configured to convert current outputted from the first light reception section into a voltage, a first amplification section configured to output an amplification value obtained by amplifying the voltage outputted from the first conversion section and output, when the amplification value exceeds a given limit value, the limit value as the amplification value, and a first measurement section configured to measure a timing at which the output value from the first amplification section reaches a given threshold value.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.